Role of atomic layer deposited aluminum oxide as oxidation barrier for silicon based materials

2015 ◽  
Vol 33 (1) ◽  
pp. 01A142 ◽  
Author(s):  
Giuseppe Fiorentino ◽  
Bruno Morana ◽  
Salvatore Forte ◽  
Pasqualina Maria Sarro
Keyword(s):  
Aluminum Oxide ◽  
Atomic Layer ◽  
Silicon Based

scholarly journals Direct Atomic Layer Deposition of Ultrathin Aluminum Oxide on Monolayer MoS 2 Exfoliated on Gold: The Role of the Substrate

2021 ◽  
pp. 2101117
Author(s):  
Emanuela Schilirò ◽  
Raffaella Lo Nigro ◽  
Salvatore E. Panasci ◽  
Simonpietro Agnello ◽  
Marco Cannas ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Aluminum Oxide ◽  
Atomic Layer ◽  
Layer Deposition

Improving the photodetection and stability of a visible-light QDs/ZnO phototransistor via an Al2O3 additional layer

2021 ◽  
Author(s):  
Sungho Park ◽  
Byung Jun Kim ◽  
Tae Yeon Kim ◽  
Eui Young Jung ◽  
Kyu-Myung Lee ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Quantum Dot ◽  
Aluminum Oxide ◽  
Thin Layer ◽  
Visible Light ◽  
Atomic Layer ◽  
Zno Films ◽  
Additional Layer ◽  
Layer Deposition

We have developed a visible-light phototransistor with excellent photodetection characteristics and stability via atomic layer deposition (ALD) to add a thin layer of aluminum oxide (Al2O3) to quantum dot (QD)/zinc oxide (ZnO) films.

A first-principles study of the atomic layer deposition of ZnO on carboxyl functionalized carbon nanotubes: the role of water molecules

2021 ◽  
Vol 23 (5) ◽  
pp. 3467-3478
Author(s):  
J. I. Paez-Ornelas ◽  
H. N. Fernández-Escamilla ◽  
H. A. Borbón-Nuñez ◽  
H. Tiznado ◽  
Noboru Takeuchi ◽  
...  
Keyword(s):  
First Principles ◽  
Ligand Exchange ◽  
Functional Group ◽  
Atomic Layer ◽  
High Reactivity ◽  
Water Molecules ◽  
Exchange Reactions ◽  
Layer Deposition ◽  
The Right

Atomic description of ALD in systems that combine large surface area and high reactivity is key for selecting the right functional group to enhance the ligand-exchange reactions.

Molecular beam epitaxial growth of gallium nitride nanowires on atomic layer deposited aluminum oxide

2011 ◽  
Vol 334 (1) ◽  
pp. 113-117 ◽  
Author(s):  
Kevin Goodman ◽  
Vladimir Protasenko ◽  
Jai Verma ◽  
Tom Kosel ◽  
Grace Xing ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Aluminum Oxide ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Tuning the Composition and Nanostructure of Pt/Ir Films via Anodized Aluminum Oxide Templated Atomic Layer Deposition

2010 ◽  
Vol 20 (18) ◽  
pp. 3099-3105 ◽  
Author(s):  
David J. Comstock ◽  
Steven T. Christensen ◽  
Jeffrey W. Elam ◽  
Michael J. Pellin ◽  
Mark C. Hersam
Keyword(s):  
Atomic Layer Deposition ◽  
Aluminum Oxide ◽  
Atomic Layer ◽  
Anodized Aluminum ◽  
Anodized Aluminum Oxide ◽  
Layer Deposition

Atomic layer deposition of ternary ruthenates by combining metalorganic precursors with RuO4 as the co-reactant

2021 ◽  
Author(s):  
Matthias Marcus Minjauw ◽  
Ji-Yu Feng ◽  
Timo Sajavaara ◽  
Christophe Detavernier ◽  
Jolien Dendooven
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Ruthenium Tetroxide ◽  
Layer Deposition

In this work, the use of ruthenium tetroxide (RuO4) as a co-reactant for atomic layer deposition (ALD) is reported. The role of RuO4 as a co-reactant is twofold: it acts...

scholarly journals MEMs from the Nanoscale Up

2007 ◽  
Vol 129 (03) ◽  
pp. 24-29 ◽  
Author(s):  
Arthur C. Ratzel
Keyword(s):  
Leading Edge ◽  
Consumer Products ◽  
Mems Devices ◽  
Science And Engineering ◽  
Gas Damping ◽  
High Shock ◽  
Mems Technology ◽  
Silicon Based ◽  
Development Laboratory

This article discusses growing role of silicon micro-electron-mechanical systems (MEMS) technology in automotive and consumer products, telecommunications, radio-frequency applications, and medical care. The article also highlights that silicon-based MEMS devices must be constructed in clean rooms, such as one at Sandia's Microelectronics Development laboratory. According to engineers, the search for an in-depth understanding of wear mechanisms in dynamic silicon MEMS is expected to drive an ambitious wave of leading-edge research into microscale science and engineering, distinct from that which prevailed at the mesoscale. It has been found that gas damping between MEMS structures and the substrate, within the sealed package, can cause serious nonlinearities. While this doesn't lead to failure in the classic sense, it may make it harder to close a switch. On the plus side, gas damping can provide a cushion that enables a MEMS device to survive surprisingly high shock loads.

Sign in / Sign up

Export Citation Format

Share Document