In situ spectroscopic ellipsometry during molecular‐beam epitaxy of cadmium mercury telluride

1987 ◽  
Vol 5 (5) ◽  
pp. 3139-3142 ◽  
Author(s):  
Y. Demay ◽  
D. Arnoult ◽  
J. P. Gailliard ◽  
P. Medina
Keyword(s):  
Molecular Beam Epitaxy ◽  
Spectroscopic Ellipsometry ◽  
Molecular Beam ◽  
Cadmium Mercury Telluride ◽  
Mercury Telluride

In situ spectroscopic ellipsometry in molecular beam epitaxy for photonic devices

1993 ◽  
Vol 63 (1-4) ◽  
pp. 1-8 ◽  
Author(s):  
G.N. Maracas ◽  
J.L. Edwards ◽  
D.S. Gerber ◽  
R. Droopad
Keyword(s):  
Molecular Beam Epitaxy ◽  
Spectroscopic Ellipsometry ◽  
Molecular Beam ◽  
Photonic Devices

In Situ Spectroscopic Ellipsometry for Real Time Composition Control of Hg1−xcdx Te Grown by Molecular Beam Epitaxy

1997 ◽  
Vol 487 ◽  
Author(s):  
R. Dat ◽  
F. Aqariden ◽  
W. M. Duncan ◽  
D. Chandra ◽  
H. D. Shih
Keyword(s):  
Experimental Data ◽  
Molecular Beam Epitaxy ◽  
Surface Topography ◽  
Spectroscopic Ellipsometry ◽  
Molecular Beam ◽  
Surface Defects ◽  
Spectral Ellipsometry ◽  
Composition Control ◽  
The Impact

AbstractSpectral ellipsometry (SE) was applied to in situ composition control of Hg1−xCdxTe grown by molecular beam epitaxy (MBE), and the impact of surface topography of the Hg1−xCdxTe layers on the accuracy of SE was investigated. Of particular importance is the presence of surface defects, such as voids in MBE- Hg1−xCdx.Te layers. While dislocations do not have any significant impact on the dielectric functions, the experimental data in this work show that MBE- Hg1−xCdxTe samples having the same composition, but different void densities, have different effective dielectric functions.

In situ spectroscopic ellipsometry in plasma-assisted molecular beam epitaxy of InN under different surface stoichiometries

2006 ◽  
Vol 99 (4) ◽  
pp. 044913 ◽  
Author(s):  
Masayoshi Yoshitani ◽  
Koichiro Akasaka ◽  
Xinqiang Wang ◽  
Song-Bek Che ◽  
Yoshihiro Ishitani ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Spectroscopic Ellipsometry ◽  
Molecular Beam

In situ spectroscopic ellipsometry and RHEED monitored growth of InN nanocolumns by molecular beam epitaxy

2007 ◽  
Vol 301-302 ◽  
pp. 496-499 ◽  
Author(s):  
Xinqiang Wang ◽  
Song-Bek Che ◽  
Yoshihiro Ishitani ◽  
Akihiko Yoshikawa
Keyword(s):  
Molecular Beam Epitaxy ◽  
Spectroscopic Ellipsometry ◽  
Molecular Beam

In Situ Spectroscopic Ellipsometry for Real Time Composition Control of Hg1−xCdxTe Grown by Molecular Beam Epitaxy

1997 ◽  
Vol 484 ◽  
Author(s):  
R. Dat ◽  
F. Aqariden ◽  
W. M. Duncan ◽  
D. Chandra ◽  
H. D. Shih
Keyword(s):  
Experimental Data ◽  
Molecular Beam Epitaxy ◽  
Surface Topography ◽  
Spectroscopic Ellipsometry ◽  
Molecular Beam ◽  
Surface Defects ◽  
Spectral Ellipsometry ◽  
Composition Control ◽  
The Impact

AbstractSpectral ellipsometry (SE) was applied to in situ composition control of Hg1−xCdxTe grown by molecular beam epitaxy (MBE), and the impact of surface topography of the Hg1−xCdxTe layers on the accuracy of SE was investigated. Of particular importance is the presence of surface defects, such as voids in MBE- Hg1−xCdxTe layers. While dislocations do not have any significant impact on the dielectric functions, the experimental data in this work show that MBE- Hg1−xCdxTe samples having the same composition, but different void densities, have different effective dielectric functions.

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