Improved understanding of an electron beam charge compensation method for magnetic sector secondary ion mass spectrometer analysis of insulators

2007 ◽  
Vol 25 (4) ◽  
pp. 769-774 ◽  
Author(s):  
Z. Zhu ◽  
C. Gu ◽  
F. A. Stevie ◽  
D. P. Griffis
Keyword(s):  
Electron Beam ◽  
Mass Spectrometer ◽  
Charge Compensation ◽  
Compensation Method ◽  
Magnetic Sector ◽  
Secondary Ion

scholarly journals Effect of electron beam injection on boron redistribution in silicon and oxide layer

2017 ◽  
Vol 35 (1) ◽  
pp. 14-17
Author(s):  
Shiqiang Qin ◽  
Yi Tan ◽  
Jiayan Li ◽  
Dachuan Jiang ◽  
Shutao Wen ◽  
...  
Keyword(s):  
Electron Beam ◽  
Oxide Layer ◽  
Transition Region ◽  
Mass Spectrometer ◽  
Silicon Wafers ◽  
Beam Injection ◽  
Secondary Ion ◽  
Potential Use

AbstractThe behavior of boron redistribution in silicon with and without oxide layer after electron beam injection (EBI) was investigated. Special defect shapes were generated on the surface of bare and oxidized silicon wafers. Secondary ion mass spectrometer was used to measure the boron profile. The results showed that after long EBI time, boron tended to be induced from both sides of the transition region between the oxide layer and silicon. For the sample without oxide layer after EBI, boron tended to diffuse towards the surface and its concentration obviously reduced inside the silicon. The results of the study show the potential use of the process in removing boron impurity in silicon.

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