Deep ultraviolet photopumped stimulated emission from partially relaxed AlGaN multiple quantum well heterostructures grown on sapphire substrates

2014 ◽  
Vol 32 (6) ◽  
pp. 061204 ◽  
Author(s):  
Fatima Asif ◽  
Mohamed Lachab ◽  
Antwon Coleman ◽  
Iftikhar Ahmad ◽  
Bin Zhang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Stimulated Emission ◽  
Multiple Quantum ◽  
Sapphire Substrates ◽  
Deep Ultraviolet

scholarly journals Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates

2014 ◽  
Vol 105 (14) ◽  
pp. 141106 ◽  
Author(s):  
Xiao-Hang Li ◽  
Theeradetch Detchprohm ◽  
Tsung-Ting Kao ◽  
Md. Mahbub Satter ◽  
Shyh-Chiang Shen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Stimulated Emission ◽  
Quantum Well Lasers ◽  
Multiple Quantum ◽  
Sapphire Substrates ◽  
Low Threshold

Stimulated-emission spectra of high-indium-content InGaN/GaN multiple-quantum-well structures

2000 ◽  
Vol 77 (23) ◽  
pp. 3758-3760 ◽  
Author(s):  
Chii-Chang Chen ◽  
Hui-Wen Chuang ◽  
Gou-Chung Chi ◽  
Chang-Cheng Chuo ◽  
Jen-Inn Chyi
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Emission Spectra ◽  
Indium Content ◽  
Stimulated Emission ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
High Indium Content

Deep ultraviolet lasing from AlGaN multiple-quantum-well structures

2015 ◽  
Vol 13 (5-6) ◽  
pp. 228-231 ◽  
Author(s):  
Jianchang Yan ◽  
Yingdong Tian ◽  
Xiang Chen ◽  
Yun Zhang ◽  
Junxi Wang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Deep Ultraviolet

Optical Properties of InGaN/GaN Multiple Quantum Well Structures Grown on GaN and Sapphire Substrates

2020 ◽  
Vol 67 (6) ◽  
pp. 974-977
Author(s):  
Vitezslav Jary ◽  
Alice Hospodkova ◽  
Tomas Hubacek ◽  
Frantisek Hajek ◽  
Karel Blazek ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Sapphire Substrates

Quantum shift of band-edge stimulated emission in InGaN–GaN multiple quantum well light-emitting diodes

1997 ◽  
Vol 70 (22) ◽  
pp. 2978-2980 ◽  
Author(s):  
C. J. Sun ◽  
M. Zubair Anwar ◽  
Q. Chen ◽  
J. W. Yang ◽  
M. Asif Khan ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Stimulated Emission ◽  
Band Edge ◽  
Multiple Quantum ◽  
Light Emitting

scholarly journals Deep-Ultraviolet Emitting AlGaN Multiple Quantum Well Graded-Index Separate-Confinement Heterostructures Grown by MBE on SiC Substrates

2017 ◽  
Vol 9 (4) ◽  
pp. 1-9 ◽  
Author(s):  
Haiding Sun ◽  
Jian Yin ◽  
Emanuele Francesco Pecora ◽  
Luca Dal Negro ◽  
Roberto Paiella ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Graded Index ◽  
Deep Ultraviolet

Stimulated emission at 272 nm from an AlxGa1−xN-based multiple-quantum-well laser with two-step etched facets

RSC Advances ◽  
2016 ◽  
Vol 6 (55) ◽  
pp. 50245-50249 ◽  
Author(s):  
Yingdong Tian ◽  
Yun Zhang ◽  
Jianchang Yan ◽  
Xiang Chen ◽  
Junxi Wang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Multiple Quantum Well ◽  
Stimulated Emission ◽  
Lower Threshold ◽  
Multiple Quantum ◽  
Optically Pumped ◽  
Quantum Well Laser ◽  
Cleaved Facets ◽  
Multiple Quantum Well Laser

We demonstrate an optically pumped AlGaN-based laser at 272 nm with two-step etched facets. Compared with a laser with cleaved facets, the laser with etched facets had a lower threshold and higher differential quantum efficiency.

Sign in / Sign up

Export Citation Format

Share Document