High electron mobility in InSb epilayers and quantum wells grown with AlSb nucleation on Ge-on-insulator substrates

2014 ◽  
Vol 32 (2) ◽  
pp. 02C116 ◽  
Author(s):  
Mukul C. Debnath ◽  
Tetsuya D. Mishima ◽  
Michael B. Santos ◽  
Lucas C. Phinney ◽  
Terry D. Golding ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electron Mobility ◽  
High Electron ◽  
High Electron Mobility

scholarly journals Особенности ионизации доноров кремния и рассеяние электронов в псевдоморфных квантовых ямах AlGaAs/InGaAs/GaAs при сильном одностороннем delta-легировании

2018 ◽  
Vol 44 (4) ◽  
pp. 34
Author(s):  
Д.А. Сафонов ◽  
А.Н. Виниченко ◽  
Н.И. Каргин ◽  
И.С. Васильевский
Keyword(s):  
Electron Transport ◽  
Quantum Wells ◽  
Transport Properties ◽  
Electron Mobility ◽  
High Electron ◽  
High Electron Mobility ◽  
Dimensional Quantization ◽  
Spacer Layer ◽  
Electron Transport Properties ◽  
Nonmonotonic Variation

AbstractThe influence of the concentration of silicon donors on the electron-transport properties of pseudomorphous Al_0.25Ga_0.75As/In_0.2Ga_0.8As/GaAs quantum wells (QWs) in heterostructures with heavy unilateral δ-doping by Si atoms was studied in a broad temperature interval (2.1–300 K). High electron mobility (up to 35700 cm^2/(V s)) at T = 4.2 K was observed at a 2D (sheet) electron density of 2 × 10^12 cm^–2 in the QW. A band mechanism limiting the ionization of donors at an increased level of doping is described. The nonmonotonic variation of electron mobility with increasing silicon concentration is explained. A growth in the mobility is related to increase in the Fermi momentum and screening, while the subsequent decay is caused by tunneling-induced degradation of the spacer layer with decreasing potential of the conduction band in the region of δ-Si layer. It is shown that the effect is not related to filling of the upper subband of dimensional quantization.

Reduction of microtwin defects for high-electron-mobility InSb quantum wells

2007 ◽  
Vol 91 (6) ◽  
pp. 062106 ◽  
Author(s):  
T. D. Mishima ◽  
M. Edirisooriya ◽  
M. B. Santos
Keyword(s):  
Quantum Wells ◽  
Electron Mobility ◽  
High Electron ◽  
High Electron Mobility

Magnetoplasmons in high electron mobility CdTe/CdMgTe quantum wells

2015 ◽  
Vol 91 (7) ◽  
Author(s):  
I. Grigelionis ◽  
K. Nogajewski ◽  
G. Karczewski ◽  
T. Wojtowicz ◽  
M. Czapkiewicz ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electron Mobility ◽  
High Electron ◽  
High Electron Mobility
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