Multiscale approach for simulation of silicon etching using SF6/C4F8 Bosch process

2017 ◽  
Vol 35 (3) ◽  
pp. 03E113 ◽  
Author(s):  
Guillaume Le Dain ◽  
Ahmed Rhallabi ◽  
Marie Claude Fernandez ◽  
Mohamed Boufnichel ◽  
Fabrice Roqueta
Keyword(s):  
Multiscale Approach ◽  
Silicon Etching ◽  
Bosch Process

Deep silicon etching for thermopile structures using a modified Bosch process

2019 ◽  
Vol 18 (02) ◽  
pp. 1 ◽  
Author(s):  
Na Zhou ◽  
Junjie Li ◽  
Henry Radamson ◽  
Lin Li ◽  
Qifeng Jiang ◽  
...  
Keyword(s):  
Silicon Etching ◽  
Bosch Process

Modeling of silicon etching using Bosch process: Effects of oxygen addition on the plasma and surface properties

2018 ◽  
Vol 36 (3) ◽  
pp. 03E109 ◽  
Author(s):  
Guillaume Le Dain ◽  
Ahmed Rhallabi ◽  
Christophe Cardinaud ◽  
Aurélie Girard ◽  
Marie-Claude Fernandez ◽  
...  
Keyword(s):  
Surface Properties ◽  
Silicon Etching ◽  
Bosch Process ◽  
Process Effects ◽  
Oxygen Addition

scholarly journals Comparison between Bosch and STiGer Processes for Deep Silicon Etching

Micromachines ◽  
2021 ◽  
Vol 12 (10) ◽  
pp. 1143
Author(s):  
Thomas Tillocher ◽  
Jack Nos ◽  
Gaëlle Antoun ◽  
Philippe Lefaucheux ◽  
Mohamed Boufnichel ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Cryogenic Temperature ◽  
Plasma Chemistry ◽  
Silicon Etching ◽  
Bosch Process ◽  
Isotropic Etching ◽  
Cryogenic Process ◽  
Sidewall Passivation ◽  
Free Plasma ◽  
O2 Plasma

The cryogenic process is well known to etch high aspect ratio features in silicon with smooth sidewalls. A time-multiplexed cryogenic process, called STiGer, was developed in 2006 and patented. Like the Bosch process, it consists in repeating cycles composed of an isotropic etching step followed by a passivation step. If the etching step is similar for both processes, the passivation step is a SiF4/O2 plasma that efficiently deposits a SiOxFy layer on the sidewalls only if the substrate is cooled at cryogenic temperature. In this paper, it is shown that the STiGer process can achieve profiles and performances equivalent to the Bosch process. However, since sidewall passivation is achieved with polymer free plasma chemistry, less frequent chamber cleaning is necessary, which contributes to increase the throughput.

Seagrass amphipod assemblages in a Mediterranean marine protected area: a multiscale approach

2014 ◽  
Vol 506 ◽  
pp. 175-192 ◽  
Author(s):  
N Sturaro ◽  
G Lepoint ◽  
A Pérez-Perera ◽  
S Vermeulen ◽  
P Panzalis ◽  
...  
Keyword(s):  
Protected Area ◽  
Marine Protected Area ◽  
Multiscale Approach

ИССЛЕДОВАНИЕ ПРОЦЕССА ГЛУБОКОГО ТРАВЛЕНИЯ КРЕМНИЯ С МИНИМАЛЬНОЙ ШЕРОХОВАТОСТЬЮ СТЕНОК И ДНА СТРУКТУР

2020 ◽  
Vol 96 (3s) ◽  
pp. 668-675
Author(s):  
Я.А. Мирошкин
Keyword(s):  
Analytical Model ◽  
Phenomenological Description ◽  
Silicon Etching ◽  
Anisotropic Silicon Etching

Данная работа посвящена исследованию процессов глубокого анизотропного травления кремния. В качестве предложенных методов были проанализированы два подхода - Bosch и Cryo. Представлено феноменологическое описание вышеупомянутых методов, проведен анализ эксперимента по криогенному травлению кремния, полученный на базе ФТИАН, также предложена аналитическая модель Cryo-процесса. This work is devoted to the study of the processes of deep anisotropic silicon etching. Two approaches (Bosch and Cryo) have been analyzed as proposed methods. The phenomenological description of the above mentioned methods has been presented, the analysis of the experiment on cryogenic etching of silicon obtained on the basis of FTIAN has been carried out, as well as an analytical model of Cryo process has been proposed.

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