SiC emitters for nanoscale vacuum electronics: A systematic study of cathode–anode gap by focused ion beam etching

2017 ◽  
Vol 35 (3) ◽  
pp. 031801 ◽  
Author(s):  
Meng Liu ◽  
Tie Li ◽  
Yuelin Wang
Keyword(s):  
Systematic Study ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beam Etching ◽  
Vacuum Electronics

Growth Mechanism and Field Emission Characteristics of GaO/GaN Nanotips Using Iodine-assisted Enhanced Focused Ion Beam Etching

2011 ◽  
Vol 7 (4) ◽  
pp. 594-597
Author(s):  
Zhan-Shuo Hu ◽  
Fei-Yi Hung ◽  
Shoou-Jinn Chang ◽  
Bohr-Ran Huang ◽  
Bo-Cheng Lin ◽  
...  
Keyword(s):  
Field Emission ◽  
Growth Mechanism ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Emission Characteristics ◽  
Ion Beam Etching

scholarly journals Focused Ion Beam Etching of GaN

1999 ◽  
Vol 4 (S1) ◽  
pp. 769-774 ◽  
Author(s):  
C. Flierl ◽  
I.H. White ◽  
M. Kuball ◽  
P.J. Heard ◽  
G.C. Allen ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Etching Rate ◽  
Side Wall ◽  
Device Fabrication ◽  
Direct Write ◽  
Ion Beam Etching ◽  
Etched Surface ◽  
A Current ◽  
Established Technique

We have investigated the use of focused ion beam (FIB) etching for the fabrication of GaN-based devices. Although work has shown that conventional reactive ion etching (RIE) is in most cases appropriate for the GaN device fabrication, the direct write facility of FIB etching – a well-established technique for optical mask repair and for IC failure analysis and repair – without the requirement for depositing an etch mask is invaluable. A gallium ion beam of about 20nm diameter was used to sputter GaN material. The etching rate depends linearly on the ion dose per area with a slope of 3.5 × 10−4 μm3/pC. At a current of 3nA, for example, this corresponds to an each rate of 1.05 μm3/s. Good etching qualities have been achieved with a side wall roughness significantly below 0.1 μm. Change in the roughness of the etched surface plane stay below 8nm.

Gas-assisted focused ion beam etching for microfabrication and inspection

1990 ◽  
Vol 11 (1-4) ◽  
pp. 409-412 ◽  
Author(s):  
R.J. Young ◽  
J.R.A. Cleaver ◽  
H. Ahmed
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beam Etching

Focused Ion Beam Etching of Nanometer-Size GaN/AlGaN Device Structures and their Optical Characterization by Micro-Photoluminescence/Raman Mapping

1999 ◽  
Vol 595 ◽  
Author(s):  
M. Kuball ◽  
M. Benyoucef ◽  
F.H. Morrissey ◽  
C.T. Foxon
Keyword(s):  
Field Effect Transistor ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Device Structure ◽  
Ion Beam Etching ◽  
Nanometer Size ◽  
Nano Fabrication ◽  
Micro Raman Spectroscopy ◽  
Device Structures ◽  
Effect Transistor

AbstractWe report on the nano-fabrication of GaN/AlGaN device structures using focused ion beam (FIB) etching, illustrated on a GaN/AlGaN heterostructure field effect transistor (HFET). Pillars as small as 20nm to 300nm in diameter were fabricated from the GaN/AlGaN HFET. Micro-photoluminescence and UV micro-Raman maps were recorded from the FIB-etched pattern to assess its material quality. Photoluminescence was detected from 300nm-size GaN/AlGaN HFET pillars, i.e., from the AlGaN as well as the GaN layers in the device structure, despite the induced etch damage. Properties of the GaN and the AlGaN layers in the FIB-etched areas were mapped using UV Micro-Raman spectroscopy. Damage introduced by FIB-etching was assessed. The fabricated nanometer-size GaN/AlGaN structures were found to be of good quality. The results demonstrate the potential of FIB-etching for the nano-fabrication of III-V nitride devices.

Nanoimprint of Glass Materials with Glassy Carbon Molds Fabricated by Focused-Ion-Beam Etching

2005 ◽  
Vol 44 (7B) ◽  
pp. 5600-5605 ◽  
Author(s):  
Masaharu Takahashi ◽  
Kohichi Sugimoto ◽  
Ryutaro Maeda
Keyword(s):  
Glassy Carbon ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beam Etching
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