Determination of the depletion layer width and effects on the formation of double-2DEG in AlGaAs/GaAs heterostructures

2016 ◽  
Vol 34 (2) ◽  
pp. 02L110 ◽  
Author(s):  
Irving Eduardo Cortes-Mestizo ◽  
Leticia Ithsmel Espinosa-Vega ◽  
Jose Angel Espinoza-Figueroa ◽  
Alejandro Cisneros-de-la-Rosa ◽  
Eric Eugenio-Lopez ◽  
...  
Keyword(s):  
Depletion Layer ◽  
Layer Width ◽  
Depletion Layer Width

Ferroelectric resistance switching in Pt/Fe/BiFeO3/SrRuO3/SrTiO3 heterostructures

2020 ◽  
Vol 22 (23) ◽  
pp. 13277-13284
Author(s):  
Wanchao Zheng ◽  
Yuchen Wang ◽  
Chao Jin ◽  
Ruihua Yin ◽  
Dong Li ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Resistance Switching ◽  
Depletion Layer ◽  
Switching Behavior ◽  
Ferroelectric Polarization ◽  
Resistive Switching Behavior ◽  
Layer Width ◽  
Depletion Layer Width

The resistive switching behavior in the Pt/Fe/BiFeO3/SrRuO3 heterostructures was observed. It results from the ferroelectric polarization modulated the depletion layer width around the BiFeO3/SrRuO3 interface.

Leakage Currents in P-Channel Accumulation Mode Tft's

1985 ◽  
Vol 53 ◽  
Author(s):  
B.A. Khan ◽  
T. Marshall ◽  
E. Arnold ◽  
R. Pandya
Keyword(s):  
Thin Films ◽  
Doping Concentration ◽  
Depletion Layer ◽  
Dramatic Reduction ◽  
Leakage Currents ◽  
Layer Width ◽  
Accumulation Mode ◽  
Poly Silicon ◽  
Depletion Layer Width ◽  
Silicon Thin Films

ABSTRACTWe have fabricated accumulation mode MOSFETS in poly-silicon thin films and studied the effect of passivation of the leakage currents in these devices. We have used C-V measurements ot determine the effective doping concentration and depletion layer widths in the passivated and unpassivated devices. We find that passivation reduces the effective doping concentration and therefore increases the depletion layer width. Although this change in effective doping concentration is small (less thean a factor of 2), the increase in depletion layer width is sufficient to pinch off the passivated device but not the unpassivated one. This leads to the dramatic reduction in leakage currents after passivation.

Regulation of depletion layer width in Pb(Zr,Ti)O3/Nb:SrTiO3 heterostructures

2018 ◽  
Vol 51 (20) ◽  
pp. 205303 ◽  
Author(s):  
Yu Bai ◽  
Zhan Jie Wang ◽  
Jian Zhong Cui ◽  
Zhi Dong Zhang
Keyword(s):  
Depletion Layer ◽  
Layer Width ◽  
Depletion Layer Width

Evaluation of depletion layer width and gas-sensing properties of antimony-doped tin oxide thin film sensors

2015 ◽  
Vol 220 ◽  
pp. 1354-1360 ◽  
Author(s):  
Jianqiao Liu ◽  
Xuesong Liu ◽  
Zhaoxia Zhai ◽  
Guohua Jin ◽  
Qiuxuan Jiang ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Gas Sensing ◽  
Depletion Layer ◽  
Oxide Thin Film ◽  
Layer Width ◽  
Sensing Properties ◽  
Depletion Layer Width ◽  
Thin Film Sensors ◽  
Gas Sensing Properties

Control of depletion layer width via amount of AuNPs for sensor response enhancement in ZnO nanostructure sensor

2012 ◽  
Vol 171-172 ◽  
pp. 230-237 ◽  
Author(s):  
Ekasiddh Wongrat ◽  
Niyom Hongsith ◽  
Duangmanee Wongratanaphisan ◽  
Atcharawon Gardchareon ◽  
Supab Choopun
Keyword(s):  
Sensor Response ◽  
Depletion Layer ◽  
Layer Width ◽  
Zno Nanostructure ◽  
Depletion Layer Width ◽  
Response Enhancement
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