Direct observation of x-ray radiation-induced damage to SiO2/Si interface using multiwavelength room temperature photoluminescence

2016 ◽  
Vol 34 (4) ◽  
pp. 041208 ◽  
Author(s):  
Jae Hyun Kim ◽  
Je Young Park ◽  
Chang Hwan Lee ◽  
Yeo Jin Yoon ◽  
Jin San Yoo ◽  
...  
Keyword(s):  
Direct Observation ◽  
Room Temperature ◽  
X Ray ◽  
Room Temperature Photoluminescence ◽  
Radiation Induced

ROOM TEMPERATURE PHOTOLUMINESCENCE OF POLYCRYSTALLINE SIC PREPARED FROM CARBON-SATURATED SI MELT

2002 ◽  
Vol 16 (06n07) ◽  
pp. 1047-1051
Author(s):  
JIANPING MA ◽  
ZHIMING CHEN ◽  
GANG LU ◽  
MINGBIN YU ◽  
LIANMAO HANG ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Uv Light ◽  
X Ray Diffraction ◽  
X Ray ◽  
Room Temperature Photoluminescence ◽  
Composition And Structure ◽  
Light Excitation ◽  
Scanning Electron

Intense photoluminescence (PL) has been observed at room temperature from the polycrystalline SiC samples prepared from carbon-saturated Si melt at a temperature ranging from 1500 to 1650°C. Composition and structure of the samples have been confirmed by means of X-ray photoelectron spectroscopy, X-ray diffraction and scanning electron microscopy. PL measurements with 325 nm UV light excitation revealed that the room temperature PL spectrum of the samples consists of 3 luminescent bands, the peak energies of which are 2.38 eV, 2.77 eV and 3.06 eV, respectively. The 2.38 eV band is much stronger than the others. It is suggested that some extrinsic PL mechanisms associated with defect or interface states would be responsible to the intensive PL observed at room temperature.

Growth mechanism and characterization of ZnO nano-tubes synthesized using the hydrothermal-etching method

2009 ◽  
Vol 63 (6) ◽  
Author(s):  
Yan Li ◽  
Chuan-Sheng Liu ◽  
Yun-Ling Zou
Keyword(s):  
Room Temperature ◽  
Morphological Analysis ◽  
Diffraction Field ◽  
X Ray Diffraction ◽  
X Ray ◽  
Room Temperature Photoluminescence ◽  
Etching Method ◽  
Nano Rods ◽  
Two Stages

AbstractZnO nano-tubes (ZNTs) have been successfully synthesized via a simple hydrothermal-etching method, and characterized by X-ray diffraction, field emission scanning electron microscopy and room temperature photoluminescence measurement. The as-synthesized ZNTs have a diameter of 500 nm, wall thickness of 20–30 nm, and length of 5 µm. Intensity of the plane (0002) diffraction peak, compared with that of plane (10$$ \bar 1 $$0) of ZNTs, is obviously lower than that of ZnO nano-rods. This phenomenon can be caused by the smaller cross section of plane (0002) of the nano-tubes compared with that of other morphologies. On basis of the morphological analysis, the formation process of nano-tubes can be proposed in two stages: hydrothermal growth and reaction etching process.

Elektrische Leitfähigkeitsmessungen und Bestimmung des G(freie Ionen)-Wertes bei röntgenbestrahlten Flüssigkeiten verschiedener Molekularstruktur

1968 ◽  
Vol 23 (2) ◽  
pp. 126-133 ◽  
Author(s):  
Werner F. Schmidt
Keyword(s):  
Electrical Conductivity ◽  
Room Temperature ◽  
Absorbed Dose ◽  
Recombination Coefficient ◽  
Conductivity Measurements ◽  
Absorbed Dose Rate ◽  
X Ray ◽  
Free Ions ◽  
Radiation Induced

Electrical conductivity measurements were made for the determination of G (free ions) in some hydrocarbons. The radiation source was a x-ray tube operated at 55 kV. Four quantities were measured for each liquid: 1. the stationary electrical conductivity at low electric field strength during irradiation, 2. the mobilities of the radiation-induced ions, 3. the volume recombination coefficient, and 4. the absorbed dose rate.All measurements were performed with aerated liquids at room temperature. The following G-values were obtained: n-pentane 0,1; n-hexane and n-heptane 0,09; iso-octane 0,11; cyclohexane 0,06; benzene 0,07; decalin 0,04. The standard deviation was estimated to ± 25 per cent.

