Selective area epitaxy of monolithic white-light InGaN/GaN quantum well microstripes with dual color emission

2015 ◽  
Vol 33 (5) ◽  
pp. 05E102 ◽  
Author(s):  
Yuejing Li ◽  
Yuying Tong ◽  
Guofeng Yang ◽  
Chujun Yao ◽  
Rui Sun ◽  
...  
Keyword(s):  
Quantum Well ◽  
White Light ◽  
Selective Area Epitaxy ◽  
Selective Area ◽  
Dual Color ◽  
Color Emission

White-light emission from InGaN/GaN quantum well microrings grown by selective area epitaxy

2016 ◽  
Vol 4 (1) ◽  
pp. 17 ◽  
Author(s):  
Guofeng Yang ◽  
Peng Chen ◽  
Shumei Gao ◽  
Guoqing Chen ◽  
Rong Zhang ◽  
...  
Keyword(s):  
Quantum Well ◽  
White Light ◽  
Light Emission ◽  
White Light Emission ◽  
Selective Area Epitaxy ◽  
Selective Area

Erratum: GaAs/AlGaAs multiple quantum well pin diodes grown by selective area epitaxy

1988 ◽  
Vol 24 (17) ◽  
pp. 1117
Author(s):  
D.A. Roberts ◽  
J.P.R. David ◽  
G. Hill ◽  
P.A. Houston ◽  
M.A. Pate ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Pin Diodes ◽  
Selective Area Epitaxy ◽  
Selective Area

Diverse facets of InGaN quantum well microrings grown by selective area epitaxy

2009 ◽  
Vol 105 (12) ◽  
pp. 123524 ◽  
Author(s):  
Wen Feng ◽  
Vladimir V. Kuryatkov ◽  
Dana M. Rosenbladt ◽  
Nenad Stojanovic ◽  
Sergey A. Nikishin ◽  
...  
Keyword(s):  
Quantum Well ◽  
Selective Area Epitaxy ◽  
Selective Area

Dual-color emitting quantum-dot-quantum-well CdSe-ZnS heteronanocrystals hybridized on InGaN∕GaN light emitting diodes for high-quality white light generation

2008 ◽  
Vol 92 (11) ◽  
pp. 113110 ◽  
Author(s):  
Sedat Nizamoglu ◽  
Evren Mutlugun ◽  
Tuncay Özel ◽  
Hilmi Volkan Demir ◽  
Sameer Sapra ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
White Light ◽  
Light Emitting Diodes ◽  
High Quality ◽  
Light Emitting ◽  
Dual Color ◽  
White Light Generation ◽  
Light Generation

Mechanisms in embedded selective epitaxy and overgrowth of an integrated laser/modulator quantum well structure using MOMBE and MOVPE

2000 ◽  
Vol 648 ◽  
Author(s):  
Philipp Kröner ◽  
Horst Baumeister ◽  
Roland Gessner ◽  
Josef Rieger ◽  
Michael Schier ◽  
...  
Keyword(s):  
Quantum Well ◽  
Growth Parameters ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Selective Area Epitaxy ◽  
Organic Vapor ◽  
Selective Area ◽  
Metal Organic ◽  
Modulator Structure ◽  
Butt Coupling

AbstractLateral integration of optoelectronic devices comprising strained multiple quantum well (MQW) structures can most successfully be accomplished by selective area epitaxy using metal organic molecular beam epitaxy (MOMBE). We optimized the growth parameters with respect to a planar butt coupling and sharp, flat MQW interfaces in an integrated MQW laser / MQW modulator structure. Defect generation in metal organic vapor phase epitaxy (MOVPE) overgrown cladding layers is analyzed and shown to contain information about the quality of the buried butt coupling. A ridge waveguide structure has successfully been fabricated from an optimized integrated laser / modulator structure.

GaAs/AlGaAs multiple quantum well pin diodes grown by selective area epitaxy

1988 ◽  
Vol 24 (14) ◽  
pp. 896
Author(s):  
D.A. Roberts ◽  
J.P.R. David ◽  
G. Hill ◽  
P.A. Houston ◽  
M.A. Pate ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Pin Diodes ◽  
Selective Area Epitaxy ◽  
Selective Area
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