Effect of proton irradiation dose on InAlN/GaN metal-oxide semiconductor high electron mobility transistors with Al2O3 gate oxide
2016 ◽
Vol 34
(5)
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pp. 051202
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2015 ◽
Vol 33
(5)
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pp. 051208
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2019 ◽
pp. 391-402
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2020 ◽
Vol 67
(5)
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pp. 1939-1945
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