scholarly journals Suspended single-crystalline oxide structures on silicon through wet-etch techniques: Effects of oxygen vacancies and dislocations on etch rates

2020 ◽  
Vol 38 (1) ◽  
pp. 013406
Author(s):  
Zheng Hui Lim ◽  
Matthew Chrysler ◽  
Abinash Kumar ◽  
Jacob P. Mauthe ◽  
Divine P. Kumah ◽  
...  
Keyword(s):  
Oxygen Vacancies ◽  
Single Crystalline ◽  
Crystalline Oxide ◽  
Etch Rates ◽  
Wet Etch

Preparation of YBa2Cu3O7-δ -Coated Conductor on Single Crystalline Oxide Fiber by Hot-Wall MOCVD

1998 ◽  
pp. 623-626
Author(s):  
Masato Hasegawa ◽  
Yutaka Yoshida ◽  
Yoshiaki Ito ◽  
Morihiro Iwata ◽  
Junichi Kawashima ◽  
...  
Keyword(s):  
Coated Conductor ◽  
Single Crystalline ◽  
Oxide Fiber ◽  
Crystalline Oxide

scholarly journals Engineering of self-rectifying filamentary resistive switching in LiNbO3 single crystalline thin film via strain doping

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Tiangui You ◽  
Kai Huang ◽  
Xiaomeng Zhao ◽  
Ailun Yi ◽  
Chen Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Schottky Contact ◽  
Homogeneous Distribution ◽  
Single Crystalline ◽  
Wafer Scale ◽  
Practical Applications ◽  
Crystalline Oxide ◽  
Order Of Magnitude ◽  
Switching Characteristics

AbstractThe abilities to fabricate wafer scale single crystalline oxide thin films on metallic substrates and to locally engineer their resistive switching characteristics not only contribute to the fundamental investigations of the resistive switching mechanism but also promote the practical applications of resistive switching devices. Here, wafer scale LiNbO3 (LNO) single crystalline thin films are fabricated on Pt/SiO2/LNO substrates by ion slicing with wafer bonding. The lattice strain of the LNO single crystalline thin films can be tuned by He implantation as indicated by XRD measurements. After He implantation, the LNO single crystalline thin films show self-rectifying filamentary resistive switching behaviors, which is interpreted by a model that the local conductive filaments only connect/disconnect with the bottom interface while the top interface maintains the Schottky contact. Thanks to the homogeneous distribution of defects in single crystalline thin films, highly reproducible and uniform self-rectifying resistive switching with large on/off ratio over four order of magnitude was achieved. Multilevel resistive switching can be obtained by varying the compliance current or by using different magnitude of writing voltage.

Oxygen-Induced Reversible Sn-Dopant Deactivation between Indium Tin Oxide and Single-Crystalline Oxide Nanowire Leading to Interfacial Switching

2020 ◽  
Vol 12 (47) ◽  
pp. 52929-52936
Author(s):  
Hao Zeng ◽  
Tsunaki Takahashi ◽  
Takehito Seki ◽  
Masaki Kanai ◽  
Guozhu Zhang ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Single Crystalline ◽  
Crystalline Oxide ◽  
Sn Dopant ◽  
Dopant Deactivation

Simple Method to Obtain Large‐Size Single‐Crystalline Oxide Sheets

2020 ◽  
Vol 30 (28) ◽  
pp. 2001236
Author(s):  
Ke Gu ◽  
Tsukasa Katayama ◽  
Shintaro Yasui ◽  
Akira Chikamatsu ◽  
Sou Yasuhara ◽  
...  
Keyword(s):  
Simple Method ◽  
Single Crystalline ◽  
Large Size ◽  
Crystalline Oxide

Silicon Wafer Thinning to Reveal Cu TSV

2012 ◽  
Vol 2012 (DPC) ◽  
pp. 001673-001700 ◽  
Author(s):  
Laura Mauer ◽  
John Taddei ◽  
Ramey Youssef
Keyword(s):  
Silicon Wafer ◽  
Etch Rate ◽  
Cost Effective ◽  
Silicon Etching ◽  
3D Integration ◽  
Process Flow ◽  
Cost Effective Method ◽  
Etch Rates ◽  
Wet Etch ◽  
Wafer Thinning

3D Integration is becoming a reality in device manufacturing. The TSV Middle process is becoming the dominant integration scenario. For this process flow the silicon wafer needs to be thinned to reveal the Cu TSV. Grinding is used to remove the bulk of the silicon wafer. Currently a multistep sequence of processes that includes CMP and plasma have been used to complete the final thinning of the silicon. This paper will describe a simple, cost effective method to wet etch the remaining silicon to reveal the Cu TSVs. KOH is selected as the etchant since it will not attack the TSV materials and has a higher etch rate than TMAH. The development of processes with optimum etch rates and uniformity for silicon etching along with no attack of the Cu via or oxide liner and effective post cleaning to remove residual Potassium will be presented.

A Method of Combining the Increased Density of Acceptors with Restrained Density of Oxygen Vacancies to Fabricate p-Type Single-Crystalline ZnO Films

2018 ◽  
Vol 48 (2) ◽  
pp. 780-786 ◽  
Author(s):  
Zhiyuan Zhang ◽  
Jingyun Huang ◽  
Shanshan Chen ◽  
Xinhua Pan ◽  
Lingxiang Chen ◽  
...  
Keyword(s):  
Oxygen Vacancies ◽  
Zno Films ◽  
Single Crystalline ◽  
P Type
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