Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors

2011 ◽  
Vol 29 (3) ◽  
pp. 032204 ◽  
Author(s):  
Lu Liu ◽  
Tsung Sheng Kang ◽  
David A. Cullen ◽  
Lin Zhou ◽  
Jinhyung Kim ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Field Plate ◽  
Electron Mobility Transistors ◽  
Source Field

Effect of the Source Field Plate on AlGaN/GaN High Electron Mobility Transistors during Off-State Stress

2019 ◽  
Vol 41 (6) ◽  
pp. 41-49
Author(s):  
Lu Liu ◽  
Tsung-Sheng Kang ◽  
David A. Cullen ◽  
Lin Zhou ◽  
Jinhyung Kim ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Field Plate ◽  
Electron Mobility Transistors ◽  
Source Field ◽  
State Stress

The Effects of Device Dimension, Substrate Temperature, and Gate Metallization on the Reliability of AlGaN/GaN High Electron Mobility Transistors

2012 ◽  
Vol 1396 ◽  
Author(s):  
F. Ren ◽  
S. J. Pearton ◽  
Lu Liu ◽  
T.-S. Kang ◽  
E. A. Douglas ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Degradation Mechanism ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Algan Layer ◽  
High Electron Mobility ◽  
Field Plate ◽  
Electron Mobility Transistors ◽  
Source Field ◽  
State Stress

ABSTRACTThe effects of source field plates on AlGaN/GaN High Electron Mobility Transistor reliability under off-state stress conditions were investigated using step-stress cycling. The source field plate enhanced the drain breakdown voltage from 55V to 155V and the critical voltage for off-state gate stress from 40V to 65V, relative to devices without the field plate. Transmission electron microscopy was used to examine the degradation of the gate contacts. The presence of cracking that appeared on both source and drain side of the gate edges was attributed to the inverse piezoelectric effect. In addition, a thin oxide layer was observed between the Ni gate contact and the AlGaN layer, and both Ni and oxygen had diffused into the AlGaN layer. The critical degradation voltage of AlGaN/GaN High Electron Mobility Transistors during off-state electrical stress was determined as a function of Ni/Au gate dimensions (0.1-0.17μm). Devices with different gate length and gate-drain distances were found to exhibit the onset of degradation at different source-drain biases but similar electric field strengths, showing that the degradation mechanism is primarily field-driven. The temperature dependence of sub-threshold drain current versus gate voltage at a constant drain bias voltage were used to determine the trap densities in AlGaN/GaN high electron mobility transistors (HEMTs) before and after the off-state stress. Two different trap densities were obtained for the measurements conducted at 300-493K and 493-573K, respectively.

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