Summary Abstract: Auger shifts and characterization of electronic structure of alloys containing noble metals

1981 ◽  
Vol 18 (2) ◽  
pp. 585-586 ◽  
Author(s):  
G. G. Kleiman ◽  
V. S. Sundaram ◽  
J. D. Rogers
Keyword(s):  
Electronic Structure ◽  
Noble Metals

Characterization of electronic structure of superconducting (Cu, C)–Ba–O films byin situphotoemission spectroscopy

2007 ◽  
Vol 20 (11) ◽  
pp. S455-S460 ◽  
Author(s):  
K Kikunaga ◽  
K Takeshita ◽  
T Yamamoto ◽  
T Okuda ◽  
Y Tanaka ◽  
...  
Keyword(s):  
Electronic Structure

Growth and Characterization of the Binary Defect Alloy Cu2-xSe and the Relation to II–VI/I–III–VI Heterojunction Formation

1995 ◽  
Vol 378 ◽  
Author(s):  
Art J. Nelson ◽  
K. Sinha ◽  
John Moreland
Keyword(s):  
Electronic Structure ◽  
Valence Band ◽  
Photoemission Spectroscopy ◽  
Interfacial Chemistry ◽  
Valence Band Offset ◽  
Force Microscopy ◽  
Atomic Force ◽  
Valence Band Discontinuity

AbstractSynchrotron radiation soft x-ray photoemission spectroscopy was used to investigate the development of the electronic structure at the CdS/Cu2Se heterojunction interface. Cu2−xSe layers were deposited on GaAs (100) by molecular beam epitaxy from Cu2Se sources. Raman spectra reveal a strong peak at 270 cm−1, indicative of the Cu2−xSe phase. Atomic force microscopy reveals uniaxial growth in a preferred (100) orientation. CdS overlayers were then deposited in-situ, at room temperature, in steps on these epilayers. Photoemission measurements were acquired after each growth in order to observe changes in the valence band electronic structure as well as changes in the Se3d and Cd4d core lines. The results were used to correlate the interfacial chemistry with the electronic structure and to directly determine the CdS/Cu2−xSe and heterojunction valence band discontinuity and the consequent heterojunction band diagram. These results are compared to the valence band offset (ΔEv) for the CdS/CuInSe2 heterojunction interface.

ChemInform Abstract: Comprehensive Characterization of the Electronic Structure of U4+in Uranium(IV) Phosphate Chloride.

ChemInform ◽  
2016 ◽  
Vol 47 (37) ◽  
Author(s):  
Anna Bronova ◽  
Thomas Dross ◽  
Robert Glaum ◽  
Heiko Lueken ◽  
Manfred Speldrich ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Comprehensive Characterization

scholarly journals Electronic characterization of silicon intercalated chevron graphene nanoribbons on Au(111)

2018 ◽  
Vol 54 (13) ◽  
pp. 1619-1622 ◽  
Author(s):  
O. Deniz ◽  
C. Sánchez-Sánchez ◽  
R. Jaafar ◽  
N. Kharche ◽  
L. Liang ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Graphene Nanoribbons

The intrinsic electronic structure of chevron graphene nanoribbons are revealed through in situ silicon intercalation.

scholarly journals The missing pieces of the PuO2 nanoparticle puzzle

Nanoscale ◽  
2020 ◽  
Vol 12 (35) ◽  
pp. 18039-18048 ◽  
Author(s):  
Evgeny Gerber ◽  
Anna Yu. Romanchuk ◽  
Ivan Pidchenko ◽  
Lucia Amidani ◽  
Andre Rossberg ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Atomic Level ◽  
Full Characterization ◽  
Theoretical Approaches

We report a full characterization of PuO2 nanoparticles at the atomic level and probe their local and electronic structure by a variety of methods available at the synchrotron and theoretical approaches.

Characterization of the electronic structure of defect in quartz by pulsed EPR spectroscopy

2012 ◽  
Vol 376 (32) ◽  
pp. 2195-2199 ◽  
Author(s):  
Pengbo Feng ◽  
Ya Wang ◽  
Xing Rong ◽  
Ji-Hu Su ◽  
Chenyong Ju ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Epr Spectroscopy ◽  
Pulsed Epr

Ruddlesden-Popper zirconium sulfides—a novel preparation method and characterization of electronic structure

1995 ◽  
Vol 229 (1) ◽  
pp. 216-222 ◽  
Author(s):  
J. Yan ◽  
M. Greenblatt ◽  
A. Sahiner ◽  
D. Sills ◽  
M. Croft
Keyword(s):  
Electronic Structure ◽  
Preparation Method
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