scholarly journals Plasma-assisted oxide removal from p-type GaSb for low resistivity ohmic contacts

2015 ◽  
Vol 33 (6) ◽  
pp. 061210 ◽  
Author(s):  
Thanh-Nam Tran ◽  
Saroj Kumar Patra ◽  
Magnus Breivik ◽  
Bjørn-Ove Fimland
Keyword(s):  
Ohmic Contacts ◽  
Low Resistivity ◽  
Oxide Removal ◽  
P Type

scholarly journals Formation Mechanisms of Low-Resistivity Ni∕Pt Ohmic Contacts to Li-Doped p-Type ZnO

2009 ◽  
Vol 12 (3) ◽  
pp. H60 ◽  
Author(s):  
Y. F. Lu ◽  
Z. Z. Ye ◽  
Y. J. Zeng ◽  
L. P. Zhu ◽  
J. Y. Huang ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Formation Mechanisms ◽  
Low Resistivity ◽  
P Type

Low-resistivity Ni/Pt Ohmic contacts to p-type N-doped ZnO

2010 ◽  
Vol 54 (7) ◽  
pp. 732-735 ◽  
Author(s):  
Y.F. Lu ◽  
Z.Z. Ye ◽  
Y.J. Zeng ◽  
L.P. Zhu ◽  
J.Y. Huang ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Low Resistivity ◽  
Doped Zno ◽  
P Type

Low-resistivity Au∕Ni Ohmic contacts to Sb-doped p-type ZnO

2007 ◽  
Vol 90 (25) ◽  
pp. 252103 ◽  
Author(s):  
L. J. Mandalapu ◽  
Z. Yang ◽  
J. L. Liu
Keyword(s):  
Ohmic Contacts ◽  
Low Resistivity ◽  
P Type

VERY LOW RESISTIVITY AuMn GATE OHMIC CONTACTS FOR GaInAs DIFFUSED JFETs

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-453-C4-456 ◽  
Author(s):  
P. E. HALLALI ◽  
P. BLANCONNIER ◽  
L. BRICARD ◽  
J-C. RENAUD
Keyword(s):  
Ohmic Contacts ◽  
Low Resistivity

Thermodynamics and Microstructure Development in the Thin Film Reaction of Aluminum on Silicon Carbide

1995 ◽  
Vol 403 ◽  
Author(s):  
T. S. Hayes ◽  
F. T. Ray ◽  
K. P. Trumble ◽  
E. P. Kvam
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Microstructure Development ◽  
P Type ◽  
Microstructural Studies

AbstractA refined thernodynamic analysis of the reaction between molen Al and SiC is presented. The calculations indicate much higher Si concentrations for saturation with respect to AkC 3 formation than previously reported. Preliminary microstructural studies confirm the formation of interfacial A14C3 for pure Al thin films on SiC reacted at 9000C. The implications of the calculations and experimental observations for the production of ohmic contacts to p-type SiC are discussed.

Correlation between the electrical properties and the interfacial microstructures of TiAl-based ohmic contacts to p-type 4H-SiC

2004 ◽  
Vol 33 (5) ◽  
pp. 460-466 ◽  
Author(s):  
S. Tsukimoto ◽  
K. Nitta ◽  
T. Sakai ◽  
M. Moriyama ◽  
Masanori Murakami
Keyword(s):  
Electrical Properties ◽  
Ohmic Contacts ◽  
P Type

Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport

2014 ◽  
Vol 806 ◽  
pp. 57-60
Author(s):  
Nicolas Thierry-Jebali ◽  
Arthur Vo-Ha ◽  
Davy Carole ◽  
Mihai Lazar ◽  
Gabriel Ferro ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Ohmic Contacts ◽  
Schottky Barrier Height ◽  
Annealing Temperature ◽  
Process Condition ◽  
Specific Contact Resistance ◽  
High Doping Level ◽  
Annealing Temperatures ◽  
Specific Contact ◽  
P Type

This work reports on the improvement of ohmic contacts made on heavily p-type doped 4H-SiC epitaxial layer selectively grown by Vapor-Liquid-Solid (VLS) transport. Even before any annealing process, the contact is ohmic. This behavior can be explained by the high doping level of the VLS layer (Al concentration > 1020 cm-3) as characterized by SIMS profiling. Upon variation of annealing temperatures, a minimum value of the Specific Contact Resistance (SCR) down to 1.3x10-6 Ω.cm2 has been obtained for both 500 °C and 800 °C annealing temperature. However, a large variation of the SCR was observed for a same process condition. This variation is mainly attributed to a variation of the Schottky Barrier Height.

Selective Area Deposition of Passivants, Insulators, and Epitaxial Films of II-VI Compound Semiconductors

1989 ◽  
Vol 161 ◽  
Author(s):  
D.L. Dreifus ◽  
Y. Lansari ◽  
J.W. Han ◽  
S. Hwang ◽  
J.W. Cook ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Epitaxial Films ◽  
Semiconductor Surface ◽  
Epitaxial Layers ◽  
Double Crystal ◽  
Surface Areas ◽  
Selective Area ◽  
Lift Off ◽  
P Type ◽  
Area Deposition

ABSTRACTII-VI semiconductor surface passivants, insulators, and epitaxial films have been deposited onto selective surface areas by employing a new masking and lift-off technique. The II-VI layers were grown by either conventional or photoassisted molecular beam epitaxy (MBE). CdTe has been selectively deposited onto HgCdTe epitaxial layers as a surface passivant. Selective-area deposition of ZnS has been used in metal-insulator-semiconductor (MIS) structures. Low resistance ohmic contacts to p-type CdTe:As have also been realized through the use of selectively-placed thin films of the semi-metal HgTe followed by a thermal evaporation of In. Epitaxial layers of HgTe, HgCdTe, and HgTe-CdTe superlattices have also been grown in selective areas on CdZnTe substrates, exhibiting specular morphologies and double-crystal x-ray diffraction rocking curves (DCXD) with full widths at half maximum (FWHMs) as narrow as 140 arcseconds.

The Effect of Heat Treatment on Ni/Au Ohmic Contacts to p-Type GaN

1999 ◽  
Vol 176 (1) ◽  
pp. 773-777 ◽  
Author(s):  
Li-Chien Chen ◽  
Jin-Kuo Ho ◽  
Fu-Rong Chen ◽  
Ji-Jung Kai ◽  
Li Chang ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Ohmic Contacts ◽  
P Type
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