Effect of UV curing time on physical and electrical properties and reliability of low dielectric constant materials

2014 ◽  
Vol 32 (6) ◽  
pp. 061514 ◽  
Author(s):  
Kai-Chieh Kao ◽  
Wei-Yuan Chang ◽  
Yu-Min Chang ◽  
Jihperng Leu ◽  
Yi-Lung Cheng
Keyword(s):  
Dielectric Constant ◽  
Electrical Properties ◽  
Uv Curing ◽  
Low Dielectric Constant ◽  
Curing Time ◽  
Low Dielectric ◽  
Low Dielectric Constant Materials

Effect of moisture on electrical properties and reliability of low dielectric constant materials

2014 ◽  
Vol 114 ◽  
pp. 12-16 ◽  
Author(s):  
Yi-Lung Cheng ◽  
Ka-Wai Leon ◽  
Jun-Fu Huang ◽  
Wei-Yuan Chang ◽  
Yu-Min Chang ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Electrical Properties ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Low Dielectric Constant Materials ◽  
Effect Of Moisture

Curing Process Window and Thermal Stability of Porous MSQ-Based Low-Dielectric-Constant Materials

2004 ◽  
Vol 151 (6) ◽  
pp. F146 ◽  
Author(s):  
Shou-Yi Chang ◽  
Tzu-Jen Chou ◽  
Yung-Cheng Lu ◽  
Syun-Ming Jang ◽  
Su-Jien Lin ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Process Window ◽  
Curing Process ◽  
Low Dielectric ◽  
Low Dielectric Constant Materials ◽  
Thermal Stability Of

Electrical properties of low-dielectric-constant films prepared by PECVD in O2/CH4/HMDSO

2002 ◽  
Vol 5 (2-3) ◽  
pp. 279-284 ◽  
Author(s):  
G Borvon ◽  
A Goullet ◽  
X Mellhaoui ◽  
N Charrouf ◽  
A Granier
Keyword(s):  
Dielectric Constant ◽  
Electrical Properties ◽  
Low Dielectric Constant ◽  
Low Dielectric

Low Dielectric Constant Materials for IC Intermetal Dielectric Applications: A Status Report on the Leading Candidates

1996 ◽  
Vol 443 ◽  
Author(s):  
Neil H. Hendricks
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Process Integration ◽  
Electrical Performance ◽  
Low Dielectric Constant ◽  
Status Report ◽  
Structure Property ◽  
Chemical Structures ◽  
Low Dielectric ◽  
Low Dielectric Constant Materials

AbstractFor over two years, intensive efforts at SEMATECH and elsewhere have focused on identifying low dielectric constant (low ε) materials which possess all of the required properties and processing characteristics needed for integration into standard IC fabrication lines. To date, no material candidate has been shown to satisfy this impressive list of requirements. For some candidates, drawbacks related to material properties such as poor thermal stability or electrical performance have been identified; in other cases, problems in process integration, for example difficulties in patterning have stalled progress.In this paper, most of the current leading candidates for the low ε IC IMC application are identified and discussed. An attempt is made to correlate structure/property relationships in these materials with their relative attributes and deficiencies as they relate to the IMD application. Key differences in chemistry and property/processing characteristics are contrasted for low c silicon-oxygen polymers and for purely organic polymers. Novel dielectrics such as porous organic and inorganic thin films are also discussed in terms of their properties and associated process integration challenges. Since the needs for global planarization and low c IMD are occurring within roughly the same generation of minimum feature size (˜ 0.25 μm), the chemical mechanical polishing (CMP) of low dielectric constant thin films and/or of SiO2 layers deposited above them is briefly discussed. Both subtractive metalization and damascene processes are included, and the required low dielectric constant film properties and processing characteristics are contrasted for each process. Finally, the author's views on future trends in low dielectric constant materials development are presented, with an emphasis on identifying the types of chemical structures which may prove viable for this most demanding of all polymer film applications.

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