Chloride ion detection by InN gated AlGaN∕GaN high electron mobility transistors

2010 ◽  
Vol 28 (1) ◽  
pp. L5-L8 ◽  
Author(s):  
Byung-Hwan Chu ◽  
Hon-Way Lin ◽  
Shangjr Gwo ◽  
Yu-Lin Wang ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Chloride Ion ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Ion Detection ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Chloride Ion Detection by InN Gated AlGaN/GaN High Electron Mobility Transistors

2009 ◽  
Vol 1202 ◽  
Author(s):  
Byung Hwan Chu ◽  
Hon-way Lin ◽  
Shangjr Gwo ◽  
Yu-Lin Wang ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Mobility ◽  
Chloride Ion ◽  
High Electron Mobility Transistors ◽  
High Electron Mobility Transistor ◽  
Ion Concentration ◽  
High Electron ◽  
Ion Detection ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

AbstractChloride ion concentration can be used as a biomarker for the level of pollen exposure in allergic asthma, chronic cough and airway acidification related to respiratory disease. AlGaN/GaN high electron mobility transistor (HEMT) with an InN thin film in the gate region was used for real time detection of chloride ion detection. The InN thin film provided surface sites for reversible anion coordination. The sensor exhibited significant changes in channel conductance upon exposure to various concentrations of NaCl solutions. The sensor was tested over the range of 100 nM to 100 μM NaCl solutions. The effect of cations on the chloride ion detection was also studied.

Low-Frequency Noise Investigation of AlGaN/GaN High-Electron-Mobility Transistors

2021 ◽  
pp. 108050
Author(s):  
Maria Glória Caño de Andrade ◽  
Luis Felipe de Oliveira Bergamim ◽  
Braz Baptista Júnior ◽  
Carlos Roberto Nogueira ◽  
Fábio Alex da Silva ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Low Frequency ◽  
High Electron Mobility Transistors ◽  
Frequency Noise ◽  
High Electron ◽  
Low Frequency Noise ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

scholarly journals Gate Capacitance and Off-State Characteristics of E-Mode p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors After Gate Stress Bias

2021 ◽  
Author(s):  
Yu-Chen Lai ◽  
Yi-Nan Zhong ◽  
Ming-Yan Tsai ◽  
Yue-Ming Hsin
Keyword(s):  
Leakage Current ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Gate Capacitance ◽  
Enhancement Mode ◽  
Electron Mobility Transistors ◽  
Higher Power ◽  
State Capacitance

AbstractThis study investigated the gate capacitance and off-state characteristics of 650-V enhancement-mode p-GaN gate AlGaN/GaN high-electron-mobility transistors after various degrees of gate stress bias. A significant change was observed in the on-state capacitance when the gate stress bias was greater than 6 V. The corresponding threshold voltage exhibited a positive shift at low gate stress and a negative shift when the gate stress was greater than 6 V, which agreed with the shift observation from the I–V measurement. Moreover, the off-state leakage current increased significantly after the gate stress exceeded 6 V during the off-state characterization although the devices could be biased up to 1000 V without breakdown. The increase in the off-state leakage current would lead to higher power loss.

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