scholarly journals Effect of proton irradiation dose on InAlN/GaN metal-oxide semiconductor high electron mobility transistors with Al2O3 gate oxide

Author(s):  
Shihyun Ahn ◽  
Byung-Jae Kim ◽  
Yi-Hsuan Lin ◽  
Fan Ren ◽  
Stephen J. Pearton ◽  
...  
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