Study of tungsten oxidation in O2∕H2∕N2 downstream plasma

2008 ◽  
Vol 26 (3) ◽  
pp. 360-364 ◽  
Author(s):  
Songlin Xu ◽  
Li Diao
Keyword(s):  
2017 ◽  
Vol 179 ◽  
pp. 56-59 ◽  
Author(s):  
Z. Chen ◽  
A. Belmonte ◽  
C.Y. Chen ◽  
J. Radhakrishnan ◽  
A. Redolfi ◽  
...  
Keyword(s):  

1982 ◽  
Vol 59 (8) ◽  
pp. 693
Author(s):  
Miles Pickering ◽  
David L. Monts

2001 ◽  
Vol 384 (2) ◽  
pp. 298-306 ◽  
Author(s):  
G. Leftheriotis ◽  
S. Papaefthimiou ◽  
P. Yianoulis ◽  
A. Siokou

2010 ◽  
Vol 431 (2) ◽  
pp. 113-115 ◽  
Author(s):  
D. V. Kostomarov ◽  
Kh. S. Bagdasarov ◽  
E. V. Antonov

2012 ◽  
Vol 187 ◽  
pp. 227-230 ◽  
Author(s):  
Francesco Pipia ◽  
Annamaria Votta ◽  
Enrica Ravizza ◽  
Simona Spadoni ◽  
S. Grasso ◽  
...  

Tungsten importance in semiconductor manufacturing is renewed more and more due to its usage not only as metallization for plugs, but also in metal gates architectures. As the scaling down of the devices is becoming aggressive, the metal interfaces become more critical. Hence, a deeper understanding of the evolution of the W surface after wet cleaning processes is becoming increasingly more important.


1977 ◽  
Vol 108 (2) ◽  
pp. 247-258 ◽  
Author(s):  
D. Cocke ◽  
G. Abend ◽  
J. H. Block

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