Low temperature surface preparation of GaN substrates for atomic layer epitaxial growth: Assessment of ex situ preparations

2019 ◽  
Vol 37 (2) ◽  
pp. 020908 ◽  
Author(s):  
Samantha G. Rosenberg ◽  
Daniel J. Pennachio ◽  
Christa Wagenbach ◽  
Scooter D. Johnson ◽  
Neeraj Nepal ◽  
...  
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Surface Preparation ◽  
Atomic Layer ◽  
Ex Situ ◽  
Growth Assessment ◽  
Temperature Surface

scholarly journals Low-temperature surface preparation and epitaxial growth of ZnS and Cu2ZnSnS4 on ZnS(1 1 0) and GaP(1 0 0)

2017 ◽  
Vol 478 ◽  
pp. 89-95
Author(s):  
Steven P. Harvey ◽  
Samual Wilson ◽  
Helio Moutinho ◽  
Andrew G. Norman ◽  
Glenn Teeter
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Surface Preparation ◽  
Temperature Surface

Low Temperature Surface Preparation of Vicinal Si(100) for Epitaxial Growth of GaAs on Si

1991 ◽  
Author(s):  
Yoshitaka OKADA ◽  
Haruhiko AJISAWA ◽  
Akira MOKI ◽  
Takeyoshi SUGAYA ◽  
Mitsuo KAWABE
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Surface Preparation ◽  
Gaas On Si ◽  
Temperature Surface

Low-Temperature Surface Cleaning of Si and Successive Plasma-Assisted Epitaxial Growth of GaAs

1987 ◽  
Vol 26 (Part 2, No. 10) ◽  
pp. L1576-L1578 ◽  
Author(s):  
Qing Zhu Gao ◽  
Takashi Hariu ◽  
Shoichi Ono
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Surface Cleaning ◽  
Temperature Surface

scholarly journals Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation

2020 ◽  
Vol 53 (34) ◽  
pp. 345105
Author(s):  
A V Uvarov ◽  
A S Gudovskikh ◽  
V N Nevedomskiy ◽  
A I Baranov ◽  
D A Kudryashov ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Epitaxial Growth ◽  
Atomic Layer ◽  
Plasma Activation ◽  
Layer Deposition

Initial stage of epitaxial growth at low temperature of GaAs and AlAs on Si by atomic layer molecular beam epitaxy (ALMBE) and MBE

1992 ◽  
Vol 123 (3-4) ◽  
pp. 385-392 ◽  
Author(s):  
Y. González ◽  
L. González ◽  
F. Briones ◽  
A. Vilá ◽  
A. Cornet ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Initial Stage

Optimization of SI-Wafer Cleaning and the use of Buffer-Layers for Epitaxial Growth of Sige-Layers by VLPCVD at T = 650 C

1992 ◽  
Vol 259 ◽  
Author(s):  
Matty R. Caymax ◽  
J. Poortmans ◽  
A. Van Ammel ◽  
W. Vandervorst ◽  
J. Vanhellemont ◽  
...  
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Oxide Layer ◽  
Layer Growth ◽  
Buffer Layers ◽  
Ex Situ ◽  
Wafer Cleaning ◽  
Dry Etch ◽  
Water Rinse ◽  
Si Wafer

ABSTRACTFor low-temperature epi-growth in UHV-CVD-systems, the pre-epi, ex-situ cleaning of Si-wafers is known to be very critical. Various ways of etching the chemical oxide-layer after RCA-cleaning have been analysed by SIMS-measurements of the interfacial C, 0 and Bcontamination. Layer growth was performed at 650 C under a flow of 20 sccm of silane at 0.26 Pa. The best results (C and 0 below 2 % of a monolayer, and no detectable amounts of B) were obtained with “dry” etch-procedures, i.e. in which no water-rinse was applied after a normal 2 % HF-dip, or where 1F-vapour was used instead. Growth of Si1-xGex-layers with x < 0.1 succeeds quite well on such prepared substrates; for x between 0.1 and 0.25, we have found the use of a thin, pure Si-buffer layer (150 Å) to be indispensable. For x > 0.25, the growing layer can become quite rough, although this varies in time.

scholarly journals Process Steps for High Quality Si-Based Epitaxial Growth at Low Temperature via RPCVD

Materials ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3733
Author(s):  
Jongwan Jung ◽  
Baegmo Son ◽  
Byungmin Kam ◽  
Yong Sang Joh ◽  
Woonyoung Jeong ◽  
...  
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Chemical Vapor ◽  
Epitaxial Films ◽  
Ex Situ ◽  
High Quality ◽  
Reduced Pressure ◽  
Dry Cleaning ◽  
Gaseous Environment

The key process steps for growing high-quality Si-based epitaxial films via reduced pressure chemical vapor deposition (RPCVD) are investigated herein. The quality of the epitaxial films is largely affected by the following steps in the epitaxy process: ex-situ cleaning, in-situ bake, and loading conditions such as the temperature and gaseous environment. With respect to ex-situ cleaning, dry cleaning is found to be more effective than wet cleaning in 1:200 dilute hydrofluoric acid (DHF), while wet cleaning in 1:30 DHF is the least effective. However, the best results of all are obtained via a combination of wet and dry cleaning. With respect to in-situ hydrogen bake in the presence of H2 gas, the level of impurities is gradually decreased as the temperature increases from 700 °C to a maximum of 850 °C, at which no peaks of O and F are observed. Further, the addition of a hydrogen chloride (HCl) bake step after the H2 bake results in effective in-situ bake even at temperatures as low as 700 °C. In addition, the effects of temperature and environment (vacuum or gas) at the time of loading the wafers into the process chamber are compared. Better quality epitaxial films are obtained when the samples are loaded into the process chamber at low temperature in a gaseous environment. These results indicate that the epitaxial conditions must be carefully tuned and controlled in order to achieve high-quality epitaxial growth.

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