Polarity control and transport properties of Mg-doped (0001) InN by plasma-assisted molecular beam epitaxy

2013 ◽  
Vol 31 (3) ◽  
pp. 031504 ◽  
Author(s):  
Soojeong Choi ◽  
Feng Wu ◽  
Oliver Bierwagen ◽  
James S. Speck
Keyword(s):  
Molecular Beam Epitaxy ◽  
Transport Properties ◽  
Molecular Beam ◽  
Mg Doped

Charge carrier transport properties of Mg-doped Al0.6Ga0.4N grown by molecular beam epitaxy

2018 ◽  
Vol 33 (8) ◽  
pp. 085005 ◽  
Author(s):  
Xianhe Liu ◽  
Ayush Pandey ◽  
David A Laleyan ◽  
Kishwar Mashooq ◽  
Eric T Reid ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Charge Carrier ◽  
Transport Properties ◽  
Carrier Transport ◽  
Molecular Beam ◽  
Charge Carrier Transport ◽  
Mg Doped ◽  
Carrier Transport Properties

scholarly journals Vacancy-type defects in Mg-doped GaN grown by ammonia-based molecular beam epitaxy probed using a monoenergetic positron beam

2016 ◽  
Vol 119 (24) ◽  
pp. 245702 ◽  
Author(s):  
Akira Uedono ◽  
Marco Malinverni ◽  
Denis Martin ◽  
Hironori Okumura ◽  
Shoji Ishibashi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Positron Beam ◽  
Mg Doped

Local vibrational modes of H complexes in Mg-doped GaN grown by molecular beam epitaxy

2004 ◽  
Vol 84 (6) ◽  
pp. 897-899 ◽  
Author(s):  
R. Cuscó ◽  
L. Artús ◽  
D. Pastor ◽  
F. B. Naranjo ◽  
E. Calleja
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Vibrational Modes ◽  
Local Vibrational Modes ◽  
Mg Doped

InGaN/GaN MQW and Mg-Doped GaN Growth Using a Shutter Control Method by RF-Molecular Beam Epitaxy

1999 ◽  
Vol 176 (1) ◽  
pp. 273-277 ◽  
Author(s):  
S. Nakamura ◽  
A. Kikuchi ◽  
K. Kusakabe ◽  
D. Sugihara ◽  
Y. Toyoura ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Control Method ◽  
Mg Doped

Manifestation of the DX Centre in Heavily δ-Doped GaAs(Si)

1992 ◽  
Vol 281 ◽  
Author(s):  
S. Arscott ◽  
M. Missous ◽  
L. Dobaczewski ◽  
P. C. Harness ◽  
D. K. Maude ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Transport Properties ◽  
Electron Concentration ◽  
Low Temperatures ◽  
Molecular Beam ◽  
Wave Functions ◽  
Potential Well ◽  
Electronic Wave ◽  
Hall Measurements ◽  
Electronic Wave Functions

ABSTRACTShubnikov-de Haas and Hall measurements have been performed on singly delta doped GaAs(Si) structures, grown by molecular beam epitaxy, enabling us to study the effects of illumination and temperature upon bulk and individual subband, mobilities and carrier concentrations. In a highly doped sample, where the peak 3D electron concentration approaches 2×1019cm−3, we have observed novel changes in subband transport characteristics, not observed in the lower doped samples, which we attribute to the presence of DX centre phenomena. This paper explains the variations in individual subband transport properties due to a possible shift of the electronic wave functions contained in the potential well. This shift occurs due to a recombination-autoionization(R-A) process involving filled DX centres and free holes upon sample illumination at low temperatures.

Investigation on the electrical transport properties of highly (00l)-textured Sb2Te3 films deposited by molecular beam epitaxy

2014 ◽  
Vol 115 (2) ◽  
pp. 024307 ◽  
Author(s):  
Xiangpeng Zhang ◽  
Zhigang Zeng ◽  
Chao Shen ◽  
Ziqiang Zhang ◽  
Zhichong Wang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Transport Properties ◽  
Electrical Transport ◽  
Molecular Beam ◽  
Electrical Transport Properties

Temperature‐dependent transport properties ofn+GaAs/low‐temperature GaAs/n+GaAs structures grown by molecular beam epitaxy

1996 ◽  
Vol 79 (11) ◽  
pp. 8488-8492 ◽  
Author(s):  
Jenn‐Fang Chen ◽  
Nie‐Chuan Chen ◽  
Shih‐Yang Chiu ◽  
Pie‐yong Wang ◽  
Wei‐I Lee ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Transport Properties ◽  
Molecular Beam ◽  
Temperature Dependent ◽  
Dependent Transport ◽  
Low Temperature Gaas
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