Residual stress and bending strength of ZnO films deposited on polyimide sheet by RF sputtering system

2016 ◽  
Vol 34 (3) ◽  
pp. 031507 ◽  
Author(s):  
Kazuya Kusaka ◽  
Yutaka Maruoka ◽  
Tatsuya Matsue
Keyword(s):  
Residual Stress ◽  
Bending Strength ◽  
Rf Sputtering ◽  
Zno Films ◽  
Sputtering System

Effect of Substrate Temperature on Crystal Orientation and Residual Stress in RF Sputtered Gallium Nitride Films

2005 ◽  
Vol 490-491 ◽  
pp. 613-618 ◽  
Author(s):  
Kazuya Kusaka ◽  
Hanabusa Takao ◽  
Kikuo Tominaga ◽  
Noriyoshi Yamauchi
Keyword(s):  
Residual Stress ◽  
Gallium Nitride ◽  
Crystal Orientation ◽  
Substrate Surface ◽  
Rf Sputtering ◽  
Input Power ◽  
X Ray Diffraction ◽  
Micro Cracks ◽  
Increasing Temperature ◽  
Sputtering System

The crystal orientation and residual stress in gallium nitride (GaN) films deposited on a single-crystal (0001) sapphire substrate using a new sputtering system are examined through x-ray diffraction measurements as part of a study of low-temperature sputtering techniques for GaN. The new rf sputtering system has an isolated deposition chamber to prevent contamination with impurities, and is expected to produce high-purity nitride films. GaN films are deposited at various substrate temperatures and constant gas pressure and input power. This new system is found to produce GaN films with good crystal orientation, with the c-axes of GaN crystals oriented normal to the substrate surface. The crystal size of films deposited at high temperature is larger than that deposited at low Ts. All films except that deposited at 700oC exhibit compressive residual stress, and this residual stress is found to decrease with increasing temperature. Finally, the film deposited at 700 oC was tinged with white, and the surface contained numerous micro-cracks.

High rate epitaxial growth of ZnO films on sapphire by planar magnetron rf sputtering system

1978 ◽  
Vol 45 ◽  
pp. 346-349 ◽  
Author(s):  
T. Shiosaki ◽  
S. Ohnishi ◽  
Y. Murakami ◽  
A. Kawabata
Keyword(s):  
Epitaxial Growth ◽  
Rf Sputtering ◽  
High Rate ◽  
Zno Films ◽  
Planar Magnetron ◽  
Sputtering System

scholarly journals Effect of grinding residual stress on bending strength of ceramics.

1989 ◽  
Vol 38 (429) ◽  
pp. 582-588 ◽  
Author(s):  
Kenji SUZUKI ◽  
Keisuke TANAKA ◽  
Yuji YAMAMOTO ◽  
Heizaburo NAKAGAWA
Keyword(s):  
Residual Stress ◽  
Bending Strength

The Effect of Ar/O2 Ratio on Electrochromic Response Time of Ni Oxides Grown Using an RF Sputtering System

2002 ◽  
Vol 41 (Part 2, No. 2B) ◽  
pp. L212-L215 ◽  
Author(s):  
Kwang-Soon Ahn ◽  
Yoon-Chae Nah ◽  
Jun-Ho Yum ◽  
Yung-Eun Sung
Keyword(s):  
Response Time ◽  
Rf Sputtering ◽  
Sputtering System
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