Atomic layer deposition grown MOx thin films for solar water splitting: Prospects and challenges

2015 ◽  
Vol 33 (1) ◽  
pp. 010801 ◽  
Author(s):  
Trilok Singh ◽  
Thomas Lehnen ◽  
Tessa Leuning ◽  
Sanjay Mathur
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Water Splitting ◽  
Atomic Layer ◽  
Solar Water ◽  
Solar Water Splitting ◽  
Layer Deposition

Atomic layer deposition of materials for solar water splitting

2021 ◽  
pp. 363-380
Author(s):  
Rodrigo Savio Pessoa ◽  
William Chiappim Junior ◽  
Mariana Amorim Fraga
Keyword(s):  
Atomic Layer Deposition ◽  
Water Splitting ◽  
Atomic Layer ◽  
Solar Water ◽  
Solar Water Splitting ◽  
Layer Deposition

Growth of p-Type Hematite by Atomic Layer Deposition and Its Utilization for Improved Solar Water Splitting

2012 ◽  
Vol 134 (12) ◽  
pp. 5508-5511 ◽  
Author(s):  
Yongjing Lin ◽  
Yang Xu ◽  
Matthew T. Mayer ◽  
Zachary I. Simpson ◽  
Gregory McMahon ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Water Splitting ◽  
Atomic Layer ◽  
Solar Water ◽  
Solar Water Splitting ◽  
Layer Deposition ◽  
P Type

Low-Temperature Atomic Layer Deposition of Crystalline and Photoactive Ultrathin Hematite Films for Solar Water Splitting

ACS Nano ◽  
2015 ◽  
Vol 9 (12) ◽  
pp. 11775-11783 ◽  
Author(s):  
Ludmilla Steier ◽  
Jingshan Luo ◽  
Marcel Schreier ◽  
Matthew T. Mayer ◽  
Timo Sajavaara ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Water Splitting ◽  
Atomic Layer ◽  
Solar Water ◽  
Solar Water Splitting ◽  
Layer Deposition

Transparent ALD-grown Ta2O5 protective layer for highly stable ZnO photoelectrode in solar water splitting

2015 ◽  
Vol 51 (34) ◽  
pp. 7290-7293 ◽  
Author(s):  
Chengcheng Li ◽  
Tuo Wang ◽  
Zhibin Luo ◽  
Dong Zhang ◽  
Jinlong Gong
Keyword(s):  
Atomic Layer Deposition ◽  
Water Splitting ◽  
Protective Layer ◽  
Atomic Layer ◽  
Strong Base ◽  
Solar Water ◽  
Solar Water Splitting ◽  
Protective Layers ◽  
Layer Deposition ◽  
Excellent Stability

This communication describes the design of a highly stable ZnO/Ta2O5 photoanode with ultrathin Ta2O5 protective layers deposited by atomic layer deposition. The transparency of Ta2O5 to sunlight accounts for the excellent stability of the photoelectrode in a strong base environment.

ChemInform Abstract: Growth of p-Type Hematite by Atomic Layer Deposition and Its Utilization for Improved Solar Water Splitting.

ChemInform ◽  
2012 ◽  
Vol 43 (30) ◽  
pp. no-no
Author(s):  
Yongjing Lin ◽  
Yang Xu ◽  
Matthew T. Mayer ◽  
Zachary I. Simpson ◽  
Gregory McMahon ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Water Splitting ◽  
Atomic Layer ◽  
Solar Water ◽  
Solar Water Splitting ◽  
Layer Deposition ◽  
P Type

scholarly journals Tantalum nitride films integrated with transparent conductive oxide substrates via atomic layer deposition for photoelectrochemical water splitting

2016 ◽  
Vol 7 (11) ◽  
pp. 6760-6767 ◽  
Author(s):  
Hamed Hajibabaei ◽  
Omid Zandi ◽  
Thomas W. Hamann
Keyword(s):  
Atomic Layer Deposition ◽  
Water Splitting ◽  
Atomic Layer ◽  
Transparent Conductive Oxide ◽  
Photoelectrochemical Water Splitting ◽  
Tantalum Nitride ◽  
Solar Water Splitting ◽  
Layer Deposition ◽  
Oxide Substrates ◽  
Conductive Oxide

The first example of tantalum nitride electrodes on transparent conductive oxide substrates, which enables solar water splitting, is presented.

One-Dimensional TiO2@GaON Core-Shell Nanowires with Controlled Shell Thickness from Atomic Layer Deposition for Stable and Efficient Photoelectrochemical Water Splitting

2019 ◽  
Author(s):  
Jiajia Tao ◽  
Hong-Ping Ma ◽  
Kaiping Yuan ◽  
Yang Gu ◽  
Jianwei Lian ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Band Gap ◽  
Water Splitting ◽  
Atomic Layer ◽  
Photoelectrochemical Water Splitting ◽  
Core Shell ◽  
Photoelectrochemical Performance ◽  
Highly Efficient ◽  
Layer Deposition ◽  
Shell Nanowires

<div>As a promising oxygen evolution reaction semiconductor, TiO2 has been extensively investigated for solar photoelectrochemical water splitting. Here, a highly efficient and stable strategy for rationally preparing GaON cocatalysts on TiO2 by atomic layer deposition is demonstrated, which we show significantly enhances the</div><div>photoelectrochemical performance compared to TiO2-based photoanodes. For TiO2@20 nm-GaON core-shell nanowires a photocurrent density up to 1.10 mA cm-2 (1.23 V vs RHE) under AM 1.5 G irradiation (100 mW cm-2) has been achieved, which is 14 times higher than that of TiO2 NWs. Furthermore, the oxygen vacancy formation on GaON as well as the band gap matching with TiO2 not only provides more active sites for water oxidation but also enhances light absorption to promote interfacial charge separation and migration. Density functional theory studies of model systems of GaON-modified TiO2 confirm the band gap reduction, high reducibility and ability to activate water. The highly efficient and stable systems of TiO2@GaON core-shell nanowires provide a deeper understanding and universal strategy for enhancing photoelectrochemical performance of photoanodes now available. </div>

Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Atomic Layer ◽  
Electric Properties ◽  
X Ray Diffraction ◽  
Layer Deposition ◽  
Azo Thin Film ◽  
Aluminum Doped Zinc Oxide ◽  
Conductive Thin Films

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

scholarly journals Fabrication of GdxFeyOz films using an atomic layer deposition-type approach

CrystEngComm ◽  
2021 ◽  
Author(s):  
Pengmei Yu ◽  
Sebastian M. J. Beer ◽  
Anjana Devi ◽  
Mariona Coll
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Complex Oxide ◽  
Oxide Thin Films ◽  
Layer Deposition ◽  
Atomic Precision

The growth of complex oxide thin films with atomic precision offers bright prospects to study improved properties and novel functionalities.

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