Near-infrared laser annealing of Ge layers epitaxially grown on Si for high-performance photonic devices
2017 ◽
Vol 35
(5)
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pp. 051206
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2013 ◽
Vol 30
(6)
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pp. 623-628
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Vol 6
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pp. 1800219
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Vol 10
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pp. 193-206
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2021 ◽
Vol 1822
(1)
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pp. 012016