Atmospheric-pressure low-temperature plasma processes for thin film deposition

2014 ◽  
Vol 32 (3) ◽  
pp. 030801 ◽  
Author(s):  
Hiroaki Kakiuchi ◽  
Hiromasa Ohmi ◽  
Kiyoshi Yasutake
2012 ◽  
Vol 9 (11-12) ◽  
pp. 1041-1073 ◽  
Author(s):  
Francoise Massines ◽  
Christian Sarra-Bournet ◽  
Fiorenza Fanelli ◽  
Nicolas Naudé ◽  
Nicolas Gherardi

2006 ◽  
Vol 321-323 ◽  
pp. 1332-1335 ◽  
Author(s):  
Hong Lae Sohn ◽  
Young Tae Cho ◽  
Bong Ju Lee

We developed a device that makes possible the normal generation of low-temperature plasma under atmospheric pressure. For plasma generation, a radio frequency of rf (13.56 MHz) was used, for plasma gas, helium (He), and for material gases, acetylene (C2H2) and toluene (C6H5CH3) were used. As a result of measuring Fourier transform infrared (FT-IR) after adding the CO2 gas to the generated plasma, the absorption of C=O (carboxyl group) was observed around 1715 cm-1. When the flow rates of the added CO2 increased, the absorption peak increased at the same time, and we knew that this originated from the CO2 molecules.


2009 ◽  
Vol 37 (7) ◽  
pp. 1127-1128 ◽  
Author(s):  
Chun Huang ◽  
Wen-Tung Hsu ◽  
Chi-Hung Liu ◽  
Shin-Yi Wu ◽  
Shih-Hsien Yang ◽  
...  

2019 ◽  
Vol 674 ◽  
pp. 58-63 ◽  
Author(s):  
Md. Shahiduzzaman ◽  
Ryosuke Yamada ◽  
Tatsuki Chikamatsu ◽  
Tsunehisa Ono ◽  
Yasunori Tanaka ◽  
...  

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