Low-temperature oriented growth of vanadium dioxide films on CoCrTa metal template on Si and vertical metal–insulator transition

2012 ◽  
Vol 30 (5) ◽  
pp. 051502 ◽  
Author(s):  
Kunio Okimura ◽  
Md.Suruz Mian
Keyword(s):  
Low Temperature ◽  
Vanadium Dioxide ◽  
Insulator Transition ◽  
Oriented Growth ◽  
Metal Insulator Transition ◽  
Metal Insulator

scholarly journals Spin injection into vanadium dioxide films from a typical ferromagnetic metal, across the metal–insulator transition of the vanadium dioxide films

AIP Advances ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 035120
Author(s):  
Kazuma Tamura ◽  
Teruo Kanki ◽  
Shun Shirai ◽  
Hidekazu Tanaka ◽  
Yoshio Teki ◽  
...  
Keyword(s):  
Vanadium Dioxide ◽  
Spin Injection ◽  
Ferromagnetic Metal ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

The low temperature magnetoresistance of arsenic-doped silicon near the metal—Insulator transition

1985 ◽  
Vol 28 (1-2) ◽  
pp. 93-99 ◽  
Author(s):  
W.N. Shafarman ◽  
T.G. Castner ◽  
J.S. Brooks ◽  
K.P. Martin ◽  
M.J. Naughton
Keyword(s):  
Low Temperature ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Doped Silicon

Electroresistance Effect due to Mo Substitution at Mn-Site in Monovalent Doped La0.85Ag0.15Mn1-xMoxO3 (x = 0.00 and 0.05) Manganites

2021 ◽  
Vol 317 ◽  
pp. 17-21
Author(s):  
Muhammad Syazwan Mohd Sabri ◽  
Nur Ain Athirah Che Apandi ◽  
Norazila Ibrahim
Keyword(s):  
Transition Temperature ◽  
Low Temperature ◽  
Temperature Region ◽  
Potential Application ◽  
Insulator Transition ◽  
Applied Current ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Magnetic Inhomogeneity ◽  
Spintronic Devices

The electroresistance, ER effect of La0.85Ag0.15Mn1-xMoxO3 (x = 0.00 and 0.05) samples prepared using solid method are investigated. The increased of applied current from 5 mA to 10 mA does not change the metal-insulator transition temperature, TMI for both samples however decreased the resistivity in the temperature region of 50 K – 300 K. Both samples exhibit large ER effect at low temperature region. At TMI, the ER value is 75.5% (x =0) and decrease to 34.15% (x = 0.05). However, at 300 K, the value of ER increases to 57 % for Mo substituted sample, and the value decreases to 6.4% for the x =0 sample. The enhanced ER effect at 300 K may be due to the growth of conductive filaments under increased applied current. The increase of applied current may perturb the arrangement of magnetic inhomogeneity induced by Mo substitution, result in reduction of resistivity and lead to the observation of ER effect. These findings suggest potential application of La0.85Ag0.15Mn1-xMoxO3 (x = 0.05) in spintronic devices.

Enhancement of thermal conductivity across the metal-insulator transition in vanadium dioxide

2018 ◽  
Vol 113 (6) ◽  
pp. 061902 ◽  
Author(s):  
Lu Chen ◽  
Ziji Xiang ◽  
Colin Tinsman ◽  
Tomoya Asaba ◽  
Qing Huang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Vanadium Dioxide ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator
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