In situ synthesis and direct immobilization of ssDNA on electron beam patterned hydrogen silsesquioxane

2009 ◽  
Vol 27 (6) ◽  
pp. 3082 ◽  
Author(s):  
Omar D. Negrete ◽  
M. Sendar Onses ◽  
Paul F. Nealy ◽  
Franco Cerrina
Keyword(s):  
Electron Beam ◽  
In Situ Synthesis ◽  
Hydrogen Silsesquioxane ◽  
Direct Immobilization

In situ synthesis of a binary Ti–10at% Nb alloy by electron beam melting using a mixture of elemental niobium and titanium powders

2020 ◽  
Vol 282 ◽  
pp. 116646 ◽  
Author(s):  
Maria A. Surmeneva ◽  
Andrey Koptyug ◽  
Dmitriy Khrapov ◽  
Yuriy F. Ivanov ◽  
Tatiana Mishurova ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Melting ◽  
In Situ Synthesis ◽  
Titanium Powders

In-situ synthesis of oxygen free SiC fibers and ropes by electron beam melting

2007 ◽  
Vol 61 (4-5) ◽  
pp. 956-959 ◽  
Author(s):  
M. Ahmad ◽  
J.I. Akhter ◽  
G. Ali ◽  
M. Akhter
Keyword(s):  
Electron Beam ◽  
Electron Beam Melting ◽  
In Situ Synthesis ◽  
Sic Fibers

In-situ synthesis of Ag nanoparticles by electron beam irradiation

2015 ◽  
Vol 110 ◽  
pp. 1-4 ◽  
Author(s):  
Jiangfeng Gong ◽  
Hongwei Liu ◽  
Yuwen Jiang ◽  
Shaoguang Yang ◽  
Xiaozhou Liao ◽  
...  
Keyword(s):  
Electron Beam ◽  
Ag Nanoparticles ◽  
Electron Beam Irradiation ◽  
In Situ Synthesis ◽  
Beam Irradiation

Nucleation and Early Growth of Sputtered thin Films

1970 ◽  
Vol 28 ◽  
pp. 516-517
Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Water Cooling ◽  
Stages Of Growth ◽  
Lens Assembly ◽  
Microscope Technique ◽  
Ion Beam Sputter Deposition

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.

A very rapid in situ Kikuchi technique to determine relative crystal misorientation

1988 ◽  
Vol 46 ◽  
pp. 830-831
Author(s):  
J. I. Bennetch
Keyword(s):  
Electron Beam ◽  
Analytical Techniques ◽  
Superplastic Forming ◽  
The Other ◽  
Kikuchi Pattern ◽  
Kikuchi Line ◽  
Line Analysis

In a recent study of the superplastic forming (SPF) behavior of certain Al-Li-X alloys, the relative misorientation between adjacent (sub)grains proved to be an important parameter. It is well established that the most accurate way to determine misorientation across boundaries is by Kikuchi line analysis. However, the SPF study required the characterization of a large number of (sub)grains in each sample to be statistically meaningful, a very time-consuming task even for comparatively rapid Kikuchi analytical techniques.In order to circumvent this problem, an alternate, even more rapid in-situ Kikuchi technique was devised, eliminating the need for the developing of negatives and any subsequent measurements on photographic plates. All that is required is a double tilt low backlash goniometer capable of tilting ± 45° in one axis and ± 30° in the other axis. The procedure is as follows. While viewing the microscope screen, one merely tilts the specimen until a standard recognizable reference Kikuchi pattern is centered, making sure, at the same time, that the focused electron beam remains on the (sub)grain in question.

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

In-Situ Dual Beam (FIBSEM) Techniques for Probe Pad Deposition and Dielectric Integrity Inspection in 0.2 μm Technology DRAM Single Cells

1999 ◽  
Author(s):  
Gunnar Zimmermann ◽  
Richard Chapman
Keyword(s):  
Electron Beam ◽  
Single Cell ◽  
Single Cells ◽  
Ion Beam ◽  
Gate Oxide ◽  
Ion Milling ◽  
Dual Beam ◽  
Sem Imaging ◽  
Innovative Techniques

Abstract Dual beam FIBSEM systems invite the use of innovative techniques to localize IC fails both electrically and physically. For electrical localization, we present a quick and reliable in-situ FIBSEM technique to deposit probe pads with very low parasitic leakage (Ipara < 4E-11A at 3V). The probe pads were Pt, deposited with ion beam assistance, on top of highly insulating SiOx, deposited with electron beam assistance. The buried plate (n-Band), p-well, wordline and bitline of a failing and a good 0.2 μm technology DRAM single cell were contacted. Both cells shared the same wordline for direct comparison of cell characteristics. Through this technique we electrically isolated the fail to a single cell by detecting leakage between the polysilicon wordline gate and the cell diffusion. For physical localization, we present a completely in-situ FIBSEM technique that combines ion milling, XeF2 staining and SEM imaging. With this technique, the electrically isolated fail was found to be a hole in the gate oxide at the bad cell.

Hydrothermal In Situ Synthesis ZnO Nanoarrays and Their Photocatalytic Applications

2013 ◽  
Vol 30 (6) ◽  
pp. 667
Author(s):  
Zhenzhen WANG ◽  
Fangfang LI ◽  
Han GUO ◽  
Jiuju FENG ◽  
Aijun WANG
Keyword(s):  
In Situ Synthesis ◽  
Photocatalytic Applications
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