Initiated-chemical vapor deposition of organosilicon layers: Monomer adsorption, bulk growth, and process window definition

2012 ◽  
Vol 30 (4) ◽  
pp. 041503 ◽  
Author(s):  
Gianfranco Aresta ◽  
Jurgen Palmans ◽  
Mauritius C. M. van de Sanden ◽  
Mariadriana Creatore
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Process Window ◽  
Bulk Growth ◽  
Initiated Chemical Vapor Deposition

scholarly journals Initiated Chemical Vapor Deposition (iCVD) Functionalized Polylactic Acid–Marine Algae Composite Patch for Bone Tissue Engineering

Polymers ◽  
2021 ◽  
Vol 13 (2) ◽  
pp. 186
Author(s):  
Wiebke Reichstein ◽  
Levke Sommer ◽  
Salih Veziroglu ◽  
Selin Sayin ◽  
Stefan Schröder ◽  
...  
Keyword(s):  
Tissue Engineering ◽  
Chemical Vapor Deposition ◽  
Bone Tissue Engineering ◽  
Bone Tissue ◽  
Vapor Deposition ◽  
Marine Algae ◽  
Chemical Vapor ◽  
Human Osteoblasts ◽  
Composite Patch ◽  
Initiated Chemical Vapor Deposition

The current study aimed to describe the fabrication of a composite patch by incorporating marine algae powders (MAPs) into poly-lactic acid (PLA) for bone tissue engineering. The prepared composite patch was functionalized with the co-polymer, poly (2-hydroxyethyl methacrylate-co-ethylene glycol dimethacrylate) (p(HEMA-co-EGDMA)) via initiated chemical vapor deposition (iCVD) to improve its wettability and overall biocompatibility. The iCVD functionalized MAP–PLA composite patch showed superior cell interaction of human osteoblasts. Following the surface functionalization by p(HEMA-co-EGDMA) via the iCVD technique, a highly hydrophilic patch was achieved without tailoring any morphological and structural properties. Moreover, the iCVD modified composite patch exhibited ideal cell adhesion for human osteoblasts, thus making the proposed patch suitable for potential biomedical applications including bone tissue engineering, especially in the fields of dentistry and orthopedy.

Polymer layers by initiated chemical vapor deposition for thin film gas barrier encapsulation

2011 ◽  
Vol 519 (14) ◽  
pp. 4479-4482 ◽  
Author(s):  
D.A. Spee ◽  
R. Bakker ◽  
C.H.M. van der Werf ◽  
M.J. van Steenbergen ◽  
J.K. Rath ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Gas Barrier ◽  
Polymer Layers ◽  
Initiated Chemical Vapor Deposition

Low Temperature Preparation of High-Quality Pb(Zr,Ti)O3 Films by Metal Organic Chemical Vapor Deposition with High Reproducibility

2001 ◽  
Vol 688 ◽  
Author(s):  
Hiroshi Funakubo ◽  
Kuniharu Nagashima ◽  
Masanori Aratani ◽  
Kouji Tokita ◽  
Takahiro Oikawa ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Process Window ◽  
High Quality ◽  
Low Temperature Preparation

AbstractPb(Zr,Ti)O3 (PZT) is one of the most promising materials for ferroelectric random access memory (FeRAM) application. Among the various preparation methods, metalorganic chemical vapor deposition (MOCVD) has been recognized as a most important one to realize high density FeRAM because of its potential of high-step-coverage and large-area-uniformity of the film quality.In the present study, pulsed-MOCVD was developed in which a mixture of the source gases was pulsed introduced into reaction chamber with interval. By using this deposition technique, simultaneous improvements of the crystallinity, surface smoothness, and electrical property of the film have been reached by comparing to the conventional continuous gas-supplied MOCVD. Moreover, this film had larger remanent polarization (Pr) and lower leakage current density. This is owing to reevaporation of excess Pb element from the film and increase of migration on the surface of substrate during the interval time.This process is also very effective to decrease the deposition temperature of the film having high quality. In fact, the Pr and the leakage current density of polycrystalline Pb(Zr0.35Ti0.65)O3 film deposited at 415 °C were 41.4 μC/cm2 and on the order of 10−7 A/cm2 at 200 kV/cm. This Pr value was almost the same as that of the epitaxially grown film deposited at 415 °C with the same composition corrected for the orientation difference. This suggests that the polycrystalline PZT film prepared by pulsed-MOCVD had the epitaxial-grade ferroelectric properties even through the deposition temperature was as low as 415 °C. Moreover, large “process window” comparable to the process window at 580 °C, above 150 °C higher temperature and was widely used condition, was achieved even at 395°C by the optimization of the deposition condition.

scholarly journals Initiated chemical vapor deposition polymers for high peak-power laser targets

2017 ◽  
Vol 635 ◽  
pp. 37-41 ◽  
Author(s):  
Salmaan H. Baxamusa ◽  
Xavier Lepró ◽  
Tom Lee ◽  
Matthew Worthington ◽  
Paul Ehrmann ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Peak Power ◽  
Chemical Vapor ◽  
High Peak ◽  
High Peak Power ◽  
Power Laser ◽  
Initiated Chemical Vapor Deposition

Routes to 3D conformal solid-state dielectric polymers: electrodeposition versus initiated chemical vapor deposition

2015 ◽  
Vol 2 (5) ◽  
pp. 502-508 ◽  
Author(s):  
Megan B. Sassin ◽  
Jeffrey W. Long ◽  
Jean Marie Wallace ◽  
Debra R. Rolison
Keyword(s):  
Chemical Vapor Deposition ◽  
Solid State ◽  
Chemical Vapour Deposition ◽  
Vapor Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Chemical Vapor ◽  
Initiated Chemical Vapor Deposition ◽  
Carbon Coated ◽  
Conductive Substrates

We show that two distinct methods, electropolymerization and initiated chemical vapour deposition (iCVD), can be adapted to generate ultrathin polymers (30–50 nm thick) at three dimensionally (3D) porous conductive substrates comprising ∼300 μm-thick carbon-coated silica fiber paper (C@SiO2).

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