Low‐intrinsic‐stress and good‐adhesion alloy thin films

1976 ◽  
Vol 13 (1) ◽  
pp. 99-101 ◽  
Author(s):  
H. C. Tong ◽  
C. M. Lo ◽  
W. F. Traber
Keyword(s):  
Thin Films ◽  
Intrinsic Stress ◽  
Good Adhesion

Structural, Morphological and Adhesion Properties of Cofeb Thin Films Deposited by DC Magnetron Sputtering

2013 ◽  
Vol 802 ◽  
pp. 47-52
Author(s):  
Chuleerat Ibuki ◽  
Rachasak Sakdanuphab
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Magnetron Sputtering ◽  
Crystalline Structure ◽  
Glass Substrate ◽  
Intrinsic Stress ◽  
Dc Magnetron Sputtering ◽  
Adhesion Properties ◽  
Sputtering Power

In this work the effects of amorphous (glass) and crystalline (Si) substrates on the structural, morphological and adhesion properties of CoFeB thin film deposited by DC Magnetron sputtering were investigated. It was found that the structure of a substrate affects to crystal formation, surface morphology and adhesion of CoFeB thin films. The X-Ray diffraction patterns reveal that as-deposited CoFeB thin film at low sputtering power was amorphous and would become crystal when the power increased. The increase in crystalline structure of CoFeB thin film is attributed to the crystalline substrate and the increase of kinetic energy of sputtering atoms. Atomic Force Microscopy images of CoFeB thin film clearly show that the roughness, grain size, and uniformity correlate to the sputtering power and the structure of substrate. The CoFeB thin film on glass substrate shows a smooth surface and a small grain size whereas the CoFeB thin film on Si substrate shows a rough surface and a slightly increases of grain size. Sticky Tape Test on CoFeB thin film deposited on glass substrate indicates the adhesion failure with a high sputtering power. The results suggest that the crystalline structure of substrate affects to the atomic bonding and the sputtering power affects to intrinsic stress of CoFeB thin film.

scholarly journals Determining intrinsic stress and strain state of fibre-textured thin films by X-ray diffraction measurements using combined asymmetrical and Bragg-Brentano configurations

2019 ◽  
Vol 181 ◽  
pp. 108063 ◽  
Author(s):  
Fakhrodin Motazedian ◽  
Zhigang Wu ◽  
Junsong Zhang ◽  
Bashir Samsam Shariat ◽  
Daqiang Jiang ◽  
...  
Keyword(s):  
Thin Films ◽  
Strain State ◽  
Intrinsic Stress ◽  
Stress And Strain ◽  
X Ray Diffraction ◽  
X Ray

Plasma Treatment of Composite Piezoelectric Thin Films for Good Adhesion of Printed Conductive Ink

2020 ◽  
Author(s):  
Kiran Kumar Sappati ◽  
Bishakh Rout ◽  
Pierre-Luc Girard-Lauriault ◽  
Sharmistha Bhadra
Keyword(s):  
Thin Films ◽  
Plasma Treatment ◽  
Conductive Ink ◽  
Good Adhesion ◽  
Piezoelectric Thin Films

Effect of Deposition Conditions on Intrinsic Stress, Phase Transformation and Stress Relaxation in Tantalum Thin Films

1991 ◽  
Vol 239 ◽  
Author(s):  
A. Mutscheller ◽  
L. A. Clevenger ◽  
J.M.E. Harper ◽  
C. Cabrai ◽  
K. Barmakt
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Phase Transformation ◽  
Stress Relaxation ◽  
Compressive Stress ◽  
Stress Relief ◽  
Beta Phase ◽  
Alpha Phase ◽  
Intrinsic Stress

AbstractWe demonstrate that the high temperature polymorphic tantalum phase transition from the tetragonal beta phase to the cubic alpha phase causes complete stress relaxation and a large decrease in the resistance of tantalum thin films. 100 nm beta tantalum thin films were deposited onto thermally oxidized <100> silicon wafers by dc magnetron sputtering with argon. In situ stress and resistance at temperature were measured during temperature-ramped annealing in purified He. Upon heating, films that were initially compressively stressed showed increasing compressive stress due to thermo-elastic deformation from 25 to 550°C, slight stress relief due to plastic deformation from 550 to 700°C and complete stress relief due to the beta to alpha phase transformation at approximately 700–800°C. Incomplete compressive stress relaxation was observed at high temperatures if the film was initially deposited in the alpha phase or if the beta phase did not completely transform into alpha by 800°C. This incomplete beta to alpha phase transition was most commonly observed on samples that had radio frequency substrate bias greater than -100 V. We conclude that the main stress relief mechanism for tantalum thin films is the beta to alpha phase transformation that occurs at 700 to 800°C.

Impact of Heat Treatment on the Electrical Properties of LaNiO3 Conductive Thin Films

2007 ◽  
Vol 280-283 ◽  
pp. 873-876
Author(s):  
Sheng Guo Lu ◽  
Haydn Chen
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Good Adhesion ◽  
Electrode Layer ◽  
Annealing Conditions ◽  
Post Annealing ◽  
Conductive Thin Films ◽  
The Ideal

LaNiO3 (LNO) has been used as bottom electrode layer for ferroelectric and antiferroelectric thin films due to its good conduction, preferred (100) orientation, same crystalline structure as many perovskite ferroelectrics and antiferroelectrics, good adhesion and compatibility with the Pt/Ti/SiO2/Si template. In this study we have investigated the ideal optimal post - annealing conditions for LaNiO3 thin films deposited at 450°C using a magnetron sputtering method. Heat treatment from 500 to 1200°C was performed. Scanning electron microscopy (SEM), x-ray diffraction (XRD) and electrical measurements were carried out to characterize the morphology, structure, and macroscopic properties. Results indicated that the LNO film had the best quality when annealed at about 800°C. Above this temperature, the morphology, structure and associated properties would deteriorate.

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