Phosphorus Passivation of GaAs

1998 ◽  
Vol 510 ◽  
Author(s):  
S.P. Watkins ◽  
X. Xu ◽  
J. Hu ◽  
R. Ares ◽  
P. Yeo ◽  
...  
Keyword(s):  
Room Temperature ◽  
Thin Layers ◽  
Difference Spectroscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Room Temperature Photoluminescence ◽  
Reflectance Difference Spectroscopy ◽  
Similar Chemical ◽  
Pl Intensity ◽  
Undoped Gaas

AbstractWe have performed a systematic study of the effect of various phosphorus passivation techniques on the room temperature photoluminescence (PL) intensity of undoped GaAs. The effects of passivation by two methods are compared: (1) the P-exchange reaction on exposure to tertiarybutylphosphine (TBP) vapour between 500-620°C, and (2) the growth of thin layers of GaP directly on GaAs. An x-ray diffraction technique was used to estimate the thickness of the passivating layers. Reflectance difference spectroscopy indicated a similar chemical origin for the two passivation methods. Both passivation techniques resulted in strong enhancements in the room temperature PL. PL intensity was observed to increase very rapidly with adsorbed P for both cases saturating at approximately 2 monolayers equivalent GaP coverage.

PREPARATION OF LUMINESCENT PbWO4 MICROCRYSTALS WITH HIERARCHICAL STRUCTURES BY USING MICROWAVE IRRADIATION HEATING METHOD

2010 ◽  
Vol 24 (32) ◽  
pp. 3081-3087 ◽  
Author(s):  
GENGPING WAN ◽  
GUIZHEN WANG
Keyword(s):  
Electron Microscopy ◽  
Microwave Irradiation ◽  
Room Temperature ◽  
Hierarchical Structures ◽  
X Ray Diffraction ◽  
Lead Tungstate ◽  
Heating Method ◽  
X Ray ◽  
Room Temperature Photoluminescence ◽  
Scanning Electron

Lead tungstate ( PbWO 4) microcrystals with hierarchical structures have been successfully synthesized via a facile microwave irradiation heating method. The cetyltrimethylammonium bromine (CTAB) and microwave-heated power were found to play an important role in the morphological control of resulting PbWO 4 mirocrystals. The products were characterized by the techniques of powder X-ray diffraction and field-emission scanning electron microscopy. A growth mechanism of PbWO 4 microstructures was proposed. The luminescence properties of the final products were investigated and the as-prepared PbWO 4 microcrystals displayed a very unique room-temperature photoluminescence compared to the reported results.

Comparison of room temperature photoluminescence decays in anodically oxidized crystalline and X-ray-amorphous porous silicon

1993 ◽  
Vol 57 (1-6) ◽  
pp. 105-109 ◽  
Author(s):  
E. Bustarret ◽  
I. Mihalcescu ◽  
M. Ligeon ◽  
R. Romestain ◽  
J.C. Vial ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Room Temperature ◽  
X Ray ◽  
Room Temperature Photoluminescence

EFFECT OF VANADIUM CONTENT ON PHOTOLUMINESCENCE AND MAGNETIC PROPERTIES OF DOPED ZnO THIN FILMS

2010 ◽  
Vol 24 (10) ◽  
pp. 945-951 ◽  
Author(s):  
LIWEI WANG ◽  
ZHENG XU ◽  
SULING ZHAO ◽  
LIFANG LU ◽  
FUJUN ZHANG
Keyword(s):  
Photoluminescence Spectrum ◽  
Room Temperature ◽  
Doping Concentration ◽  
Vanadium Content ◽  
X Ray Diffraction ◽  
Vanadium Concentration ◽  
X Ray ◽  
Room Temperature Photoluminescence ◽  
Room Temperature Photoluminescence Spectrum ◽  
Diffraction Patterns

