scholarly journals Transport band gap opening at metal–organic interfaces

2014 ◽  
Vol 32 (4) ◽  
pp. 040602 ◽  
Author(s):  
Francisc Haidu ◽  
Georgeta Salvan ◽  
Dietrich R. T. Zahn ◽  
Lars Smykalla ◽  
Michael Hietschold ◽  
...  
Keyword(s):  
Band Gap ◽  
Organic Interfaces ◽  
Gap Opening ◽  
Metal Organic

Band-Gap Opening in Metallic Single-Walled Carbon Nanotubes by Encapsulation of an Organic Salt

2017 ◽  
Vol 129 (40) ◽  
pp. 12408-12412
Author(s):  
Belén Nieto-Ortega ◽  
Julia Villalva ◽  
Mariano Vera-Hidalgo ◽  
Luisa Ruiz-González ◽  
Enrique Burzurí ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Band Gap ◽  
Single Walled Carbon Nanotubes ◽  
Organic Salt ◽  
Single Walled Carbon ◽  
Gap Opening ◽  
Walled Carbon Nanotubes

Band-gap opening in metallic carbon nanotubes adsorbed on H∕Si(001)

2006 ◽  
Vol 89 (2) ◽  
pp. 023124 ◽  
Author(s):  
Jung-Yup Lee ◽  
Jun-Hyung Cho
Keyword(s):  
Carbon Nanotubes ◽  
Band Gap ◽  
Gap Opening

scholarly journals Raman study of resonance effects in Ga1−xAlxN solid solutions

1998 ◽  
Vol 3 ◽  
Author(s):  
F. Demangeot ◽  
J. Frandon ◽  
M. A. Renucci ◽  
H. Sands ◽  
D. Batchelder ◽  
...  
Keyword(s):  
Band Gap ◽  
Detailed Comparison ◽  
Peak Position ◽  
Band Gap Energy ◽  
Resonance Effects ◽  
Organic Vapor ◽  
Phonon Peak ◽  
Metal Organic ◽  
Raman Study ◽  
Resonant Raman

The photoluminescence and Raman spectra of several Ga1−xAlxN layers (0 ≤ x ≤ 0.86) grown on sapphire substrates by metal-organic vapor phase epitaxy have been recorded at room temperature, under an excitation at 244 nm. Using the photoluminescence spectra, the variation of the band gap of these alloys can be followed only up to x = 0.5. From resonant Raman scattering, it can be deduced that the band gap energy of the solid solution for x very close to 0.7 corresponds to the incident photon energy (5.08 eV). This result is confirmed by a detailed comparison of the present work with previous experimental data on the A1(LO) phonon peak position, obtained under visible excitation.

NONRECIPROCAL ELECTROMAGNETIC DEVICES IN GYROMAGNETIC PHOTONIC CRYSTALS

2013 ◽  
Vol 28 (02) ◽  
pp. 1441010 ◽  
Author(s):  
ZHI-YUAN LI ◽  
RONG-JUAN LIU ◽  
LIN GAN ◽  
JIN-XIN FU ◽  
JIN LIAN
Keyword(s):  
Magnetic Field ◽  
Band Gap ◽  
Electromagnetic Waves ◽  
Experimental Studies ◽  
Magnetic Surface ◽  
Electromagnetic Properties ◽  
Edge States ◽  
Bragg Scattering ◽  
Electromagnetic Devices ◽  
Gap Opening

Gyromagnetic photonic crystal (GPC) offers a promising way to realize robust transport of electromagnetic waves against backscattering from various disorders, perturbations and obstacles due to existence of unique topological electromagnetic states. The dc magnetic field exerting upon the GPC brings about the time-reversal symmetry breaking, splits the band degeneracy and opens band gaps where the topological chiral edge states (CESs) arise. The band gap can originate either from long-range Bragg-scattering effect or from short-range localized magnetic surface plasmon resonance (MSP). These topological edge states can be explored to construct backscattering-immune one-way waveguide and other nonreciprocal electromagnetic devices. In this paper we review our recent theoretical and experimental studies of the unique electromagnetic properties of nonreciprocal devices built in GPCs. We will discuss various basic issues like experimental instrumental setup, sample preparations, numerical simulation methods, tunable properties against magnetic field, band degeneracy breaking and band gap opening and creation of topological CESs. We will investigate the unidirectional transport properties of one-way waveguide under the influence of waveguide geometries, interface morphologies, intruding obstacles, impedance mismatch, lattice disorders, and material dissipation loss. We will discuss the unique coupling properties between one-wave waveguide and resonant cavities and their application as novel one-way bandstop filter and one-way channel-drop filter. We will also compare the CESs created in the Bragg-scattering band gap and the MSP band gap under the influence of lattice disorders. These results can be helpful for designing and exploring novel nonreciprocal electromagnetic devices for optical integration and information processing.

scholarly journals Band Gap Modulation in Zirconium-Based Metal-Organic Frameworks by Defect Engineering

2019 ◽  
Author(s):  
Marco Taddei ◽  
Giulia M. Schukraft ◽  
Michael E. A. Warwick ◽  
Davide Tiana ◽  
Matthew McPherson ◽  
...  
Keyword(s):  
Band Gap ◽  
Gas Phase ◽  
Metal Organic Framework ◽  
Metal Organic Frameworks ◽  
Benzoic Acids ◽  
Defect Engineering ◽  
Metal Organic ◽  
Band Gap Modulation ◽  
Valence Band Energy ◽  
Defective Sites

We report a defect-engineering approach to modulate the band gap of zirconium-based metal-organic framework UiO-66, enabled by grafting of a range of amino-functionalised benzoic acids at defective sites. Defect engineered MOFs were obtained by both post-synthetic exchange and modulated synthesis, featuring band gap in the 4.1-3.3 eV range. Ab-initio calculations suggest that shrinking of the band gap is mainly due to an upward shift of the valence band energy, as a result of the presence of light-absorbing monocarboxylates. The photocatalytic properties of defect-engineered MOFs towards CO<sub>2</sub> reduction to CO in the gas phase and degradation of Rhodamine B in water were tested, observing improved activity in both cases, in comparison to a defective UiO-66 bearing formic acid as the defect-compensating species.

Structure and electronic properties of C2N/graphene predicted by first-principles calculations

RSC Advances ◽  
2016 ◽  
Vol 6 (34) ◽  
pp. 28484-28488 ◽  
Author(s):  
Dandan Wang ◽  
DongXue Han ◽  
Lei Liu ◽  
Li Niu
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Water Splitting ◽  
First Principles ◽  
First Principles Calculations ◽  
Gap Opening

Graphene band gap opening is achieved when integrated with C2N. C2N/graphene heterostructures are promising materials for FETs and water splitting.

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