scholarly journals Perspectives from research on metal-semiconductor contacts: Examples from Ga2O3, SiC, (nano)diamond, and SnS

2020 ◽  
Vol 38 (3) ◽  
pp. 031005
Author(s):  
Lisa M. Porter ◽  
Jenifer R. Hajzus
Author(s):  
A.M. Letsoalo ◽  
M.E. Lee ◽  
E.O. de Neijs

Semiconductor devices require metal contacts for efficient collection of electrical charge. The physics of these metal/semiconductor contacts assumes perfect, abrupt and continuous interfaces between the layers. However, in practice these layers are neither continuous nor abrupt due to poor nucleation conditions and the formation of interfacial layers. The effects of layer thickness, deposition rate and substrate stoichiometry have been previously reported. In this work we will compare the effects of a single deposition technique and multiple depositions on the morphology of indium layers grown on (100) CdTe substrates. The electrical characteristics and specific resistivities of the indium contacts were measured, and their relationships with indium layer morphologies were established.Semi-insulating (100) CdTe samples were cut from Bridgman grown single crystal ingots. The surface of the as-cut slices were mechanically polished using 5μm, 3μm, 1μm and 0,25μm diamond abrasive respectively. This was followed by two minutes immersion in a 5% bromine-methanol solution.


Author(s):  
Michael R. Scudder ◽  
Bin He ◽  
Yaxian Wang ◽  
Akash Rai ◽  
David Cahill ◽  
...  

The principal challenges in current thermoelectric power generation modules is the availability of stable, diffusion-resistant, lossless electrical and thermal metal-semiconductor contacts that do not degrade at the hot end nor...


2002 ◽  
Vol 240 (1-3) ◽  
pp. 217-219
Author(s):  
Arnaud Bournel ◽  
Philippe Dollfus ◽  
Patrice Hesto

1990 ◽  
Vol 181 ◽  
Author(s):  
J. M. Gibson ◽  
D. Loretto ◽  
D. Cherns

ABSTRACTWe have studied the formation of metal silicides in-situ in an ultra-high vacuum transmission electron microscope. Metals were deposited on in-situ cleaned, reconstructed silicon surfaces and annealed. For the metals Ni and Co, we find that the phase sequence in ultra-thin films is different from that seen in ≈1000 Å thick films, and attribute this to the high surface-to-volume ratio. In general reactions occur at room temperature, to form an epitaxial phase if possible. We report preliminary new results on the formation of Pd2Si.


1979 ◽  
Vol 50 (8) ◽  
pp. 5539 ◽  
Author(s):  
K. Fossheim ◽  
R. M. Holt ◽  
A. M. Raaen

Sign in / Sign up

Export Citation Format

Share Document