Free‐carrier spin‐induced Faraday rotation in HgCdTe and HgMnTe

1987 ◽  
Vol 5 (5) ◽  
pp. 3040-3042 ◽  
Author(s):  
S. Y. Yuen ◽  
P. A. Wolff ◽  
P. Becla ◽  
D. Nelson
Keyword(s):  
Faraday Rotation ◽  
Free Carrier

Free‐Carrier Faraday Rotation of Dendritic InSb Films in the Microwave X‐Band Region

1967 ◽  
Vol 38 (8) ◽  
pp. 3171-3178 ◽  
Author(s):  
D. J. White ◽  
R. J. Dinger ◽  
H. H. Wieder
Keyword(s):  
Faraday Rotation ◽  
Free Carrier ◽  
Band Region ◽  
X Band

Free‐carrier induced saturation of the Faraday rotation in semimagnetic semiconductors

1995 ◽  
Vol 66 (16) ◽  
pp. 2043-2045 ◽  
Author(s):  
S. Hugonnard‐Bruyère ◽  
C. Buss ◽  
R. Frey ◽  
C. Flytzanis
Keyword(s):  
Faraday Rotation ◽  
Free Carrier ◽  
Semimagnetic Semiconductors

Free-carrier Faraday rotation in InAsxSb1−x alloys

1968 ◽  
Vol 46 (10) ◽  
pp. 1199-1206 ◽  
Author(s):  
Eric H. van Tongerloo ◽  
John C. Woolley
Keyword(s):  
Matrix Element ◽  
Carrier Concentration ◽  
Faraday Rotation ◽  
Hall Coefficient ◽  
Room Temperature ◽  
Calculated Data ◽  
Free Carrier ◽  
Similar Data ◽  
The Matrix ◽  
Power Measurements

Room-temperature free-carrier Faraday rotation measurements in the wavelength range 6–25 μ and Hall-coefficient measurements have been made on polycrystalline n-type samples of InAsxSb1−x alloys of carrier concentration ~1017/cm3. Using these data and a Kane equation for the conduction band, values of the bottom of the band effective mass m0* have been determined over the whole alloy range. The results are compared with similar data from magnetothermoelectric power measurements and also with previously calculated data. From the m0* results, values of the square of the matrix element P2 have been calculated as a function of x.

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