1.3 μm Ga[sub 0.11]In[sub 0.89]As[sub 0.24]P[sub 0.76]∕Ga[sub 0.27]In[sub 0.73]As[sub 0.67]P[sub 0.33] compressive-strain multiple quantum well with n-type modulation-doped GaInP intermediate-barrier laser diodes

Author(s):  
Po-Hsun Lei
2004 ◽  
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pp. 1651-1654
Author(s):  
Ming-Yuan Wu ◽  
Chia-Lung Tsai ◽  
Meng-Chyi Wu ◽  
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...  

2006 ◽  
Vol 35 (2) ◽  
pp. 243-249 ◽  
Author(s):  
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1988 ◽  
Vol 24 (23) ◽  
pp. 1408 ◽  
Author(s):  
T. Sasaki ◽  
S. Takano ◽  
N. Henmi ◽  
H. Yamada ◽  
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pp. 1045 ◽  
Author(s):  
M. Kitamura ◽  
S. Takano ◽  
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1990 ◽  
Vol 2 (7) ◽  
pp. 456-458 ◽  
Author(s):  
Y.H. Wang ◽  
K. Tai ◽  
J.D. Wynn ◽  
M. Hong ◽  
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...  

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