Investigation of digital alloyed AlInSb metamorphic buffers

2018 ◽  
Vol 36 (2) ◽  
pp. 02D111 ◽  
Author(s):  
Vinita Dahiya ◽  
Julia I. Deitz ◽  
David A. Hollingshead ◽  
John A. Carlin ◽  
Tyler J. Grassman ◽  
...  
Keyword(s):  
Metamorphic Buffers

Design and growth of multi-functional InAsP metamorphic buffers for mid-infrared quantum well lasers on InP

2019 ◽  
Vol 125 (8) ◽  
pp. 082537 ◽  
Author(s):  
Daehwan Jung ◽  
Lan Yu ◽  
Sukrith Dev ◽  
Daniel Wasserman ◽  
Minjoo Larry Lee
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Mid Infrared ◽  
Metamorphic Buffers

Mosaic Crystal Model for Dynamical X-Ray Diffraction from Step-Graded InxGa1-xAs and InxAl1-xAs/GaAs (001) Metamorphic Buffers and Device Structures

2017 ◽  
Vol 26 (03) ◽  
pp. 1740019
Author(s):  
P. B. Rago ◽  
J. E. Ayers
Keyword(s):  
Semiconductor Device ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
X Ray Diffraction ◽  
General Applicability ◽  
X Ray ◽  
Device Structures ◽  
Mosaic Crystal ◽  
Crystal Model ◽  
Metamorphic Buffers

In this paper we apply a mosaic crystal model for dynamical x-ray diffraction to step-graded metamorphic semiconductor device structures containing dislocations. This model represents an extension of the previously-reported phase-invariant model, which is broadly applicable and serves as the basis for the x-ray characterization of metamorphic structures, allowing determination of the depth profiles of strain, composition, and dislocation density. The new model has more general applicability and is more appropriate for step-graded metamorphic device structures, which are of particular interest for high electron mobility transistors and light emitting diodes. Here we present the computational details of the mosaic crystal model and demonstrate its application to step-graded InxGa1-xAs/GaAs (001) and InxAl1-xAs/GaAs (001) metamorphic buffers and device structures.

Comparison of different grading schemes in InGaAs metamorphic buffers on GaAs substrate: Tilt dependence on cross-hatch irregularities

2015 ◽  
Vol 357 ◽  
pp. 922-930 ◽  
Author(s):  
Rahul Kumar ◽  
Ankush Bag ◽  
Partha Mukhopadhyay ◽  
Subhashis Das ◽  
Dhrubes Biswas
Keyword(s):  
Gaas Substrate ◽  
Metamorphic Buffers

Single-photon emission at 1.55 μm from MOVPE-grown InAs quantum dots on InGaAs/GaAs metamorphic buffers

2017 ◽  
Vol 111 (3) ◽  
pp. 033102 ◽  
Author(s):  
Matthias Paul ◽  
Fabian Olbrich ◽  
Jonatan Höschele ◽  
Susanne Schreier ◽  
Jan Kettler ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Single Photon ◽  
Photon Emission ◽  
Single Photon Emission ◽  
Inas Quantum Dots ◽  
Metamorphic Buffers

Comparison of mixed anion, InAsyP1−y and mixed cation, InxAl1−xAs metamorphic buffers grown by molecular beam epitaxy on (100) InP substrates

2004 ◽  
Vol 95 (8) ◽  
pp. 3952-3960 ◽  
Author(s):  
M. K. Hudait ◽  
Y. Lin ◽  
M. N. Palmisiano ◽  
C. Tivarus ◽  
J. P. Pelz ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Mixed Cation ◽  
Metamorphic Buffers ◽  
Inp Substrates

Strain relaxation comparison of GaInP and AlInAs metamorphic buffers grown on GaAs substrates

2018 ◽  
Vol 768 ◽  
pp. 74-80
Author(s):  
Kuilong Li ◽  
Wenjia Wang ◽  
Qiang Wang ◽  
Jiancai Leng
Keyword(s):  
Strain Relaxation ◽  
Gaas Substrates ◽  
Metamorphic Buffers

Characteristics of InP on GaAs substrate using Zn-doped Al(Ga)InAs metamorphic buffers

2017 ◽  
Vol 28 (13) ◽  
pp. 9732-9737 ◽  
Author(s):  
Yang He ◽  
Yurun Sun ◽  
Yongming Zhao ◽  
Shuzhen Yu ◽  
Jianrong Dong
Keyword(s):  
Gaas Substrate ◽  
Metamorphic Buffers
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