Process-structure-property correlations in pulsed dc reactive magnetron sputtered vanadium oxide thin films

2011 ◽  
Vol 29 (6) ◽  
pp. 061504 ◽  
Author(s):  
Chandrasekaran Venkatasubramanian ◽  
Orlando M. Cabarcos ◽  
William R. Drawl ◽  
David L. Allara ◽  
S. Ashok ◽  
...  
Keyword(s):  
Thin Films ◽  
Vanadium Oxide ◽  
Reactive Magnetron ◽  
Structure Property ◽  
Oxide Thin Films ◽  
Pulsed Dc ◽  
Vanadium Oxide Thin Films ◽  
Process Structure ◽  
Property Correlations

Low temperature charge carrier hopping transport mechanism in vanadium oxide thin films grown using pulsed dc sputtering

2009 ◽  
Vol 94 (22) ◽  
pp. 222110 ◽  
Author(s):  
S. S. N. Bharadwaja ◽  
C. Venkatasubramanian ◽  
N. Fieldhouse ◽  
S. Ashok ◽  
M. W. Horn ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Charge Carrier ◽  
Vanadium Oxide ◽  
Transport Mechanism ◽  
Oxide Thin Films ◽  
Hopping Transport ◽  
Dc Sputtering ◽  
Pulsed Dc ◽  
Vanadium Oxide Thin Films

Stoichiometry and microstructural effects on electrical conduction in pulsed dc sputtered vanadium oxide thin films

2009 ◽  
Vol 24 (4) ◽  
pp. 1590-1599 ◽  
Author(s):  
Bryan D. Gauntt ◽  
Elizabeth C. Dickey ◽  
Mark W. Horn
Keyword(s):  
Thin Films ◽  
Vanadium Oxide ◽  
Temperature Coefficient ◽  
Oxygen Content ◽  
Equilibrium Phase ◽  
Electron Diffraction Data ◽  
Cubic Phase ◽  
Oxide Thin Films ◽  
Pulsed Dc ◽  
Vanadium Oxide Thin Films

Vanadium oxide thin films were deposited using pulsed direct current (dc) magnetron sputtering in an atmosphere containing argon and oxygen. The total pressure was varied from 2.5 to 15 mTorr, and the oxygen-to-argon ratio was varied from 2.5 to 30%. The resulting films were characterized using Rutherford backscattering spectroscopy (RBS), transmission electron microscopy (TEM), electron energy loss spectroscopy (EELS), and glancing incidence x-ray diffraction (GIXRD). Electrical resistivity was calculated from I–V curves acquired from two-point-probe measurements and thicknesses measured from bright-field TEM images of cross-sectioned samples. TEM and GIXRD were used to characterize the crystallinity of each film. A transition from nanocrystalline to amorphous growth was observed with increasing partial pressure of oxygen. In all samples, the only crystalline phase observed was cubic vanadium oxide with the sodium chloride structure. Though the cubic VOx equilibrium phase field is limited to a maximum of x = 1.3, the cubic phase was observed with a value of x up to 2 in the present work. It was apparent from electron diffraction data that increased oxygen content correlated with an increase in the film disorder. The increase in oxygen content also corresponded with an increase in the film resistivity, which varied over 7 orders of magnitude from 1.18 × 10−3 to 2.98 × 104 Ω·cm. The temperature coefficient of resistance was found to increase with increasing oxygen content from −0.1 to −3.5%/°C. A direct correlation between film disorder and temperature coefficient of resistivity (TCR) was observed and could be exploited to engineer materials with the desired TCR.

W-Doped Vanadium Oxide Thin Films Prepared by Reactive Magnetron Sputtering

2013 ◽  
Vol 652-654 ◽  
pp. 1747-1750
Author(s):  
Shuang Chen ◽  
Li Fang Zhang ◽  
Cui Zhi Dong ◽  
Kuai Zhang ◽  
Xiudong Zhu
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Vanadium Oxide ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Oxide Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Vanadium Oxide Thin Films

W-doped Vanadium oxide thin films were prepared on the substrates of glass and Si (100) by reactive magnetron sputtering after annealing in vacuum. The structure and morphology were characterized by X-ray diffractometer and atomic force microscopy(AFM), respectively. The results show that,when the oxygen volume percent (Po2) increasing from 15% to 25%, the films on the Si(100) were vanadium oxides with high-valences. After vacuum annealing at 500°C for 2h, the major phase of W doped films on glass is VO2. The surface roughness of the film increase for the longer time annealing.

Properties of Vanadium Oxide Films Prepared by DC Reactive Magnetron Sputtering at Different Oxygen Partial Pressures

2012 ◽  
Vol 538-541 ◽  
pp. 105-109 ◽  
Author(s):  
Ren Gui Huang ◽  
Dong Ping Zhang ◽  
Ting Zhang ◽  
Yan Li ◽  
You Tong Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Vanadium Oxide ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Oxide Thin Films ◽  
Dc Reactive Magnetron Sputtering ◽  
Vanadium Oxide Thin Films

Due to their unique physical and chemical properties, vanadium oxide thin films have become a hot research topic. In the present work, Vanadium oxide thin films were prepared by DC reactive magnetron sputtering at different oxygen partial pressure and thermally annealed in Ar atmosphere at 500°C for 2 hours. The microstructure, transmittance, optical band gap, resistivity, and temperature coefficient resistance (TCR) were measured. The results suggest that increasing of oxygen partial pressure can obviously improve the optical and electric properties

Structure Characterization of W-Doped Vanadium Oxide Thin Films Prepared by Reactive Magnetron Sputtering

2013 ◽  
Vol 690-693 ◽  
pp. 1694-1697
Author(s):  
Shuang Chen ◽  
Li Fang Zhang ◽  
Shu Juan Xiao ◽  
Cui Zhi Dong
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Magnetron Sputtering ◽  
Vanadium Oxide ◽  
Reactive Magnetron Sputtering ◽  
Structure Characterization ◽  
Root Mean Square Roughness ◽  
Reactive Magnetron ◽  
Oxide Thin Films ◽  
Vanadium Oxide Thin Films

W-doped Vanadium oxide thin films were prepared on the substrates of SiO2 glass, float glass and Si (100) by reactive magnetron sputtering after annealing in vacuum. The structure, morphology and phase transition were characterized by X-ray diffractometer, atomic force microscopy (AFM) and differential thermal analysis (DTA), respectively. The results show that, the major phase of W-doped films on SiO2 glass is VO2.Dopant reduce the phase transition temperature of VO2 thin films to 21.9°C. The root-mean-square roughness of the film increase for the longer deposition time.

Vanadium oxide thin films for bolometric applications deposited by reactive pulsed dc sputtering

2009 ◽  
Vol 27 (4) ◽  
pp. 951-955 ◽  
Author(s):  
N. Fieldhouse ◽  
S. M. Pursel ◽  
R. Carey ◽  
M. W. Horn ◽  
S. S. N. Bharadwaja
Keyword(s):  
Thin Films ◽  
Vanadium Oxide ◽  
Oxide Thin Films ◽  
Dc Sputtering ◽  
Pulsed Dc ◽  
Vanadium Oxide Thin Films
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