Integration of thin film transistors and vertical thin film field emitter arrays using ion-induced bending

2011 ◽  
Vol 29 (3) ◽  
pp. 032205 ◽  
Author(s):  
Tomoya Yoshida ◽  
Takashi Nishi ◽  
Masayoshi Nagao ◽  
Takashi Shimizu ◽  
Seigo Kanemaru
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Emitter ◽  
Field Emitter Arrays

Active-Matrix Field Emission Display with Amorphous Silicon Thin-Film Transistors and Mo-Tip Field Emitter Arrays

ETRI Journal ◽  
2002 ◽  
Vol 24 (4) ◽  
pp. 290-298 ◽  
Author(s):  
Yoon-Ho Song Song ◽  
C-S Hwang Hwang ◽  
Y-R Cho Cho ◽  
B-C Kim Kim ◽  
S-D Ahn Ahn ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Field Emission ◽  
Thin Film Transistors ◽  
Field Emission Display ◽  
Silicon Thin Film ◽  
Field Emitter ◽  
Active Matrix ◽  
Field Emitter Arrays

Fabrication of HfC-Coated Si Field Emitter Arrays with Built-in Poly-Si Thin-Film Transistor

2005 ◽  
Vol 44 (7B) ◽  
pp. 5740-5743 ◽  
Author(s):  
Masayoshi Nagao ◽  
Yutaka Sacho ◽  
Takashi Matsukawa ◽  
Seigo Kanemaru ◽  
Junji Itoh
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Field Emitter ◽  
Field Emitter Arrays ◽  
Si Thin Film

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

A Proposal of High Performance Organic Thin Film Transistors

2010 ◽  
Vol 130 (2) ◽  
pp. 161-166
Author(s):  
Yoshinori Ishikawa ◽  
Yasuo Wada ◽  
Toru Toyabe ◽  
Ken Tsutsui
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film
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