Summary Abstract: Rf‐sputter‐deposited multilayer thin film oxygen sensors

1983 ◽  
Vol 1 (2) ◽  
pp. 322-322 ◽  
Author(s):  
M. A. Ray ◽  
J. E. Greene ◽  
A. J. Polack ◽  
L. B. Welsh
Keyword(s):  
Thin Film ◽  
Oxygen Sensors ◽  
Multilayer Thin Film ◽  
Sputter Deposited

Fast Thermal Cycling - Enhanced Electromigratton Failures in Si/TiSi2W-Ti/Al-Si-Cu Multilayer Contacts

1995 ◽  
Vol 391 ◽  
Author(s):  
Victor V. Ivkin ◽  
Valentin V. Baranov
Keyword(s):  
Thin Film ◽  
Barrier Layer ◽  
Contact Region ◽  
Electrical Current ◽  
Temperature Cycling ◽  
Cycle Period ◽  
Multilayer Thin Film ◽  
Sputter Deposited ◽  
The One ◽  
High Constant Temperature

AbstractFailure mechanisms of TiSi2/W-Ti(15%)/Al-Si(l%)-Cu(2%) multilayer thin film contact to silicon shallow junction (0,25 μm) have been investigated. Both a fast temperature cycling (with 300 ms thermal cycle period) and a high constant temperature were used as means for the degradation processes acceleration. We have shown that stress time could be reduced by the factor of 10 or more if the temperature of adjacent contact region was cycled by a pulsed electrical current passed through the semiconductor region lying under the investigated contacts. Our data have also indicated that W-Ti barrier layer serves to reduce drastically the electromigration degradation of thin film contacts for failures caused by an increase in junction leakage on the one hand and on the other hand it serves to intensify the electromigration degradation caused by an increase in contact resistance. These distinctions have been explained through structural-morphological investigations of the contact layers surface morphology. They showed a reduction in size of crystallines of the sputter deposited Al-Si-Cu top layer with W-Ti barrier layer present.

Fast Thermal Cycling and Electro-Migration Properties of Si/TaSi2/TiN/Al-Si Multilayer Thin Film Contacts

1994 ◽  
Vol 337 ◽  
Author(s):  
Valentin V.Baranov ◽  
Victor M.Ivkin ◽  
Elena L.Sakovitch
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Life Time ◽  
Electrical Current ◽  
Cycle Period ◽  
Multilayer Thin Film ◽  
Optimal Conditions ◽  
Average Grain Size ◽  
Sputter Deposited ◽  
Temperature Test

ABSTRACTFor the electromigration test of Si/TaSi2/(Al-1wt%Si) and Si/TaSi2/TiN/(Al-1wt%Si) multilayer contacts we employed the special test structures which allow to passage a pulsed electrical current through the semiconductor region lying under investigated contacts and insulated from them by n+/p-junction. The contacts were tested in the optimal conditions (temperature was cycled in the ranges from 50°C to 175°C with 300ms thermal cycle period at 25 mA constant electrical current passaged through the investigated contacts). It has been shown that the electromigration life time has been shortened by more than an order of the magnitude compared to 200°C constant temperature test. SEM investigations of the sputter deposited thin film of multilayer contact have also shown that the Al-Si thin film on the TaSi2 layer had a fine structure with the average grain size about 0,3 μm. However a presense of the TiN interlayer with the thickness of 0.05 - 0.1 pm results in an increase of the average grain size of the upper Al-Si film up to 0,8μm. The result is the increase in the electromigration process activation energy that improves the electromigration life time contacts containing the TiN interlayer.

scholarly journals Selective normal mode excitation in multilayer thin film bulk acoustic wave resonators

2014 ◽  
Vol 105 (16) ◽  
pp. 162910 ◽  
Author(s):  
Andrey Kozyrev ◽  
Anatoly Mikhailov ◽  
Sergey Ptashnik ◽  
Peter K. Petrov ◽  
Neil Alford
Keyword(s):  
Thin Film ◽  
Acoustic Wave ◽  
Normal Mode ◽  
Bulk Acoustic Wave ◽  
Multilayer Thin Film ◽  
Mode Excitation ◽  
Film Bulk ◽  
Acoustic Wave Resonators ◽  
Bulk Acoustic Wave Resonators

Sputter Deposition of Fe-Co Nitride for Ferromagnetic Granular Nitride Thin Film

2009 ◽  
Vol 631-632 ◽  
pp. 327-331 ◽  
Author(s):  
K. Sakon ◽  
Y. Hirokawa ◽  
Yasuji Masubuchi ◽  
Shinichi Kikkawa
Keyword(s):  
Thin Film ◽  
Solid Solution ◽  
Thermal Decomposition ◽  
Sputter Deposition ◽  
Composite Target ◽  
Zinc Blende ◽  
Alloy Particles ◽  
Sputter Deposited ◽  
Magneto Resistance ◽  
Zinc Blende Structure

Sputter deposited Fe0.7Co0.3 nitride thin film had zinc blende structure. It was thermally decomposed completely back to the ferromagnetic Fe0.7Co0.3 alloy above 400°C. As-deposited nitride thin films obtained in cosputtering of (Fe0.7Co0.3)1-xAlx composite target with nitrogen sputter gas were solid solutions with zinc blende (x≤0.44) and wurtzite (x>0.5) type structure, respectively. The largest magneto resistance ratio of 0.24% was observed on the Fe0.7Co0.3 alloy particles dispersed in AlN thin film obtained by thermal decomposition of the nitride solid solution with x=0.66 at 500°C.

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