The pumping of gases desorbed by pulsed ruby laser irradiation of a Si(111) surface

1987 ◽  
Vol 5 (4) ◽  
pp. 2507-2511 ◽  
Author(s):  
K. Terada ◽  
Y. Tuzi ◽  
T. Okano
Keyword(s):  
Laser Irradiation ◽  
Ruby Laser

Silicon Bipolar Transistors Fabricated using Ion Implantation and Laser Annealing

1980 ◽  
Vol 1 ◽  
Author(s):  
Nobuyoshi Natsuaki ◽  
Takao Miyazaki ◽  
Makoto Ohkura ◽  
Toru Nakamura ◽  
Masao Tamura ◽  
...  
Keyword(s):  
Low Temperature ◽  
Laser Pulse ◽  
Laser Irradiation ◽  
Ruby Laser ◽  
Laser Annealing ◽  
Bipolar Transistors ◽  
Pulse Irradiation ◽  
Irradiation Effects ◽  
Furnace Annealing ◽  
Temperature Furnace

ABSTRACTBipolar transistors with laser annealed base and emitter, as well as those with furnace annealed base and laser annealed emitter, have been successfully fabricated using Q-switched ruby laser pulse irradiation. The performance of laser asannealed transistors is rather poor. However, it can be improved, to some extent, by relatively low temperature furnace annealing after laser irradiation. DC and RF characteristics of laser annealed transistors are presented in conjunction with laser irradiation effects on the characteristics of conventionally fabricated transistors.

Pulsed Laser Annealing of Aluminum

1980 ◽  
Vol 1 ◽  
Author(s):  
W. R. Wampler ◽  
D. M. Follstaedt ◽  
P. S. Peercy
Keyword(s):  
Single Crystal ◽  
Laser Irradiation ◽  
Reasonable Agreement ◽  
Ruby Laser ◽  
Laser Annealing ◽  
Ion Beam ◽  
Pulsed Laser ◽  
Nucleation Time ◽  
Pulsed Laser Annealing ◽  
Beam Analysis

ABSTRACTPulsed ruby laser irradiation of unimplanted single crystal and implanted polycrystalline Al has been studied with ion beam analysis and TEM. The results show that Al is melted to a depth of ∼ 0.9 μm with a 4.2 J/cm2 , 15 nsec pulse, and that vacancies are quenched into Al during resolidification. Diffusion of Zn in liquid Al is observed, and a melt time of ∼ 65 nsec is estimated for a 3.8 J/cm2, 30 nsec pulse. The observations are in reasonable agreement with calculations of sample temperature and melt times. We observe no precipitation of AlSb in liquid Al for Sbimplanted Al, and conclude that the nucleation time satisfies 50 nsec ≲ tnuc ≲ 200 nsec. We find no evidence for amorphous Al after irradiation of single crystal Al with energies ≳ 1.5 J/cm2.

Formation of diamond particulates by pulsed ruby laser irradiation of graphite immersed in benzene

1992 ◽  
Vol 84 (4) ◽  
pp. 371-373 ◽  
Author(s):  
S.B Ogale ◽  
A.P Malshe ◽  
S.M Kanetkar ◽  
S.T Kshirsagar
Keyword(s):  
Laser Irradiation ◽  
Ruby Laser

DLTS Study of Pulsed Ruby Laser Irradiation Effects on n-CdTe

1985 ◽  
Vol 24 (Part 2, No. 5) ◽  
pp. L329-L331 ◽  
Author(s):  
Masahiko Tomitori ◽  
Makoto Kuriki ◽  
Sugio Ishii ◽  
Shigeru Fuyuki ◽  
Sohachiro Hayakawa
Keyword(s):  
Laser Irradiation ◽  
Ruby Laser ◽  
Irradiation Effects

scholarly journals Formation of highly toxic hydrogen cyanide upon ruby laser irradiation of the tattoo pigment phthalocyanine blue

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Ines Schreiver ◽  
Christoph Hutzler ◽  
Peter Laux ◽  
Hans-Peter Berlien ◽  
Andreas Luch
Keyword(s):  
Laser Irradiation ◽  
Hydrogen Cyanide ◽  
Ruby Laser ◽  
Tattoo Pigment

Laser Quenching of Amorphous Si from the Melt Containing Dopants

1983 ◽  
Vol 23 ◽  
Author(s):  
S. U. Campisano ◽  
D. C. Jacobson ◽  
J. M. Poate ◽  
A. G. Cullis ◽  
N. G. Chew
Keyword(s):  
Laser Irradiation ◽  
Ruby Laser ◽  
Metal Layer ◽  
Amorphous Layer ◽  
Irradiation Condition ◽  
Uv Laser ◽  
Surface Layers ◽  
Interfacial Segregation ◽  
Amorphous Si ◽  
Amorphous Surface

ABSTRACTThe formation of amorphous Si by the quench of a thin surface layer melted by fast UV laser irradiation has been investigated. The starting (111) surface layers were either pure or doped with As, Bi, In and Te by implantation. The asimplanted samples were recrystallized by ruby laser irradiation resulting in surface accumulation of Bi,In and Te. For the same UV irradiation condition, the amorphous layer formed in As, Bi, In or Te doped Si is about twice the thickness of the amorphous layer formed on pure Si. In the presence of the surface accumulation of Bi, In or Te, the amorphization results in an inward segregation of the dopant. For In, a very thin metal layer ˜15Å thick, is formed 150Å beneath the amorphous surface. These results show that the amorphous-liquid interfacial segregation coefficients for Bi, In or Te are less than unity and that the amorphous solidification proceeds from the surface and bottom of the liquid layer.

Gene Expression Profiling of Melanocytes following Q-Switched Ruby Laser Irradiation

Dermatology ◽  
2007 ◽  
Vol 216 (1) ◽  
pp. 6-13 ◽  
Author(s):  
Christian Hafner ◽  
Thomas Stempfl ◽  
Wolfgang Bäumler ◽  
Ulrich Hohenleutner ◽  
Michael Landthaler ◽  
...  
Keyword(s):  
Gene Expression ◽  
Gene Expression Profiling ◽  
Laser Irradiation ◽  
Expression Profiling ◽  
Ruby Laser

Oxidation Effects During the Formation of Buried Sb Dopant Profiles in Silicon Using Pulsed Laser Epitaxy

1991 ◽  
Vol 235 ◽  
Author(s):  
Randall J. Carolissen ◽  
R. Pretorius
Keyword(s):  
Single Crystal ◽  
Laser Irradiation ◽  
Oxidation Kinetics ◽  
Ruby Laser ◽  
Pulsed Laser ◽  
Single Crystal Silicon ◽  
Heating Time ◽  
No Oxidation ◽  
Crystal Silicon ◽  
Oxygen Concentrations

ABSTRACTSevere oxidation inhibited epitaxy when buried Sb profiles in single crystal silicon were formed from evaporated layers irradiated in atmosphere with a pulsed Q-switched ruby laser. Oxygen concentrations as high as 5×1017atoms/cm2 (equivalent to 105nm SiO2) were measured. However, structures prepared without the Sb layer and irradiated under identical conditions, showed no oxidation. Oxidation of Sb as a source of the measured oxygen was ruled out, while the total heating time during laser irradiation is so short (nano- to milliseconds) that normal oxidation kinetics cannot account for the amount of SiO2 measured. Irradiations in vacuum and in a helium ambient showed that the oxygen responsible for these effects is supplied from the ambient in which irradiations are carried out. Also no oxidation was observed when structures, prepared on a substrate heated to 350°C, were irradiated in atmosphere. A model to account for these oxidation effects is proposed.

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