1.3 μm Ga[sub 0.11]In[sub 0.89]As[sub 0.24]P[sub 0.76]∕Ga[sub 0.27]In[sub 0.73]As[sub 0.67]P[sub 0.33] compressive-strain multiple quantum well with n-type modulation-doped GaInP intermediate-barrier laser diodes
2007 ◽
Vol 25
(4)
◽
pp. 1382
Keyword(s):
2004 ◽
Vol 22
(3)
◽
pp. 961
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2006 ◽
Vol 35
(2)
◽
pp. 243-249
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Keyword(s):
Keyword(s):
Keyword(s):
2019 ◽
Vol 91
◽
pp. 327-332
Keyword(s):
1998 ◽
Vol 37
(Part 1, No. 6A)
◽
pp. 3309-3312
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1994 ◽
Vol 6
(3)
◽
pp. 338-340
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1990 ◽
Vol 2
(7)
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pp. 456-458
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