Proximity effects in nanoscale patterning with high resolution electron beam induced deposition

2008 ◽  
Vol 26 (1) ◽  
pp. 249 ◽  
Author(s):  
Peter A. Crozier
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Proximity Effects ◽  
Nanoscale Patterning ◽  
Resolution Electron ◽  
Electron Beam Induced Deposition

High Resolution Electron Beam Fabrication Using STEM

1978 ◽  
Vol 36 (3) ◽  
pp. 343-354 ◽  
Author(s):  
A.N. Broers ◽  
J. Cuomo ◽  
J. Harper ◽  
W. Molzen ◽  
R. Laibowitz ◽  
...  
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Integrated Circuits ◽  
Electrical Contact ◽  
Physical Nature ◽  
Proximity Effects ◽  
X Rays ◽  
Josephson Effects ◽  
Optical Elements ◽  
Resolution Electron

Recent work on electron beam lithography has centered on improving overlay precision, reducing cost per exposure and perfecting electron resists and processes for the fabrication of silicon integrated circuits. These efforts have produced experimental integrated circuits with higher density than had previously been possible, and have led to cost reductions in manufacturing environments where quick turn-around is essential. High resolution (linewidths < 0.25 /jm) has not been of direct interest although its pursuit has given information about electron scattering effects which influence resist profiles and give rise to proximity effects. Both of these effects can still be important at larger dimensions particularly when linewidth control is of primary importance. In the last two years, new interest in high resolution has arisen because it has become possible to make useful structures with dimensions of a few tens of nanometers. These nanostructures can be handled readily and it is possible to make electrical contact to them. They are of interest in exploring the physical nature of electrical conductivity especially in superconducting structures exhibiting Josephson effects. It should also be possible to use similar techniques to make optical elements for soft x-rays such as zone plates and pinholes.

Quantitative high-resolution electron microscopy (HREM) of defects in ordered polymers

1996 ◽  
Vol 54 ◽  
pp. 166-167
Author(s):  
Patricia M. Wilson ◽  
David C. Martin
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
High Resolution ◽  
Liquid Crystalline ◽  
High Resolution Electron Microscopy ◽  
Polymer Materials ◽  
Scattered Electron ◽  
Crystalline Polymers ◽  
Resolution Electron ◽  
Beam Damage

Efforts in our laboratory and elsewhere have established the utility of low dose high resolution electron microscopy (HREM) for imaging the microstructure of crystalline and liquid crystalline polymers. In a number of polymer systems, direct imaging of the lattice spacings by HREM has provided information about the size, shape, and relative orientation of ordered domains in these materials. However, because of the extent of disorder typical in many polymer microstructures, and because of the sensitivity of most polymer materials to electron beam damage, there have been few studies where the contrast observed in HREM images has been analyzed in a quantitative fashion.Here, we discuss two instances where quantitative information about HREM images has been used to provide new insight about the organization of crystalline polymers in the solid-state. In the first, we study the distortion of the polymer lattice planes near the core of an edge dislocation and compare these results to theories of dislocations in anisotropic and liquid crystalline solids. In the second, we investigate the variations in HREM contrast near the edge of wedge-shaped samples. The polymer used in this study was the diacetylene DCHD, which is stable to electron beam damage (Jc = 20 C/cm2) and highly crystalline. The instrument used in this work was a JEOL 4000 EX HRTEM with a beam blanidng device. More recently, the 4000 EX has been installed with instrumentation for dynamically recording scattered electron beam currents.

Evaluation of poly(p-trimethylsilylstyrene and p-pentamethyldisilylstyrene sulfone)s as high-resolution electron-beam resists

1991 ◽  
Author(s):  
Antoni S. Gozdz ◽  
Hiroshi Ono ◽  
Seiki Ito ◽  
John A. Shelburne III ◽  
Minoru Matsuda
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Resolution Electron

High resolution electron beam lithography on CaF2

1984 ◽  
Vol 44 (4) ◽  
pp. 468-469 ◽  
Author(s):  
P. M. Mankiewich ◽  
H. G. Craighead ◽  
T. R. Harrison ◽  
A. H. Dayem
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Electron Beam Lithography ◽  
Resolution Electron
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