ZnO : V thin films with different doping concentration (0%, 1.8%, 3.9%, 6.8%, 10%, and 13%) were fabricated by direct current magnetron sputtering. The X-ray diffraction patterns show that the wurzite structure changed with doping concentration. Furthermore, we could not find any vanadium cluster or phase separation in the X-ray diffraction patterns. The photoluminescence of ZnO : V with different vanadium concentration was investigated. The room temperature photoluminescence spectrum indicates that the films have purple band with 370 nm and the bands with 475 and 490 nm. The peak intensity of room temperature photoluminescence spectrum was affected by vanadium contents and its position remained stable. The intensity of band with 370 nm increases with raising the vanadium concentration and then decreases. The hysteresis behavior indicates that films were ferromagnetic at 50 K. Room temperature ferromagnetism was observed for the film with the doping concentration at 6.8%. However, in this case almost no hysteresis is noticeable. The results implied that the doping concentration and crystalline microstructure influence strongly the film's magnetic characteristics. Increasing the vanadium content in the film caused the degradation of the magnetic ordering.

Luminescence from SiOx Nanoclusters

1994 ◽  
Vol 358 ◽  
Author(s):  
Paul wickboldt ◽  
Hyeonsik M. Cheong ◽  
Dawen Pang ◽  
Joseph H. Chen ◽  
William paul
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Cluster Size ◽  
Radiative Recombination ◽  
Room Temperature ◽  
Broad Band ◽  
Infrared Transmission ◽  
X Ray ◽  
Room Temperature Photoluminescence ◽  
Transmission Electron

ABSTRACTSiOx nanoclusters (7 nm to 17 nm) are produced by evaporation of SiO (or Si) in Ar (+O2) atmospheres. Room temperature photoluminescence (PL) measurements in vacuum reveal a broad band centered at 1.65 eV. Upon exposure to gas this PL band is extinguished in a matter of seconds, and another band centered at 2.12 eV appears. This effect occurs regardless of the gas used (He, Ar, N2, O2, H2O vapor or air) and is entirely reversible upon evacuation.Transmission electron microscopy (TEM), Raman, infrared transmission, and X-ray photoluminescence spectroscopy (XPS) measurements are used to characterize the clusters. They are noncrystalline, and the oxidation state is a suboxide rather than SiO2 The PL spectra are independent of cluster size. The PL does not occur without sufficient oxidation and does not require the presence of bonded hydrogen. We are led to speculate that the radiative recombination occurs in electron states derived from a suboxide.

Mn, Cu Doping and Optical Properties of Highly Crystalline Ultralong ZnS Nanowires

2007 ◽  
Vol 31 ◽  
pp. 114-116 ◽  
Author(s):  
N.D. Chien ◽  
H.V. Chung ◽  
P.T. Huy ◽  
Do Jin Kim ◽  
Maurizio Ferrari
Keyword(s):  
Room Temperature ◽  
Doping Concentration ◽  
Thermal Evaporation ◽  
X Ray Diffraction ◽  
Cu Doping ◽  
Mn Doping ◽  
X Ray ◽  
Room Temperature Photoluminescence ◽  
Single Crystal Structures ◽  
Scanning Electron

Manganese (Mn) and copper (Cu) doping of ZnS nanowires was achieved by thermal evaporation of Mn, Cu doped ZnS nanopowders. Field emission scanning electron microscopy, and X-ray diffraction studies of the obtained ZnS nanowires demonstrate that the nanowires are single crystal structures and have diameters about 30-200 nm and lengths up to 1 millimeter. Room temperature photoluminescence (PL) measurements show a common PL peak around 520 nm for all ZnS nanowires samples, while impurity-related emission band are observed in doped ZnS nanowires. The dependence of the PL intensity on Mn doping concentration has also been investigated. It is shown that for high Mn doping concentration (10%) in the starting ZnS nanopowders, new emission bands (orange-red and red bands) are observed from the ZnS:Mn nanowires products. The origins of these new emission bands are discussed and brought up for further discussion.

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