Efficient and ultrafast optical modulation of on-chip thermionic emission using resonant cavity coupled electron emitters

2016 ◽  
Vol 34 (4) ◽  
pp. 041228 ◽  
Author(s):  
Fatemeh Rezaeifar ◽  
Rehan Kapadia
Keyword(s):  
Resonant Cavity ◽  
Thermionic Emission ◽  
Optical Modulation ◽  
Ultrafast Optical ◽  
Electron Emitters ◽  
On Chip

scholarly journals Carbon Nanotube Electron Sources: From Electron Beams to Energy Conversion and Optophononics

2014 ◽  
Vol 2014 ◽  
pp. 1-23 ◽  
Author(s):  
Alireza Nojeh
Keyword(s):  
Carbon Nanotubes ◽  
Field Emission ◽  
Electron Emission ◽  
Electron Beams ◽  
Thermionic Emission ◽  
Secondary Emission ◽  
Electron Sources ◽  
Field Emitters ◽  
Electron Microscopes ◽  
Electron Emitters

Carbon nanotubes have a host of properties that make them excellent candidates for electron emitters. A significant amount of research has been conducted on nanotube-based field-emitters over the past two decades, and they have been investigated for devices ranging from flat-panel displays to vacuum tubes and electron microscopes. Other electron emission mechanisms from carbon nanotubes, such as photoemission, secondary emission, and thermionic emission, have also been studied, although to a lesser degree than field-emission. This paper presents an overview of the topic, with emphasis on these less-explored mechanisms, although field-emission is also discussed. We will see that not only is electron emission from nanotubes promising for electron-source applications, but also its study could reveal unusual phenomena and open the door to new devices that are not directly related to electron beams.

Thermionic and Photon-Enhanced Emission from CVD Diamond: Influence of Nanostructure, Doping, and Substrate

2014 ◽  
Vol 95 ◽  
pp. 1-10 ◽  
Author(s):  
Tian Yin Sun ◽  
Franz A.M. Koeck ◽  
Robert J. Nemanich
Keyword(s):  
Electron Emission ◽  
Diamond Films ◽  
Thermionic Emission ◽  
Emission Spectra ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Multilayered Structures ◽  
Band Bending ◽  
Controlled Morphology ◽  
Electron Emitters

Thermionic electron emitters based on doped diamond films have shown significant emission at less than 500°C. Results have established that it is necessary to control the electron affinity, doping levels and concentration, and band bending, and these properties have been achieved with engineered multilayered structures with controlled morphology, doping and substrate. Recently, visible light photo-electron emission has been demonstrated using the same diamond film emitters. This report presents a spectroscopic and surface electron microscopy study of photo-and thermionic emission from nitrogen doped diamond films with controlled morphology on metal substrates. Electron emission spectra were recorded to 500°C, while illuminated with sub diamond band gap light. Significant photo-induced emission was observed with an efficiency greater than metal photo cathodes.

Ultrafast optical modulation of terahertz metamaterials

2011 ◽  
Vol 13 (12) ◽  
pp. 125102 ◽  
Author(s):  
Qingli Zhou ◽  
Yulei Shi ◽  
Aihua Wang ◽  
Lei Li ◽  
Dongmei Zhao ◽  
...  
Keyword(s):  
Optical Modulation ◽  
Ultrafast Optical ◽  
Terahertz Metamaterials

scholarly journals Electro-Absorption Modulation in GeSn Alloys for Wide-Spectrum Mid-Infrared Applications

2021 ◽  
Author(s):  
Yun-Da Hsieh ◽  
Jun-Han Lin ◽  
Richard Soref ◽  
Greg Sun ◽  
Hung-Hsiang Cheng ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Wide Spectrum ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Optical Modulation ◽  
Bandgap Energy ◽  
Optical Modulators ◽  
Mid Infrared ◽  
Wide Range ◽  
On Chip

Abstract Si-based electronic-photonic integrated circuits (EPICs), which are compatible with state-of-the-art complementary metal-oxide-semiconductor (CMOS) processes, offer promising opportunities for on-chip mid-infrared (MIR) photonic systems. However, the lack of efficient MIR optical modulators on Si hinders the utilization of MIR EPICs. Here, we clearly demonstrate the Franz-Keldysh (FK) effect in GeSn alloys and achieve on-Si MIR electro-absorption optical modulation using GeSn heterostructures. Our experimental and theoretical results verify that the direct bandgap energy of GeSn can be widely tuned by varying the Sn content, thereby realizing wavelength-tunable optical modulation in the MIR range with a figure-of-merit of Δα /α0 (FOM) greater than 1.5 and a broadband operating range greater than 140 nm. In contrast to conventional silicon-photonic modulators based on the plasma dispersion effect, our GeSn heterostructure demonstrates practical and effective FK MIR optical modulation on Si and helps unlock the potential of MIR EPICs for a wide range of applications.

Ultrafast Optical Modulation of Harmonic Generation in Two-Dimensional Materials

Nano Letters ◽  
2020 ◽  
Vol 20 (11) ◽  
pp. 8053-8058
Author(s):  
Yang Cheng ◽  
Hao Hong ◽  
Hui Zhao ◽  
Chunchun Wu ◽  
Yu Pan ◽  
...  
Keyword(s):  
Harmonic Generation ◽  
Optical Modulation ◽  
Two Dimensional ◽  
Ultrafast Optical ◽  
Two Dimensional Materials

Interaction-free All-optical Modulation on Chip

2017 ◽  
Author(s):  
Jia-Yang Chen ◽  
Yong Meng Sua ◽  
Zi-Tong Zhao ◽  
Mo Li ◽  
Yu-Ping Huang
Keyword(s):  
Optical Modulation ◽  
All Optical ◽  
On Chip
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