Elaboration of high aspect ratio monocrystalline silicon suspended nanobridges by low temperature alkaline treatment of dry etched trenches

2012 ◽  
Vol 30 (1) ◽  
pp. 010601
Author(s):  
Thomas Defforge ◽  
Gaël Gautier ◽  
Thomas Tillocher ◽  
Rémi Dussart ◽  
François Tran-Van
Keyword(s):  
Low Temperature ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Alkaline Treatment ◽  
Monocrystalline Silicon

EFAB: High Aspect Ratio, Arbitrary 3-D Metal Microstructures Using a Low-Cost Automated Batch Process

1999 ◽  
Author(s):  
Fan-Gang Tseng ◽  
Gang Zhang ◽  
Uri Frodis ◽  
Adam Cohen ◽  
Florian Mansfeld ◽  
...  
Keyword(s):  
Low Temperature ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Low Cost ◽  
Batch Process ◽  
Unlimited Number ◽  
Metal Layers ◽  
Electrochemical Fabrication ◽  
Low Temperature Process

Abstract EFAB (“Electrochemical FABrication”) is a new micromachining process utilizing an innovative “Instant Masking” (IM) technique to electrochemically deposit an unlimited number of metal layers for microfabrication. Through this approach, high-aspect-ratio microstructures with arbitrary 3-D geometry can be rapidly and automatically batch-fabricated at low temperature (< 60 °C) using an inexpensive desktop machine. IC-MEMS integration can also be carried out by this low temperature process.

scholarly journals Low temperature fabrication of Fe2O3 nanorod film coated with ultra-thin g-C3N4 for a direct z-scheme exerting photocatalytic activities

RSC Advances ◽  
2018 ◽  
Vol 8 (59) ◽  
pp. 33600-33613 ◽  
Author(s):  
Suhee Kang ◽  
Joonyoung Jang ◽  
Rajendra C. Pawar ◽  
Sung-Hoon Ahn ◽  
Caroline Sunyong Lee
Keyword(s):  
Low Temperature ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Photocatalytic Activities

The engineered high aspect ratio of Fe2O3 nanorods coated with g-C3N4 demonstrates z-scheme mechanism, showing the best performance in 4-nitrophenol photodegradation and H2 evolution.

Low-temperature spin-on-glass method involving high-pressure annealing for filling high-aspect-ratio structures

2014 ◽  
Vol 53 (6) ◽  
pp. 068007 ◽  
Author(s):  
Daeseok Lee ◽  
Jiyong Woo ◽  
Sangsu Park ◽  
Euijun Cha ◽  
Sangheon Lee ◽  
...  
Keyword(s):  
High Pressure ◽  
Low Temperature ◽  
Aspect Ratio ◽  
High Aspect Ratio

Low Temperature Copper Deposition by PE-ALD

2009 ◽  
Vol 1195 ◽  
Author(s):  
Jiajun Mao ◽  
Eric Eisenbraun ◽  
Vincent Omarjee ◽  
Clement Lanslot ◽  
Christian Dussarrat
Keyword(s):  
Low Temperature ◽  
Aspect Ratio ◽  
Deposition Rate ◽  
Electrochemical Deposition ◽  
High Aspect Ratio ◽  
Seed Layer ◽  
Surface Coverage ◽  
Copper Deposition ◽  
Process Conditions ◽  
Film Properties

AbstractWith the continuing scaling in device sizes, sputtered copper is not expected to achieve the conformality and surface coverage requirements to be an effective seed layer for electrochemical deposition in sub-32nm features. Additionally, the metallization demands of high aspect ratio TSVs in 3D-architectures pose similar challenges. In this work, a manufacturable low temperature Cu PE-ALD process has been developed employing a novel O and F-free precursor. The ALD process conditions are correlated with key film properties, including deposition rate, composition, step coverage, and resistivity. Additionally, the influence of precursor substituents on the deposition rate and preliminary integration performance are discussed.

scholarly journals Torsion Testing Of Diffusion Bonded Liga Formed Nickel

1998 ◽  
Vol 546 ◽  
Author(s):  
T. R. Christenson ◽  
T. E. Buchheit ◽  
D. T. Schmale
Keyword(s):  
Low Temperature ◽  
Aspect Ratio ◽  
Bond Strength ◽  
Mechanical Strength ◽  
High Aspect Ratio ◽  
Strength Degradation ◽  
Test Technique ◽  
Torsion Testing

AbstractA test technique has been devised which is suitable for the testing of the bond strength of batch diffusion bonded LIGA or DXRL defined structures. The method uses a torsion tester constructed with the aid of LIGA fabrication and distributed torsion specimens which also make use of the high aspect ratio nature of DXRL based processing. Measurements reveal achieved bond stengths of 130 MPa between electroplated nickel with a bond temperature of 450°C at 7 ksi pressure which is a sufficiently low temperature to avoid mechanical strength degradation.

Copper Electroplating for Damascene ULSI Interconnects

1998 ◽  
Vol 514 ◽  
Author(s):  
V. M. Dubin ◽  
S. Lopatin ◽  
S. Chen ◽  
R. Cheung ◽  
C. Ryu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Aspect Ratio ◽  
Tensile Stress ◽  
High Aspect Ratio ◽  
Seed Layer ◽  
Cu Films ◽  
Step Coverage ◽  
Copper Electroplating ◽  
Electroplated Copper ◽  
Bottom Step

ABSTRACTCopper was electroplated on sputtered Cu seed layer with Ta diffusion barrier. We achieved enhanced Cu deposition at the bottom of trenches/vias and defect-free filling sub-0.5 μm trenches (down to 0.25 μm width) of high aspect ratio (up to 4:1). Large grains occupying the entire trench were observed. Bottom step coverage of electroplated copper in sub-0.5 μm trenches was estimated to be about 140%, while sidewalls step coverage was about 120%. Via resistance for sub-0.5 μm vias was measured to be below 0.55 Ω. Strong <111> texture, large grains, and low tensile stress were observed in electroplated Cu films and in-laid Cu lines after low temperature anneal.

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