scholarly journals Modeling precursor diffusion and reaction of atomic layer deposition in porous structures

2015 ◽  
Vol 33 (1) ◽  
pp. 01A104 ◽  
Author(s):  
Thomas Keuter ◽  
Norbert Heribert Menzler ◽  
Georg Mauer ◽  
Frank Vondahlen ◽  
Robert Vaßen ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Porous Structures ◽  
Layer Deposition

Surface Engineering Through Atomic Layer Deposition on Three-Dimensionally Structured Materials

2020 ◽  
Author(s):  
Nhi V. Quach ◽  
Quang N. Pham ◽  
Ju-Hwan Han ◽  
Youngjoon Suh ◽  
Jin-Seong Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Porous Media ◽  
Atomic Layer Deposition ◽  
Flat Surface ◽  
Atomic Layer ◽  
Surface Modifications ◽  
Inverse Opal ◽  
Porous Structures ◽  
Layer Deposition

Abstract Atomic layer deposition (ALD) is effective in depositing conformal thin films, which is highly favorable for coating various patterned surfaces. These coatings serve as barrier layers in addition to surface modifications to improve wettability of porous structures, such as meshes and membrane channels. However, it has been challenging to conformally deposit hydrophilic thin films on three-dimensionally (3D) designed, more complicated architectures. To understand the effect of surface modifications on 3D structures’ surface properties, we deposit thin silica films via ALD on hydrophobic porous media, which is nickel inverse opal structures in this case. The silica thin film is used to improve hydrophilicity without modifying the geometries of the microporous structure such as porosity, pore size, and metal type. We study the consequences of applying silica coatings to the 3D structure in comparison to flat surface counterpart. The hydrophilicity effects of ALD coating on porous structures and flat nickel surfaces are approximately the same with a result of decreasing apparent static contact angle of approximately 30°. In relation, the Fowkes method reveals the surface energy of the ALD silica samples increases by a factor of 1.3. Thermal stability of the coating is tested, revealing a relative degradation with increasing thermal cycling, most likely associated with the adsorption species on the thin film surface. The droplet spreading rate is analyzed in addition to droplet volume loss to estimate the liquid penetration rate into the structure, if any. Condensation rate and condensate growth show that despite having lower droplet nucleation in comparison to a flat surface, the droplet area growth on inverse opal regions is larger. These findings showcase potential improvements to 3D microporous structures by employing ALD coating for fluid transport through the porous media.

Atomic layer deposition in porous structures: 3D photonic crystals

2005 ◽  
Vol 244 (1-4) ◽  
pp. 511-516 ◽  
Author(s):  
J.S. King ◽  
D. Heineman ◽  
E. Graugnard ◽  
C.J. Summers
Keyword(s):  
Photonic Crystals ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Porous Structures ◽  
Layer Deposition

Application of Atomic Layer Deposition in Dye-Sensitized Photoelectrosynthesis Cells

2021 ◽  
Vol 3 (1) ◽  
pp. 59-71
Author(s):  
Degao Wang ◽  
Qing Huang ◽  
Weiqun Shi ◽  
Wei You ◽  
Thomas J. Meyer
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Dye Sensitized ◽  
Layer Deposition

Workfunction of Al-Doped ZnO Films Deposited by Atomic Layer Deposition

2018 ◽  
Author(s):  
Peter George Gordon ◽  
Goran Bacic ◽  
Gregory P. Lopinski ◽  
Sean Thomas Barry
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Atomic Ratio ◽  
Aluminum Concentration ◽  
Zno Films ◽  
Transparent Conductor ◽  
Kelvin Probe ◽  
Layer Deposition ◽  
Earth Abundant ◽  
Doped Zno

Al-doped ZnO (AZO) is a promising earth-abundant alternative to Sn-doped In<sub>2</sub>O<sub>3</sub> (ITO) as an n-type transparent conductor for electronic and photovoltaic devices; AZO is also more straightforward to deposit by atomic layer deposition (ALD). The workfunction of this material is particularly important for the design of optoelectronic devices. We have deposited AZO films with resistivities as low as 1.1 x 10<sup>-3</sup> Ωcm by ALD using the industry-standard precursors trimethylaluminum (TMA), diethylzinc (DEZ), and water at 200<sup>◦</sup>C. These films were transparent and their elemental compositions showed reasonable agreement with the pulse program ratios. The workfunction of these films was measured using a scanning Kelvin Probe (sKP) to investigate the role of aluminum concentration. In addition, the workfunction of AZO films prepared by two different ALD recipes were compared: a “surface” recipe wherein the TMA was pulsed at the top of each repeating AZO stack, and a interlamellar recipe where the TMA pulse was introduced halfway through the stack. As aluminum doping increases, the surface recipe produces films with a consistently higher workfunction as compared to the interlamellar recipe. The resistivity of the surface recipe films show a minimum at a 1:16 Al:Zn atomic ratio and using an interlamellar recipe, minimum resistivity was seen at 1:19. The film thicknesses were characterized by ellipsometry, chemical composition by EDX, and resistivity by four-point probe.<br>

One-Dimensional TiO2@GaON Core-Shell Nanowires with Controlled Shell Thickness from Atomic Layer Deposition for Stable and Efficient Photoelectrochemical Water Splitting

2019 ◽  
Author(s):  
Jiajia Tao ◽  
Hong-Ping Ma ◽  
Kaiping Yuan ◽  
Yang Gu ◽  
Jianwei Lian ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Band Gap ◽  
Water Splitting ◽  
Atomic Layer ◽  
Photoelectrochemical Water Splitting ◽  
Core Shell ◽  
Photoelectrochemical Performance ◽  
Highly Efficient ◽  
Layer Deposition ◽  
Shell Nanowires

<div>As a promising oxygen evolution reaction semiconductor, TiO2 has been extensively investigated for solar photoelectrochemical water splitting. Here, a highly efficient and stable strategy for rationally preparing GaON cocatalysts on TiO2 by atomic layer deposition is demonstrated, which we show significantly enhances the</div><div>photoelectrochemical performance compared to TiO2-based photoanodes. For TiO2@20 nm-GaON core-shell nanowires a photocurrent density up to 1.10 mA cm-2 (1.23 V vs RHE) under AM 1.5 G irradiation (100 mW cm-2) has been achieved, which is 14 times higher than that of TiO2 NWs. Furthermore, the oxygen vacancy formation on GaON as well as the band gap matching with TiO2 not only provides more active sites for water oxidation but also enhances light absorption to promote interfacial charge separation and migration. Density functional theory studies of model systems of GaON-modified TiO2 confirm the band gap reduction, high reducibility and ability to activate water. The highly efficient and stable systems of TiO2@GaON core-shell nanowires provide a deeper understanding and universal strategy for enhancing photoelectrochemical performance of photoanodes now available. </div>

Interface Studies of Metal Oxides Grown Directly on Hybrid Perovskite by Atomic Layer Deposition

2019 ◽  
Author(s):  
Claire Burgess ◽  
Farzad Mardekatani Asl ◽  
Valerio Zardetto ◽  
Herbert Lifka ◽  
Sjoerd Veenstra ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxides ◽  
Atomic Layer ◽  
Hybrid Perovskite ◽  
Layer Deposition
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