Multi‐aperture ion source with a deflectable focused beam for compositional control in sputter deposition

1981 ◽  
Vol 19 (3) ◽  
pp. 704-708 ◽  
Author(s):  
J. W. Smits
Keyword(s):  
Ion Source ◽  
Sputter Deposition ◽  
Compositional Control ◽  
Focused Beam

A Novel Method of Sputter Deposition Utilizing a Hot-Cathode Penning Ion Source

1990 ◽  
Vol 29 (Part 2, No. 5) ◽  
pp. L812-L814 ◽  
Author(s):  
Fumiya Shoji ◽  
Kenjiro Oura
Keyword(s):  
Ion Source ◽  
Sputter Deposition ◽  
Novel Method

Compositional control of AuPt nanoparticles synthesized in ionic liquids by the sputter deposition technique

CrystEngComm ◽  
2012 ◽  
Vol 14 (15) ◽  
pp. 4922 ◽  
Author(s):  
Shushi Suzuki ◽  
Toshimasa Suzuki ◽  
Yousuke Tomita ◽  
Masanori Hirano ◽  
Ken-ichi Okazaki ◽  
...  
Keyword(s):  
Ionic Liquids ◽  
Sputter Deposition ◽  
Deposition Technique ◽  
Compositional Control

Ion-beam sputter deposition process for Y1Ba2Cu3O7-δ thin-film structures

1994 ◽  
Vol 9 (11) ◽  
pp. 2747-2760 ◽  
Author(s):  
J-P. Krumme ◽  
V. Doormann ◽  
F. Welz ◽  
O. Dösssel ◽  
H. van Hal
Keyword(s):  
Ion Beam ◽  
Salient Feature ◽  
Charge Compensation ◽  
Deposition Process ◽  
Plasma Electron ◽  
Ion Source ◽  
Sputter Deposition ◽  
Morphological Properties ◽  
Rf Plasma ◽  
Ion Beam Sputter Deposition

Ion-beam sputter deposition (IBS) has been developed to a fully oxygen-compatible technology for growth of complex oxides, such as Y1Ba2Cu3O7−δ (YBCO) thin films. The IBS system consists of an rf-plasma ion source with molybdenum grids for sputtering, a dc-plasma electron source for space charge compensation, stoichiometric YBCO and NGO targets, a beam chopper with BaO2, Cu, and Nd blades for stoichiometry control, and an ECR-oxygen-plasma source for in situ film oxidation and photoresist removal. Due to its complexity the IBS process is fully computer-controlled. A salient feature of IBS is the excellent crystallographic and morphological properties of thin (100)/(010)- and (103)-oriented YBCO films on SrTiO3 (STO) and NdGaO3 (NGO) substrates. Sharp interfaces and good superconducting properties render this technology feasible for the fabrication of SIS-ramp-junction SQUID's.

scholarly journals Gaseous Field Ion Source for Fine Focused Beam.

Shinku ◽  
1992 ◽  
Vol 35 (10) ◽  
pp. 823-830
Author(s):  
Tsutomu TERAOKA ◽  
Hideaki NAKANE ◽  
Hiroshi ADACHI
Keyword(s):  
Ion Source ◽  
Focused Beam

Nucleation and Early Growth of Sputtered thin Films

1970 ◽  
Vol 28 ◽  
pp. 516-517
Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Water Cooling ◽  
Stages Of Growth ◽  
Lens Assembly ◽  
Microscope Technique ◽  
Ion Beam Sputter Deposition

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.

STM studies of crystal growth

1991 ◽  
Vol 49 ◽  
pp. 374-375
Author(s):  
M. G. Lagally
Keyword(s):  
Crystal Growth ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Sputter Deposition ◽  
Field Of View ◽  
Scanning Tunneling ◽  
Wide Field ◽  
Tunneling Microscopy ◽  
Wide Field Of View ◽  
The One

It has been recognized since the earliest days of crystal growth that kinetic processes of all Kinds control the nature of the growth. As the technology of crystal growth has become ever more refined, with the advent of such atomistic processes as molecular beam epitaxy, chemical vapor deposition, sputter deposition, and plasma enhanced techniques for the creation of “crystals” as little as one or a few atomic layers thick, multilayer structures, and novel materials combinations, the need to understand the mechanisms controlling the growth process is becoming more critical. Unfortunately, available techniques have not lent themselves well to obtaining a truly microscopic picture of such processes. Because of its atomic resolution on the one hand, and the achievable wide field of view on the other (of the order of micrometers) scanning tunneling microscopy (STM) gives us this opportunity. In this talk, we briefly review the types of growth kinetics measurements that can be made using STM. The use of STM for studies of kinetics is one of the more recent applications of what is itself still a very young field.

Observation by HVEM of the martensite transformation and the superconducting transition in Nb3Sn

1988 ◽  
Vol 46 ◽  
pp. 788-789
Author(s):  
M. A. Kirk ◽  
M. C. Baker ◽  
B. J. Kestel ◽  
H. W. Weber
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Superconducting State ◽  
Martensite Transformation ◽  
Sputter Deposition ◽  
Diffusion Reaction ◽  
Solute Diffusion ◽  
Superconducting Transition ◽  
Twin Boundaries ◽  
Martensite Structure

It is well known that a number of compound superconductors with the A15 structure undergo a martensite transformation when cooled to the superconducting state. Nb3Sn is one of those compounds that transforms, at least partially, from a cubic to tetragonal structure near 43 K. To our knowledge this transformation in Nb3Sn has not been studied by TEM. In fact, the only low temperature TEM study of an A15 material, V3Si, was performed by Goringe and Valdre over 20 years ago. They found the martensite structure in some foil areas at temperatures between 11 and 29 K, accompanied by faults that consisted of coherent twin boundaries on {110} planes. In pursuing our studies of irradiation defects in superconductors, we are the first to observe by TEM a similar martensite structure in Nb3Sn.Samples of Nb3Sn suitable for TEM studies have been produced by both a liquid solute diffusion reaction and by sputter deposition of thin films.

Aspects of high-resolution imaging with a scanning ion microprobe

1986 ◽  
Vol 44 ◽  
pp. 750-751
Author(s):  
R. Levi-Setti ◽  
J. M. Chabala ◽  
Y. L. Wang
Keyword(s):  
Metal Ion ◽  
Secondary Ion Mass Spectrometry ◽  
Chromatic Aberration ◽  
Ion Source ◽  
Ion Microprobe ◽  
Emission Pattern ◽  
Intrinsic Resolution ◽  
Resolution Imaging ◽  
20 Nm ◽  
Secondary Ion

We have shown the feasibility of 20 nm lateral resolution in both topographic and elemental imaging using probes of this size from a liquid metal ion source (LMIS) scanning ion microprobe (SIM). This performance, which approaches the intrinsic resolution limits of secondary ion mass spectrometry (SIMS), was attained by limiting the size of the beam defining aperture (5μm) to subtend a semiangle at the source of 0.16 mr. The ensuing probe current, in our chromatic-aberration limited optical system, was 1.6 pA with Ga+ or In+ sources. Although unique applications of such low current probes have been demonstrated,) the stringent alignment requirements which they imposed made their routine use impractical. For instance, the occasional tendency of the LMIS to shift its emission pattern caused severe misalignment problems.

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