Single‐crystal GaAs films on amorphous substrates by the CLEFT process

1982 ◽  
Vol 20 (3) ◽  
pp. 720-725 ◽  
Author(s):  
C. O. Bozler ◽  
R. W. McClelland ◽  
J. P. Salerno ◽  
J. C. C. Fan
Keyword(s):  
Single Crystal ◽  
Gaas Films ◽  
Amorphous Substrates ◽  
Crystal Gaas

Microstructural characterization of YBaCuO Films on LaAlO3 substrates

1989 ◽  
Vol 47 ◽  
pp. 180-181
Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
N. Lewis ◽  
L. G. Turner
Keyword(s):  
Dielectric Constant ◽  
Single Crystal ◽  
Film Growth ◽  
Microstructural Characterization ◽  
Lattice Parameter ◽  
Film Plane ◽  
Substrate Material ◽  
High Loss ◽  
Amorphous Substrates ◽  
High Dielectric

There have been a large number of recent studies of the growth of Y-Ba-Cu-O thin films, and these studies have employed a variety of substrates and growth techniques. To date, the highest values of Tc and Jc have been found for films grown by sputtering or coevaporation on single-crystal SrTiO3 substrates, which produces a uniaxially-aligned film with the YBa2Cu3Ox c-axis normal to the film plane. Multilayer growth of films on the same substrate produces a triaxially-aligned film (regions of the film have their c-axis parallel to each of the three substrate <100> directions) with lower values of Jc. Growth of films on a variety of other polycrystalline or amorphous substrates produces randomly-oriented polycrystalline films with low Jc. Although single-crystal SrTiO3 thus produces the best results, this substrate material has a number of undesireable characteristics relative to electronic applications, including very high dielectric constant and a high loss tangent at microwave frequencies. Recently, Simon et al. have shown that LaAlO3 could be used as a substrate for YBaCuO film growth. This substrate is essentially a cubic perovskite with a lattice parameter of 0.3792nm (it has a slight rhombohedral distortion at room temperature) and this material exhibits much lower dielectric constant and microwave loss tangents than SrTiO3. It is also interesting from a film growth standpoint since it has a slightly smaller lattice parameter than YBa2Cu3Ox (a=0.382nm, b=c/3=0.389nm), while SrTiO3 is slightly larger (a=0.3905nm).

Thermal Oxidation of a Single-Crystal GaAs Surface Treated in Sulfur Vapor

2021 ◽  
Vol 57 (7) ◽  
pp. 663-668
Author(s):  
I. Ya. Mittova ◽  
B. V. Sladkopevtsev ◽  
A. I. Dontsov ◽  
Yu. V. Syrov ◽  
A. S. Kovaleva ◽  
...  
Keyword(s):  
Single Crystal ◽  
Thermal Oxidation ◽  
Gaas Surface ◽  
Sulfur Vapor ◽  
Crystal Gaas

Ribbon Growth of Single Crystal GaAs for Solar Cell Application.

1981 ◽  
Author(s):  
Theresa A. Gould ◽  
Raymond G. Seidensticker ◽  
Robert Mazelsky
Keyword(s):  
Solar Cell ◽  
Single Crystal ◽  
Solar Cell Application ◽  
Crystal Gaas ◽  
Ribbon Growth

Fabrication of single crystal GaAs(001) barriers for magnetic tunnel junctions

2001 ◽  
Vol 89 (11) ◽  
pp. 6751-6753 ◽  
Author(s):  
Stephan Kreuzer ◽  
Werner Wegscheider ◽  
Dieter Weiss
Keyword(s):  
Single Crystal ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Crystal Gaas

MOCVD growth of TiO2 thin films on single crystal GaAs substrates

2000 ◽  
Vol 2 (2-3) ◽  
pp. 255-259 ◽  
Author(s):  
M.C. Marco de Lucas ◽  
F. Fabreguette ◽  
S. Collin ◽  
S. Bourgeois
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Tio2 Thin Films ◽  
Mocvd Growth ◽  
Gaas Substrates ◽  
Crystal Gaas

scholarly journals A self-aligning microtensile setup: Application to single-crystal GaAs microscale tension–compression asymmetry

2019 ◽  
Vol 34 (14) ◽  
pp. 2517-2534 ◽  
Author(s):  
Daniele Casari ◽  
Laszlo Pethö ◽  
Patrik Schürch ◽  
Xavier Maeder ◽  
Laetitia Philippe ◽  
...  
Keyword(s):  
Single Crystal ◽  
Crystal Gaas ◽  
Image Position ◽  
Tension Compression Asymmetry

Abstract

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