Effects of cesium ion implantation on the mechanical and electrical properties of porous SiCOH low-k dielectrics

2017 ◽  
Vol 35 (6) ◽  
pp. 061506 ◽  
Author(s):  
Weiyi Li ◽  
Dongfei Pei ◽  
Daniel Benjamin ◽  
Jen-Yung Chang ◽  
Sean W. King ◽  
...  
2016 ◽  
Vol 108 (20) ◽  
pp. 202901 ◽  
Author(s):  
W. Li ◽  
D. Pei ◽  
X. Guo ◽  
M. K. Cheng ◽  
S. Lee ◽  
...  

2007 ◽  
Vol 124-126 ◽  
pp. 185-188
Author(s):  
Jin Heong Yim ◽  
Young Kwon Park ◽  
Jong Ki Jeon

The porous SSQ (silsesquioxane) films were prepared by using alkoxy silyl substituted cyclodextrin (sCD) and methyl substituted cyclodextrin (tCD) based porogen. The mechanical and electrical properties of these deposited films were investigated for the applications as low dielectric materials. The mechanical properties of porous film by using sCD are worse than those by using tCD due to its high pore interconnection length. sCD templated porous films show almost constant pore diameter as a function of porogen concentration due to strong linear polymerization of the sCD molecules through polycondensation.


2010 ◽  
Vol 35 (1) ◽  
pp. 59-69 ◽  
Author(s):  
Fares Serradj ◽  
Rebal Guemini ◽  
Hichem Farh ◽  
Karim Djemmal

2015 ◽  
Vol 57 (11) ◽  
pp. 1485-1490 ◽  
Author(s):  
S. A. Vorozhtsov ◽  
А. P. Khrustalyov ◽  
D. G. Eskin ◽  
S. N. Кulkov ◽  
N. Alba-Baena

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