Distinct defect appearance in Gd implanted polar and nonpolar ZnO surfaces in connection to ion channeling effect

2019 ◽  
Vol 37 (6) ◽  
pp. 061406 ◽  
Author(s):  
Adéla Jagerová ◽  
Petr Malinský ◽  
Romana Mikšová ◽  
Pavla Nekvindová ◽  
Jakub Cajzl ◽  
...  
Keyword(s):  
Ion Channeling ◽  
Channeling Effect

scholarly journals On the Protein Crystal Formation as an Interface-Controlled Process with Prototype Ion-Channeling Effect

2007 ◽  
Vol 33 (4) ◽  
pp. 313-329 ◽  
Author(s):  
Jacek Siódmiak ◽  
Jan J. Uher ◽  
Ivan Santamaría-Holek ◽  
Natalia Kruszewska ◽  
Adam Gadomski
Keyword(s):  
Protein Crystal ◽  
Crystal Formation ◽  
Ion Channeling ◽  
Channeling Effect

Ion channeling effect of In dopant in semi‐insulating GaAs

1986 ◽  
Vol 48 (6) ◽  
pp. 411-412 ◽  
Author(s):  
K. Kuriyama ◽  
M. Satoh ◽  
C. Kim
Keyword(s):  
Ion Channeling ◽  
Channeling Effect

Anisotropy of damage productions in electron irradiated molybdenum

1978 ◽  
Vol 36 (1) ◽  
pp. 354-355
Author(s):  
K. Izui ◽  
S. Furuno ◽  
H. Otsu ◽  
T. Nishida ◽  
H. Maeta
Keyword(s):  
Electron Flux ◽  
Threshold Energy ◽  
High Energy ◽  
Voltage Electron ◽  
High Voltage Electron Microscope ◽  
Displacement Threshold ◽  
The Mean ◽  
Channeling Effect ◽  
Different Origins ◽  
Threshold Energies

Anisotropy of damage productions in crystals due to high energy electron bombardment are caused from two different origins. One is an anisotropic displacement threshold energy, and the other is an anisotropic distribution of electron flux near the atomic rows in crystals due to the electron channeling effect. By the n-beam dynamical calculations for germanium and molybdenum we have shown that electron flux at the atomic positions are from ∽4 to ∽7 times larger than the mean incident flux for the principal zone axis directions of incident 1 MeV electron beams, and concluded that such a locally increased electron flux results in an enhanced damage production. The present paper reports the experimental evidence for the enhanced damage production due to the locally increased electron flux and also the results of measurements of the displacement threshold energies for the <100>,<110> and <111> directions in molybdenum crystals by using a high voltage electron microscope.

Scanning ion microscopy images

1987 ◽  
Vol 45 ◽  
pp. 180-181
Author(s):  
R. Levi-Setti ◽  
J.M. Chabala ◽  
Y.L. Wang
Keyword(s):  
Metal Ion ◽  
Secondary Emission ◽  
Scanning Method ◽  
Ion Channeling ◽  
Secondary Ions ◽  
High Resolution Images ◽  
Ion Microscopy ◽  
Z Contrast ◽  
Focused Beams ◽  
Microscopy Images

Finely focused beams extracted from liquid metal ion sources (LMIS) provide a wealth of secondary signals which can be exploited to create high resolution images by the scanning method. The images of scanning ion microscopy (SIM) encompass a variety of contrast mechanisms which we classify into two broad categories: a) Emission contrast and b) Analytical contrast.Emission contrast refers to those mechanisms inherent to the emission of secondaries by solids under ion bombardment. The contrast-carrying signals consist of ion-induced secondary electrons (ISE) and secondary ions (ISI). Both signals exhibit i) topographic emission contrast due to the existence of differential geometric emission and collection effects, ii) crystallographic emission contrast, due to primary ion channeling phenomena and differential oxidation of crystalline surfaces, iii) chemical emission or Z-contrast, related to the dependence of the secondary emission yields on the Z and surface chemical state of the target.

scholarly journals The Examination of Calcium ion Implanted Alumina with Energy Filtered Transmission Electron Microscopy

1997 ◽  
Vol 3 (S2) ◽  
pp. 413-414
Author(s):  
E.M. Hunt ◽  
J.M. Hampikian ◽  
N.D. Evans
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Pure Aluminum ◽  
Lattice Parameter ◽  
Face Centered Cubic ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Knoop Microhardness ◽  
Aluminum Nanocrystals ◽  
Face Centered

Ion implantation can be used to alter the optical response of insulators through the formation of embedded nano-sized particles. Single crystal alumina has been implanted at ambient temperature with 50 keV Ca+ to a fluence of 5 x 1016 ions/cm2. Ion channeling, Knoop microhardness measurements, and transmission electron microscopy (TEM) indicate that the alumina surface layer was amorphized by the implant. TEM also revealed nano-sized crystals ≈7 - 8 nm in diameter as seen in Figure 1. These nanocrystals are randomly oriented, and exhibit a face-centered cubic structure (FCC) with a lattice parameter of 0.409 nm ± 0.002 nm. The similarity between this crystallography and that of pure aluminum (which is FCC with a lattice parameter of 0.404 nm) suggests that they are metallic aluminum nanocrystals with a slightly dilated lattice parameter, possibly due to the incorporation of a small amount of calcium.Energy-filtered transmission electron microscopy (EFTEM) provides an avenue by which to confirm the metallic nature of the aluminum involved in the nanocrystals.

scholarly journals Channeling Effect and Tissue Morphology in a Perfusion Bioreactor Imaged by X-Ray Microtomography

2020 ◽  
Vol 17 (3) ◽  
pp. 301-311
Author(s):  
Claire C. Beauchesne ◽  
Morgan Chabanon ◽  
Benjamin Smaniotto ◽  
Benoît Ladoux ◽  
Benoît Goyeau ◽  
...  
Keyword(s):  
Perfusion Bioreactor ◽  
X Ray ◽  
Tissue Morphology ◽  
Channeling Effect
Sign in / Sign up

Export Citation Format

Share Document