scholarly journals Deposition of NiO[sub x] thin films with radio frequency magnetron sputtering and their characteristics as a source/drain electrode for the pentacene thin film transistor

2008 ◽  
Vol 26 (5) ◽  
pp. 1787 ◽  
Author(s):  
Dong-Jin Yun ◽  
Shi-Woo Rhee
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Thin Film Transistor ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
Drain Electrode

Effects of Sputtering Pressure on Cu3N Thin Films by Reactive Radio Frequency Magnetron Sputtering

2015 ◽  
Vol 1105 ◽  
pp. 74-77 ◽  
Author(s):  
Xiao Lin Ji ◽  
Hai Dong Ju ◽  
Tao Yu Zou ◽  
Jin Long Luo ◽  
Kun Quan Hong ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Band Gap ◽  
Optical Band Gap ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
Sputtering Pressure

Copper nitride thin films were prepared by reactive radio frequency magnetron sputtering at different sputtering pressures with fixed nitrogen to argon ratio. The influences of sputtering pressure on the structure, optical band gap, and surface morphology of films were investigated. The results show that the preferential orientation of polycrystalline Cu3N thin films changes from [111] to [100] when the sputtering pressure increases. Meanwhile, the optical band gap (Eg) of Cu3N thin films increases with the sputtering pressure. The surface morphology of Cu3N thin film deposited at high sputtering pressure becomes smoother than that of Cu3N thin film deposited at low sputtering pressure.

scholarly journals Influence of Annealing Temperature on the Characteristics of Ti-Codoped GZO Thin Solid Film

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Tao-Hsing Chen ◽  
Tzu-Yu Liao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering

This study utilizes radio frequency magnetron sputtering (RF sputtering) to deposit GZO transparent conductive film and Ti thin film on the same corning glass substrate and then treats GZO/Ti thin film with rapid thermal annealing. The annealing temperatures are 300°C , 500°C, and 550°C, respectively. Ti:GZO transparent conductive oxide (TCO) thin films are deposited on glass substrates using a radio frequency magnetron sputtering technique. The thin films are then annealed at temperatures of 300°C, 500°C, and 550°C, respectively, for rapid thermal annealing. The effects of the annealing temperature on the optical properties, resistivity, and nanomechanical properties of the Ti:GZO thin films are then systematically explored. The results show that all of the annealed films have excellent transparency (~90%) in the visible light range. Moreover, the resistivity of the Ti:GZO films reduces with an increasing annealing temperature, while the carrier concentration and Hall mobility both increase. Finally, the hardness and Young’s modulus of the Ti:GZO thin films are both found to increase as the annealing temperature is increased.

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