scholarly journals Field emission from as grown and nitrogen incorporated tetrahedral amorphous carbon/silicon heterojunctions grown using a pulsed filtered cathodic vacuum arc technique

2008 ◽  
Vol 26 (2) ◽  
pp. 566 ◽  
Author(s):  
O. S. Panwar ◽  
Nalin Rupesinghe ◽  
G. A. J. Amaratunga
Keyword(s):  
Field Emission ◽  
Amorphous Carbon ◽  
Vacuum Arc ◽  
Tetrahedral Amorphous Carbon ◽  
Silicon Heterojunctions ◽  
Filtered Cathodic Vacuum Arc

FCVA-Synthesized Tetrahedral Amorphous Carbon Films for Biomedical Applications

2007 ◽  
Vol 336-338 ◽  
pp. 1577-1580 ◽  
Author(s):  
Chuan Lin Zheng ◽  
Wu Bao Yang ◽  
X. Chang
Keyword(s):  
Amorphous Carbon ◽  
Biomedical Applications ◽  
Pure Titanium ◽  
Carbon Films ◽  
Vacuum Arc ◽  
Negative Bias Voltage ◽  
Tetrahedral Amorphous Carbon ◽  
In Vitro Measurements ◽  
Filtered Cathodic Vacuum Arc

Tetrahedral amorphous carbon (ta-C) films were deposited onto Si(100) wafers by using filtered cathodic vacuum arc technique (FCVA). The influence of the negative bias voltage applied to substrates on film structures was studied by Raman spectroscopy, X-ray photoemission spectroscopy (XPS). The ta-C films showed maximal sp3 fractions 87%, the hardness and elastic modulus of the ta-C film is 72 and 480 GPa, respectively. In vitro measurements of contact angle and platelet adhesion were applied to evaluate the biocompatibility of the ta-C films in comparison with that of NiTi, 316L and pure titanium. The results show that the ta-C films have hydrophobicity and exhibit better hemocompatibility which are very suitable for biomedical applications.

Field Emission from Tetrahedrally Bonded Amorphous Carbon

1997 ◽  
Vol 471 ◽  
Author(s):  
W. I. Milne ◽  
J. Robertson ◽  
B. S. Satyanarayanan ◽  
A. Hart
Keyword(s):  
Field Emission ◽  
Amorphous Carbon ◽  
Applied Field ◽  
Vacuum Arc ◽  
Threshold Field ◽  
Nitrogen Doped ◽  
Bonding Ratio ◽  
Current Densities ◽  
Filtered Cathodic Vacuum Arc ◽  
Tetrahedrally Bonded

ABSTRACTA series of tetrahedrally bonded carbon (ta-C) films have been produced using a Filtered Cathodic Vacuum Arc System. The threshold field and current densities achievable have been investigated as a function of sp3/sp2 bonding ratio and nitrogen content. Typical undoped ta-C films have a threshold field of 15–20V/μm and optimally nitrogen doped films exhibit threshold fields as low as ∼ 5 V/μm. Current densities of typically 10-4 A/cm2 at an applied field of 20V/micron were also obtained.

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