Effect of process parameters on via formation in Si using deep reactive ion etching

Author(s):  
I. U. Abhulimen ◽  
S. Polamreddy ◽  
S. Burkett ◽  
L. Cai ◽  
L. Schaper
2010 ◽  
Vol 48 (11) ◽  
pp. 1028-1034 ◽  
Author(s):  
Kwang-Seok Kim ◽  
Young-Chul Lee ◽  
Jee-Hyuk Ahn ◽  
Jun Yeob Song ◽  
Choong D. Yoo ◽  
...  

2011 ◽  
Vol 21 (10) ◽  
pp. 105001
Author(s):  
Ahmet Erten ◽  
Milan Makale ◽  
Xuekun Lu ◽  
Bernd Fruhberger ◽  
Santosh Kesari ◽  
...  

2017 ◽  
Vol 9 (27) ◽  
pp. 23263-23263
Author(s):  
Bryan W. K. Woo ◽  
Shannon C. Gott ◽  
Ryan A. Peck ◽  
Dong Yan ◽  
Mathias W. Rommelfanger ◽  
...  

2014 ◽  
Vol 113 ◽  
pp. 35-39 ◽  
Author(s):  
Jayalakshmi Parasuraman ◽  
Anand Summanwar ◽  
Frédéric Marty ◽  
Philippe Basset ◽  
Dan E. Angelescu ◽  
...  

2006 ◽  
Vol 16 (12) ◽  
pp. 2570-2575 ◽  
Author(s):  
Yiyong Tan ◽  
Rongchun Zhou ◽  
Haixia Zhang ◽  
Guizhang Lu ◽  
Zhihong Li

Sign in / Sign up

Export Citation Format

Share Document