In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films

2020 ◽  
Vol 38 (1) ◽  
pp. 012405 ◽  
Author(s):  
Johanna Reif ◽  
Martin Knaut ◽  
Sebastian Killge ◽  
Felix Winkler ◽  
Matthias Albert ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Cobalt Thin Films

Plasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating

2014 ◽  
Vol 259 ◽  
pp. 98-101 ◽  
Author(s):  
Jae-Hyung Park ◽  
Dae-Yong Moon ◽  
Dong-Suk Han ◽  
Yu-Jin Kang ◽  
So-Ra Shin ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Cobalt Thin Films

Area Selective Atomic Layer Deposition of Cobalt Thin Films

2019 ◽  
Vol 16 (4) ◽  
pp. 219-225 ◽  
Author(s):  
Han-Bo-Ram Lee ◽  
Hyungjun Kim
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Cobalt Thin Films

Magnetoresistive properties of cobalt thin films grown by plasma-assisted atomic layer deposition

2020 ◽  
Vol 54 (10) ◽  
pp. 105002
Author(s):  
M Jullien ◽  
C S Chang ◽  
L Badie ◽  
S Robert ◽  
M Hehn ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Cobalt Thin Films

Characteristics of Cobalt Thin Films Deposited by Very High Frequency Plasma Enhanced Atomic Layer Deposition (60 and 100 MHz) Using Cobaltocene (Co(Cp)2)/NH3

2021 ◽  
Vol 21 (3) ◽  
pp. 1826-1832
Author(s):  
Won Gyun Yeom ◽  
Chang Hoon Song ◽  
Chul Hee Cho ◽  
Shin Jae You ◽  
Geun Young Yeom
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
High Frequency ◽  
Atomic Layer ◽  
Very High Frequency ◽  
Carbon Impurity ◽  
Cobalt Films ◽  
Layer Deposition ◽  
Cobalt Thin Films ◽  
Very High

In this study, cobalt films were deposited by plasma enhanced atomic layer deposition (PEALD) with cobaltocene (Co(Cp)2) using two different very high frequency (VHF) NH3 plasmas (60 MHz, 100 MHz), and the effect of different frequencies of VHF on the characteristics of NH3 plasmas and the properties of cobalt films were investigated. It is found that the higher frequency showed the higher plasma density at the same input power and, the NH radicals, which are required to remove the ligands of the cobalt precursor during the plasma exposure step in the ALD cycle, were higher at 100 MHz than those at 60 MHz. The RMS surface roughness and carbon impurity percentage of the deposited cobalt films were lower at the higher frequency possibly indicating denser films due to more active surface reactions at the higher frequency. As a result, it is expected that the cobalt thin films deposited by the higher VHF PEALD will improve the characteristics of deposited thin films.

Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Atomic Layer ◽  
Electric Properties ◽  
X Ray Diffraction ◽  
Layer Deposition ◽  
Azo Thin Film ◽  
Aluminum Doped Zinc Oxide ◽  
Conductive Thin Films

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

scholarly journals Fabrication of GdxFeyOz films using an atomic layer deposition-type approach

CrystEngComm ◽  
2021 ◽  
Author(s):  
Pengmei Yu ◽  
Sebastian M. J. Beer ◽  
Anjana Devi ◽  
Mariona Coll
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Complex Oxide ◽  
Oxide Thin Films ◽  
Layer Deposition ◽  
Atomic Precision

The growth of complex oxide thin films with atomic precision offers bright prospects to study improved properties and novel functionalities.

Inherently Area‐Selective Atomic Layer Deposition of SiO 2 Thin Films to Confer Oxide Versus Nitride Selectivity

2021 ◽  
pp. 2102556
Author(s):  
Jinseon Lee ◽  
Jeong‐Min Lee ◽  
Hongjun Oh ◽  
Changhan Kim ◽  
Jiseong Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition

scholarly journals Structural defects in ZnO thin films grown by atomic layer deposition at low temperatures

2021 ◽  
Vol 27 (S1) ◽  
pp. 2660-2662
Author(s):  
David Elam ◽  
Eduardo Ortega ◽  
Andrey Chabanov ◽  
Arturo Ponce
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Low Temperatures ◽  
Atomic Layer ◽  
Structural Defects ◽  
Zno Thin Films ◽  
Layer Deposition
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