Effect of sputter power on the photobias stability of zinc-tin-oxide field-effect transistors

2014 ◽  
Vol 32 (1) ◽  
pp. 011202 ◽  
Author(s):  
Bong Seob Yang ◽  
Seungha Oh ◽  
Yoon Jang Kim ◽  
Sang Jin Han ◽  
Hong Woo Lee ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Zinc Tin Oxide

High-performance flexible zinc tin oxide field-effect transistors

2005 ◽  
Vol 87 (19) ◽  
pp. 193503 ◽  
Author(s):  
W. B. Jackson ◽  
R. L. Hoffman ◽  
G. S. Herman
Keyword(s):  
Tin Oxide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Zinc Tin Oxide

scholarly journals Mechanical Stress Stability of Flexible Amorphous Zinc Tin Oxide Thin-Film Transistors

2021 ◽  
Vol 2 ◽  
Author(s):  
Oliver Lahr ◽  
Max Steudel ◽  
Holger von Wenckstern ◽  
Marius Grundmann
Keyword(s):  
Electrical Properties ◽  
Tin Oxide ◽  
Flexible Electronics ◽  
Field Effect ◽  
Tensile Strain ◽  
Room Temperature ◽  
Oxide Thin Film ◽  
Field Effect Mobility ◽  
Threshold Voltage Shift ◽  
Zinc Tin Oxide

Due to their low-temperature processing capability and ionic bonding configuration, amorphous oxide semiconductors (AOS) are well suited for applications within future mechanically flexible electronics. Over the past couple of years, amorphous zinc tin oxide (ZTO) has been proposed as indium and gallium-free and thus more sustainable alternative to the widely deployed indium gallium zinc oxide (IGZO). The present study specifically focuses on the strain-dependence of elastic and electrical properties of amorphous zinc tin oxide thin-films sputtered at room temperature. Corresponding MESFETs have been compared regarding their operation stability under mechanical bending for radii ranging from 5 to 2 mm. Force-spectroscopic measurements yield a plastic deformation of ZTO as soon as the bending-induced strain exceeds 0.83 %. However, the electrical properties of ZTO determined by Hall effect measurements at room temperature are demonstrated to be unaffected by residual compressive and tensile strain up to 1.24 %. Even for the maximum investigated tensile strain of 1.26 %, the MESFETs exhibit a reasonably consistent performance in terms of current on/off ratios between six and seven orders of magnitude, a subthreshold swing around 350 mV/dec and a field-effect mobility as high as 7.5 cm2V−1s−1. Upon gradually subjecting the transistors to higher tensile strain, the channel conductivity steadily improves and consequently, the field-effect mobility increases by nearly 80 % while bending the devices around a radius of 2 mm. Further, a reversible threshold voltage shift of about −150 mV with increasing strain is observable. Overall, amorphous ZTO provides reasonably stable electrical properties and device performance for bending-induced tensile strain up to at least 1.26 % and thus represent a promising material of choice considering novel bendable and transparent electronics.

Low-Temperature Solution-Processed Amorphous Indium Tin Oxide Field-Effect Transistors

2009 ◽  
Vol 131 (31) ◽  
pp. 10826-10827 ◽  
Author(s):  
Hyun Sung Kim ◽  
Myung-Gil Kim ◽  
Young-Geun Ha ◽  
Mercouri G. Kanatzidis ◽  
Tobin J. Marks ◽  
...  
Keyword(s):  
Low Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Solution Processed ◽  
Temperature Solution
Sign in / Sign up

Export Citation Format

Share Document